一种用于模数转换器的高性能差分参考电压源

介绍了一种可直接应用于模数转换器的低功耗、高性能差分参考电压源.它采用新型结构的带隙基准源产生高精度温度补偿的参考电流,参考电流通过跨导缓冲器直接转换成所需的差分参考电压.该差分电压精度高、温漂小、抗干扰能力强.电路选用TSMC 0.18μm CMOS工艺实现,芯片面积为250μm×350μm.经测量,电路功耗为0.9mW,输出差分参考电压的平均温度系数为9.5×10-6K-1.     

光子晶体光纤的现状和发展

光子晶体光纤(PCFs)具有很多在传统光纤中无法实现的特性,成为近些年光学和光电子学的研究热点.对光子晶体光纤十几年的发展历史进行了简要的回顾,介绍了光子晶体光纤领域中的一些基本概念,光子晶体光纤的分类及光子晶体光纤的制备工艺.重点论述了光子晶体光纤的无限截止单模传输特性,可调节的色散特性,大模面积特性,高双折射特性和高非线性特性及其在非线性光学和光子晶体光纤激光器等方面的应用,并对发展前景进行了展望.     

宽温范围高温度稳定性曲率互补电压基准设计

针对当前射频系统中电源管理芯片在宽温度范围下对带隙基准稳定性的较高要求,提出了一种新型互补带隙基准电路结构,通过将带隙基准与MOS弱反型区基准的温度系数曲率互补叠加,实现了极宽温度范围内带隙电压基准的高温度稳定性输出.采用0.35 μm CMOS工艺对所设计的电路进行了流片验证,测试结果表明,基准电压源工作电压为5V时,输出基准电压1.28 V,在-55 ～125℃温度范围内,温度系数可达4.5×10-6/℃,频率1 kHz时,电源抑制比(PSRR)可达-60 dB,100 kHz时,PSRR可达-55 dB,电压基准源芯片面积为0.22 mm×0.15 mm.     

一种无运放电流模式带隙基准设计

为满足集成电路中低功耗／低温度系数的要求,基于负反馈钳位原理,采用分段线性补偿技术,通过在高低温度段分别插入非线性电流修正项对基准进行了曲率补偿,得到一种新型的无需运放的曲率补偿电流模式带隙电压基准源。仿真得到典型工艺下电路在室温27℃,工作电压4．5V下输出电压1．25062V,工作电流小于38pA,功耗小于170μW。在-40～＋150℃。宽温度范围内,基准电压在1．25018～1．25086V之间变化,温度系数约为2．86ppm／℃。     

低失调二阶曲率补偿的带隙电压基准源设计

基于斩波运算放大器的曲率补偿CMOS带隙电压基准源电路,采用了折叠式的一阶放大器,较二阶结构线路简单,功耗低,版图面积小,并能很好地满足增益要求.采用二阶电流补偿进行曲率补偿,使带隙电压基准源能达到更好的温度系数,且系统稳定.应用0.5μm CMOS Spice模型进行了运算放大器和带隙电压基准源的电路仿真,输出电压为1.17V,在-20℃至120℃温度下,温度系数为4.7ppm/℃.该基准电压可根据工艺和内部电阻元件选取的不同获得不同电压值,其温度范围能够满足实际工作环境的需要.     

Photonic bandgap fibre oscillators and amplifiers

In the search for ever higher output power or energy from fibre oscillators or amplifiers a nowadays mature technology relies on enlarging the fibre mode area. Broadening of the core diameter, all other things being equal, inevitably yields a multimode fibre, thereby dramatically limiting the device usefulness. Various strategies have been deployed to design and manufacture single transverse mode fibre oscillators and amplifiers, among which making use of the so-called photonic bandgap effect to restrict the modal population seems promising. Helped by efficient and reliable numerical tools the design of large mode area singlemode photonic bandgap fibres is presented. Two fibres with 20-μm and 40-μm core diameter, both of them heavily doped with Yb³⁺ ions, have been fabricated by the widespread modified chemical vapour deposition process and are shown to behave properly when used as the core element of either continuous wave oscillators or femtosecond amplifiers. Good output beam quality (M² parameter spanning from 1.12 to 1.5 for the set of fibres studied) and high slope efficiency of 80% in cw oscillation regime are demonstrated. Furthermore the 40-μm core diameter fibre is shown to be resilient to tight bending down to 7.5-cm radius. The stack-and-draw process makes it easy to tailor the outer cladding so that a large numerical aperture can be reached. Subsequently, from this air-clad fibre, 500 fs 47 W pulses at 35 MHz are obtained from a two-stage chirped pulse amplification system.     

A curvature calibrated bandgap reference with base-emitter current compensating in a 0.13μm CMOS process

In bandgap references,the effect caused by the input offset of the operational amplifier can be effectively reduced by the utilization of cascade bipolar junction transistors(BJTs).But in modern CMOS logic processes,due to the small value ofβ,the base-emitter path of BJTs has a significant streaming effect on the collector current,which leads to a large temperature drift for the reference voltage.To solve this problem,a base-emitter current compensating technique is proposed in a cascade BJT bandgap refe...     

透明导电ZnO：Sn薄膜光学和电学性能的研究进展

纯ZnO电阻率高,电学性能不稳定,通过掺杂其他元素提高其光电性能,制备出高质量的ZnO薄膜是实现其应用的关键。文章从制备方法、掺杂浓度和退火等方面综述了Sn掺杂ZnO(ZnO:Sn)薄膜光电性能的研究进展,提出了降低ZnO:Sn薄膜电阻率和提高透光率的有效途径。     

A novel on-chip high to low voltage power conversion circuit

A novel power supply transform technique for high voltage IC based on the TSMC 0.6μm BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm2 area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/℃. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.     

柱形光子晶体波导中偏振光的传输模式和禁带特征

利用光波在一维有限周期柱型光子晶体波导中径向受限的条件,推导出TE波和TM波2种偏振光在一维有限周期柱型光子晶体波导中各个传输模式满足的关系式。研究了各个传输模式的特征,计算出TE波和TM波传输各模式的禁带随周期数、模式量子数、圆柱半径以及入射角的变化规律,得出了一维有限周期柱型光子晶体波导中TE波和TM波各传输模式带隙的结构。