Analysis on the interfacial properties of transparent conducting oxide and hydrogenated p-type amorphous silicon carbide layers in p-i-n amorphous silicon thin film solar cell structure

Quantitative estimation of the specific contact resistivity and energy barrier at the interface between transparent conducting oxide (TCO) and hydrogenated p-type amorphous silicon carbide (a-Si_1 − xC_x:H(p)) was carried out by inserting an interfacial buffer layer of hydrogenated p-type microcrystalline silicon (μc-Si:H(p)) or hydrogenated p-type amorphous silicon (a-Si:H(p)). In addition, superstrate configuration p-i-n hydrogenated amorphous silicon (a-Si:H) solar cells were fabricated by plasma enhanced chemical vapor deposition to investigate the effect of the inserted buffer layer on the solar cell device. Ultraviolet photoelectron spectroscopy was employed to measure the work functions of the TCO and a-Si_1 − xC_x:H(p) layers and to allow direct calculations of the energy barriers at the interfaces. Especially interface structures were compared with/without a buffer which is either highly doped μc-Si:H(p) layer or low doped a-Si:H(p) layer, to improve the contact properties of aluminum-doped zinc oxide and a-Si_1 − xC_x:H(p). Out of the two buffers, the superior contact properties of μc-Si:H(p) buffer could be expected due to its higher conductivity and slightly lower specific contact resistivity. However, the overall solar cell conversion efficiencies were almost the same for both of the buffered structures and the resultant similar efficiencies were attributed to the difference between the fill factors of the solar cells. The effects of the energy barrier heights of the two buffered structures and their influence on solar cell device performances were intensively investigated and discussed with comparisons.     

溶胶—凝胶法制备纳米级SnO2

本文以无机试剂为原料，采用溶胶—凝胶法制备了纳米级SnO2.以TG－DTA热分析、红外光谱及XRD、TEM等测试手段对纳米级SnO2的晶粒生长过程进行了研究．结果表明，当热处理温度＜500℃时，晶粒生长缓慢，在600℃热处理2h，能得到晶粒尺寸在十几纳米的SnO2颗粒．而600℃以上的热处理，有可能使晶粒迅速粗大．应用相变理论计算得温度＜500℃热处理2h时，晶粒生长活化能为7．02kJ·mol-1，＞500℃时，晶粒生长活化能为26．55kJ·mol-1.     

Fabrication and Properties of DC Magnetron Sputtered Indium Tin Oxide on Flexible Plastic Substrate

Indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates at low temperature by DC magnetron sputtering from an In-Sn (90-10 wt pct) alloy target were studied. The correla-tion between deposition conditions and ITO property was systematically investigated and characterized. These as-deposited ITO films were used as the anode contact for flexible organic light-emitting diodes (FOLEDs). The fabricated FOLEDs with a structure of PET/ITO/NPB (50 nm)/Alq (20 nm)/Mg:Ag (100 nm) showed a maximum luminance of 2125 cd/m2 at 13 V.     

锂离子电池C-Sn-金属复合负极材料的研究进展

综述了锂离子电池碳材料与锡基合金复合材料的发展现状,总结了C-Sn二元复合材料的主要种类,并分析了它们作为负极材料的电化学性能特点;同时阐述了C-Sn-金属三元复合材料的发展,这种复合材料结合了碳材料的循环稳定性和合金材料的高比容量的优势,是具有发展前景的新型锂离子电池负极材料。     

基于氧化石墨烯/聚吡咯-铟锡氧化物微电极的细胞阻抗生物传感器构建及细胞粘附增殖行为检测

构建一种基于氧化石墨烯/聚吡咯-铟锡氧化物GO/PPy-ITO（Graphene Oxide/Polypyrrole-Indium Tin Oxide）微电极的细胞阻抗生物传感器并用于细胞粘附增殖行为学检测。ITO微电极采用光刻技术对感光干膜绝缘层蚀刻而成,通过一步法电聚合技术在ITO微电极表面沉积GO/PPy纳米复合膜制备GO/PPy-ITO微电极;形状测量激光显微镜和扫描电子显微镜分别对GO/PPy表面粗糙度和拓扑形貌进行表征;电化学循环伏安法及阻抗谱表征GO/PPy-ITO微电极的电化学性质;人肺癌细胞株A549粘附、铺展和增殖实验考察GO/PPy界面的生物相容性;以GO/PPy-ITO微电极作为传感电极,利用电化学阻抗谱技术对A549细胞的粘附增殖行为进行检测。结果显示,ITO微电极表面上电沉积的GO/PPy纳米复合物表面平整,分布大量的微孔结构;电化————————————学实验结果显示GO/PPy-ITO微电极比裸ITO微电极具有更低的阻抗特征和更高的电化学活性;GO/PPy比纯PPy膜更能促进A549细胞粘附、铺展和增殖;GO/PPy-ITO微电极表面A549细胞的粘附增殖行为改变电极系统的阻抗谱特征,通过对阻抗谱数据进行等效电路拟合分析获得细胞粘附增殖行为学信息。本文发展的GO/PPy-ITO微电极兼具优良的电化学性质和细胞生物相容性,基于该电极系统构建的细胞阻抗生物传感器可用于细胞病理生理学行为、药物筛选等研究领域。     

二丁基氧化锡合成方法的工艺改进

用复合溶剂代替乙醚作溶剂,通过格氏反应由四氯化锡制得粗四丁基锡(简称TBT),四丁基锡含量≥85%,三丁基氯化锡含量≤15%,将粗TBT与四氯化锡在催化剂的作用下反应,反应完毕后,将反应物用酸洗,分相制得粗二丁基氯化锡,再减压脱水制得精二丁基氯化锡,二丁基氯化锡和氢氧化钠反应制得二丁基氧化锡,以SnCl4为原料合成二丁基氧化锡的小试收率以含锡量计为95.26%.     

二氧化锡薄膜气敏传感器对常见室内污染气体的 电阻2温度特性及机理分析

采用无机试剂(SnCl2·2H2O)为原料,用溶胶-凝胶提拉法制备了二氧化锡薄膜及相应的气敏传感器,并研究了二氧化锡薄膜气敏传感器在常见室内污染气体气氛中的电阻-温度变化关系.结果发现不同气氛下电阻-温度特性各不相同,由此可以获得被测气体的相关信息.本文还用分子轨道计算软件对四种室内污染气体的分子轨道进行了计算,并根据分子轨道能级的相对位置定性解释了二氧化锡薄膜气敏传感器在不同气氛中的电阻-温度曲线.通过对甲醛、苯、甲苯、二甲苯四种气体电阻-温度曲线的测试可以确定被测气体的种类.     

常温一氧化碳气敏元件制备及气敏机理研究

介绍了以SnO2 为主 ,掺入Al2 O3 ,MgO ,InO ,Pd等添加剂的常温CO气敏元件的制备方法。根据其晶体结构特点对气敏机理进行了探讨。论述了传感器的信息传感机制 ,即晶界势垒控制和晶粒大小控制机制同时存在。为获得性能良好的气敏元件 ,需要最佳的制备方法和最好的添加剂