Scattering of phonons by vacancies

The scattering of phonons by vacancies is estimated by a perturbation technique in terms of the missing mass and the missing linkages. An argument is given why distortion effects can be disregarded. The resonance frequency of the defect is sufficiently high so that resonance effects can be disregarded for phonons in the important frequency range for thermal conduction. The theory is applied to the thermal resistance by vacancies in cases where the vacancy concentration is known: potassium chloride with divalent cations, nonstoichiometric zirconium carbide, and tin telluride.     

从零维到一维递变氧化锡纳米材料的可控制备

为了研究纳米半导体材料的量子限域效应与形貌和结构的关系,本文以SnCl4.5H2O和不同的有机酸以及不同的胺类有机物为反应物,通过溶剂热法制备了不同形貌的氧化锡纳米材料。在其它实验条件相同的前提下,通过配制不同的反应物体系,通过在同一反应体系中经过不同的溶剂热反应时间,均成功获得了从零维到一维递变的不同长径比的氧化锡纳米材料,包括纳米点、纳米棒、纳米线等。本文还尝试了在同一反应体系中使用不同的表面活性剂的方法,虽然没有获得从零维到一维递变的产物,但产物仍然具有不同形貌。     

反应合成银氧化锡电接触材料抗熔蚀性研究

采用反应合成技术和传统粉末冶金技术制备银氧化锡(AgSnO2)电接触材料，利用千瓦级CO2激光器模仿电弧作用在试样表面产生局部熔化。对AgSnO2块体材料进行抗熔蚀性测试，对块体材料及冷拉拔的AgSnO2线材进行显微组织分析(扫描电镜、透射电镜)。研究结果表明，采用反应合成技术可以在银基体中合成尺寸细小、界面新鲜的SnO2颗粒，制备AgSnO2电接触材料；用反应合成法制备的AgSnO2材料中，微米级的SnO2颗粒系由纳米级的SnO2颗粒聚集而成；用反应合成法制备的AgSnO2电接触材料由于改变了银和SnO2的结合状态使材料的抗熔蚀性得到改善和提高。     

低温烧结纳米掺杂Ag-SnO_2电接触合金放电性能研究

利用化学共沉淀、高能球磨技术及热压烧结等方法制备出Fe掺杂纳米复合Ag-SnO2电接触合金,测定了纳米复合电接触合金密度、硬度、电阻率、耐电压强度、耐烧蚀性等基本物理性能,运用扫描电镜(SEM)对电性能测试前后组织进行观察分析。结果发现,Fe元素的加入,细化了纳米SnO2;Fe掺杂含量越多,纳米氧化物粒度越小,纳米复合电接触合金组织也越细小均匀,纳米复合电接触材料硬度、电阻率、平均耐电压强度和电弧寿命上升,截流值降低;且Fe掺杂对纳米复合电接触合金电弧烧蚀速率有明显影响。     

Analysis on the interfacial properties of transparent conducting oxide and hydrogenated p-type amorphous silicon carbide layers in p-i-n amorphous silicon thin film solar cell structure

Quantitative estimation of the specific contact resistivity and energy barrier at the interface between transparent conducting oxide (TCO) and hydrogenated p-type amorphous silicon carbide (a-Si_1 − xC_x:H(p)) was carried out by inserting an interfacial buffer layer of hydrogenated p-type microcrystalline silicon (μc-Si:H(p)) or hydrogenated p-type amorphous silicon (a-Si:H(p)). In addition, superstrate configuration p-i-n hydrogenated amorphous silicon (a-Si:H) solar cells were fabricated by plasma enhanced chemical vapor deposition to investigate the effect of the inserted buffer layer on the solar cell device. Ultraviolet photoelectron spectroscopy was employed to measure the work functions of the TCO and a-Si_1 − xC_x:H(p) layers and to allow direct calculations of the energy barriers at the interfaces. Especially interface structures were compared with/without a buffer which is either highly doped μc-Si:H(p) layer or low doped a-Si:H(p) layer, to improve the contact properties of aluminum-doped zinc oxide and a-Si_1 − xC_x:H(p). Out of the two buffers, the superior contact properties of μc-Si:H(p) buffer could be expected due to its higher conductivity and slightly lower specific contact resistivity. However, the overall solar cell conversion efficiencies were almost the same for both of the buffered structures and the resultant similar efficiencies were attributed to the difference between the fill factors of the solar cells. The effects of the energy barrier heights of the two buffered structures and their influence on solar cell device performances were intensively investigated and discussed with comparisons.     

溶胶—凝胶法制备纳米级SnO2

本文以无机试剂为原料，采用溶胶—凝胶法制备了纳米级SnO2.以TG－DTA热分析、红外光谱及XRD、TEM等测试手段对纳米级SnO2的晶粒生长过程进行了研究．结果表明，当热处理温度＜500℃时，晶粒生长缓慢，在600℃热处理2h，能得到晶粒尺寸在十几纳米的SnO2颗粒．而600℃以上的热处理，有可能使晶粒迅速粗大．应用相变理论计算得温度＜500℃热处理2h时，晶粒生长活化能为7．02kJ·mol-1，＞500℃时，晶粒生长活化能为26．55kJ·mol-1.     

Ultrathin Layered SnSe Nanoplates for Low Voltage,High‐Rate,and Long‐Life Alkali–Ion Batteries

2D electrode materials with layered structures have shown huge potential in the fields of lithium‐ and sodium‐ion batteries. However, their poor conductivity limits the rate performance and cycle stability of batteries. Herein a new colloid chemistry strategy is reported for making 2D ultrathin layered SnSe nanoplates (SnSe NPs) for achieving more efficient alkali‐ion batteries. Due to the effect of weak Van der Waals forces, each semiconductive SnSe nanoplate stacks on top of each other, which can facilitate the ion transfer and accommodate volume expansion during the charge and discharge process. This unique structure as well as the narrow‐bandgap semiconductor property of SnSe simultaneously meets the requirements of achieving fast ionic and electronic conductivities for alkali‐ion batteries. They exhibit high capacity of 463.6 mAh g⁻¹ at 0.05 A g⁻¹ for Na‐ion batteries and 787.9 mAh g⁻¹ at 0.2 A g⁻¹ for Li‐ion batteries over 300 cycles, and also high stability for alkali‐ion batteries.     

Fabrication and Properties of DC Magnetron Sputtered Indium Tin Oxide on Flexible Plastic Substrate

Indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates at low temperature by DC magnetron sputtering from an In-Sn (90-10 wt pct) alloy target were studied. The correla-tion between deposition conditions and ITO property was systematically investigated and characterized. These as-deposited ITO films were used as the anode contact for flexible organic light-emitting diodes (FOLEDs). The fabricated FOLEDs with a structure of PET/ITO/NPB (50 nm)/Alq (20 nm)/Mg:Ag (100 nm) showed a maximum luminance of 2125 cd/m2 at 13 V.     

锂离子电池C-Sn-金属复合负极材料的研究进展

综述了锂离子电池碳材料与锡基合金复合材料的发展现状,总结了C-Sn二元复合材料的主要种类,并分析了它们作为负极材料的电化学性能特点;同时阐述了C-Sn-金属三元复合材料的发展,这种复合材料结合了碳材料的循环稳定性和合金材料的高比容量的优势,是具有发展前景的新型锂离子电池负极材料。