等离子体增强化学气相沉积技术制备锗反蛋白石三维光子晶体

采用溶剂蒸发对流自组装法将单分散二氧化硅(SiO2)微球组装形成三维有序胶体晶体模板,以锗烷(GeH4)为先驱体气用等离子增强化学气相沉积法在350℃填充高折射率材料锗.获得了锗反蛋白石光子晶体.通过扫描电镜、X射线衍射仪对锗反蛋白石的形貌、成分、结构进行了表征.结果表明:锗在SiO2微球空隙内填充均匀,得到的锗为多晶态.锗反蛋白石光子晶体为三维有序多孔结构.等离子体增强化学气相沉积的潜在优势在于可实现材料的低温填充,从而以高分子材料为模板进行复型,得到多种结构的三维光子晶体.     

含锗真空炉渣在HCl-CaCl2-H2O体系中浸出锗的动力学研究

为提高真空炉渣中锗的浸出率提供理论依据,对含锗真空炉渣在HCl-CaCl2-H2O体系中锗的浸出动力学进行了研究。结果表明,浸出过程属于生成固体产物层的"未反应核收缩模型",其宏观动力学方程为:1–2/3x–(1–x)2/3=4.66×10-3CHCl1.027CCaCl21.046d-0.862exp(–21068/RT)t,表观活化能为21.068kJ/mol,浸出过程受灰分层扩散控制;提高盐酸的浓度、氯化钙浓度、浸出温度、液固比及减小矿物粒度均可加快锗的浸出速度,提高锗的浸出率。     

离子注入对单晶锗力学性能影响的分子动力学研究

为改善单晶锗的硬脆力学特征,用分子动力学模拟方法研究了3种不同剂量的离子注入对单晶锗表面的改性机理。分析结果表明,离子注入对锗基体造成了非晶相损伤,纳米压痕过程表现为晶格演化。纳米压痕结果揭示了非晶相的存在能够降低单晶锗的硬度和脆性,提高塑性。此外,锗基体的非晶相损伤程度和硬度与离子剂量有关。随着剂量的增加,非晶损伤程度加深,硬度降低。     

Thermal Evolution of Solid Products Derived from Germanium-Containing Preceramic Polymer

The products formed during thermolysis of poly(germasilethyne) have been studied within temperature range 20–1600°C by means of Raman spectroscopy, XRD and EDS analysis, and SEM analysis. The evolution of solid products derived from poly(germasilethyne) as a function of heat-treatment temperature passes through several stages. At earlier stages the cross-linking of polymer molecules and the formation of rigid three-dimensional network occur. The particularity of the first stage of thermal transformation of poly(germasilethyne) in comparison with silicon analogue is not only the formation of the skeleton in the solid phase but also the release of disordered carbon phase. The stage of intensive thermal decomposition of germanium-containing polymer includes the escape of gaseous products, the formation of strongly disordered carbon, amorphous covalent silicon–germanium-carbon network and germanium as inorganic phase (most likely Si_1–x–yGe_xC_y). High-temperature treatment results in the evaporation of germanium, the formation and ordering of carbon and -SiC phases. The presence of germanium in the products of thermolysis of polymer leads to a faster growth of the oxides during exposition of thermolyzed polymer to air at high temperatures.     

射频功率对反应溅射淀积的a－Ge：H薄膜特性的影响

本文通过红外透射谱（ＩＲ）、拉曼散射谱（Ｒａｍａｎ）、电子自族共振谱（ＥＳＲ）、光吸收谱、电导率和淀积速率的测量，比较全面地研究了射频功率对反应溅射法淀积的ａ－Ｇｅ：Ｈ薄膜特性的影响．发现ａ－Ｇｅ：Ｈ膜的淀积速率、氢量、膜结构、光电性能随功率发生规律性的变化．对实验结果作了初步讨论．     

Relaxation of extrinsic and intrinsic stresses in germanium substrates with silicon films

Si films were deposited on Ge substrates at 400°C by two different Physical Vapor Deposition techniques: (A) ion beam sputtering and (B) magnetron sputtering. The intrinsic stresses in the as-deposited films were measured to be compressive and much greater in samples (A), about −1500 to −2000 MPa than in samples (B), about −300 to −500 MPa. The substrates were subsequently exposed to thermal treatments for varying times at 800°C. In the lower stressed (B) samples, the films had relaxed and reduced the overall curvature of the structure whereas in the high stresses (A) samples, an irreversible large increase in the substrate curvature was found to occur. This indicated that plastic deformation in the Ge substrates itself had occurred.     

Synthesis and Characterization of Poly(carbonates) Derived from Diphenols That Contain Silicon or Germanium

Poly(carbonates) derived from diphenols that contain Si or Ge and bisphenol A bis(chloroformate) have been synthesized using phase-transfer conditions. The products were characterized by spectroscopic methods. Two phase-transfer catalysts and three molar ratios of NaOH/diphenol were used. The results were evaluated by the yields of product and their inherent viscosities. The data were compared with materials obtained without the catalyst and showed that the new synthetic technique was effective for the synthesis of these types of poly(carbonates). An increase in the concentration of NaOH and the phase-transfer catalysts increased the yields and _inh values compared to those obtained with stoichiometric quantities of NaOH. It is proposed that the differences in electronegativities of the heteroatoms in the diphenols are responsible for this behaviour.     

Temperature Dependence of the Velocity of Sound in Liquid Metals of Group XIV

The temperature dependences of the velocity of sound in liquid Pb, Sn, Ge, and Si have been measured by means of the pulse transmission technique over temperature ranges of 610–1078 K, 608–1463 K, 1215–1443 K, and 1723–1888 K, respectively. In both liquid Pb and Sn, the velocities of sound decrease linearly with increasing temperature, which is the same temperature dependence as shown in many other liquid metals. On the other hand, the velocities of sound in liquid Ge and Si exhibit anomalous temperature dependences. In Ge, the velocity of sound has a distinct maximum around 1280 K and decreases linearly at higher temperatures. In Si, the velocity of sound increases monotonically with increasing temperature in the temperature range investigated. It is considered that these results predict that the coordination numbers of liquid Ge and Si increase with increasing temperature.     

P_(204)与C_(5-7)羟肟酸液膜体系自湿法冶锌系统中同步迁移分别回收镓和锗(Ⅱ

提出了乳状液膜体系自湿法冶锌系统中经一级同时分离镓和锗的新方法,建立了用 Ｐ２０４和 Ｃ５ － ７ 羟肟酸协同载体,ｐ Ｈ＝ ３ ．２ 的 Ｎ Ｈ４ Ｆ 溶液为内水相试剂,使 Ｇｅ４ ＋ 以溶液状态而 Ｇａ３ ＋ 则以 Ｇａ（ Ｏ Ｈ）３ 沉淀同步迁移进入内水相并分别回收的液膜体系,研究了影响 Ｇａ３ ＋ 、 Ｇｅ４ ＋ 迁移的各种因素,经正交实验确定了分离镓和锗的最佳液膜组成及操作条件,并用加入铁粉法除去了杂质 Ｆｅ３ ＋和 Ｃｕ２ ＋ 对 Ｇａ３ ＋ 、 Ｇｅ４ ＋ 迁移的干扰．所得镓和锗的回收率分别为９４ ．７ ％ 和９８ ．６ ％ ,纯度为９７ ．８ ％ 和９６ ．３ ％ ． Ｚｎ２ ＋ 离子损失仅２ ．１５ ％ ,回收镓和锗后的萃余液可返回冶锌系统．