工艺因素对低压化学气相沉积氮化硅薄膜的影响

以硅烷和氨气分别做为硅源和氮源,以高纯氮气为载气,采用热壁式管式反应炉,通过低压化学气相沉积(low pressure chemical vapor deposition,LPCVD)技术制备了氮化硅薄膜(SiN_x)。借助椭圆偏振仪研究了SiN_x薄膜的生长动力学,通过Fourier红外光谱和X光电子能谱表征了SiN_x薄膜的性质,并利用原子力显微镜观察了SiN_x薄膜的微观形貌。在其它工艺条件相同的情况下,SiN_x薄膜的生长速率随着工作压力的增大单调增加,原料气中氨气与硅烷的流量之比(R)对薄膜的生长速率有相反的影响。随着反应温度的升高,沉积速率逐渐增加,在840℃附近达到最大,随后迅速降低。当R<2时获得富Si的SiN_x薄膜(x<1.33);当R>4时获得近化学计量(z≈1.33)的SiN_x薄膜。     

氮化硅基陶瓷连接技术的研究进展

陶瓷连接技术是结构陶瓷实用化的有效手段，焊料成分对连接体的性能具有决定性作用。本文主要从焊料成分选择的角度，总结了氮化硅基陶瓷连接技术的发展现状；并重点讨论了陶瓷／玻璃复合焊料在β-Sialon陶瓷连接中的应用。     

炭/炭复合材料制造硅晶体生长坩埚初探

多晶硅用直拉法(CZ)或磁场直拉法(MCZ)拉制成单晶硅棒。晶体生长炉热场零件中的石墨发热体、坩埚等在机械应力和热应力的综合作用下发生变形或损坏造成失效,更换频繁。选用纯度高的炭纤维制成待制件的多孔坯体,经过增密、纯化处理制成炭／炭复合材料坩埚。试制的两体12″炭／炭复合材料坩埚进行了工业性试验。炭／炭复合材料机械强度高、耐热冲击性能和化学稳定性好,其使用寿命大大高于高纯石墨坩埚。两体的连接止口的氧化侵蚀限制了坩埚的使用寿命。单晶硅设备的大型化、炭／炭复合材料势必成为晶体生长炉热场零件的必选材料。     

逆反应烧结制备铝电解槽用氮化硅-碳化硅复合材料

采用常规的反应烧结工艺制作铝电解槽侧壁材料用Si3N4／SiC时存在不足，为此，提出应用逆反应烧结工艺进行生产性试验的设想。在制备Si3N4／SiC复合材料时，常规反应烧结是以Si和SiC为原料经氮化烧结；逆反应烧结是以Si3N4和SiC为原料，首先使Si3N4反向反应生成活性氧化物后进行烧结。结果表明：该工艺特点是新生的Si2N2O或SiO2进行活性烧结；制品具有良好的物理和化学性能。制品结构紧密，新生氧化物或亚氧化物紧密地充填在Si3N4和SiC颗粒间界，新工艺制备的砖的抗冰晶石熔体侵蚀的性能优于常规工艺烧成砖，是铝电解槽侧壁的良好材料。     

Effect of Grain Boundaries on Thermal Conductivity of Silicon Carbide Ceramic at 5 to 1300 K

The thermal conductivity of a SiC ceramic was measured as 270 W·m⁻¹·K⁻¹ at room temperature. At low temperatures ( T < 25 K), the decrease in the conductivity was proportional to T ³ on a logarithmic scale, which indicated that the conductivity was controlled by boundaries. The calculated phonon mean free path in the ceramic increased with decreased temperature, but was limited to ∼4 μm, a length almost equal to the grain size, at temperatures below 30 K. We concluded that the thermal conductivity of the ceramic below 30 K was influenced significantly by grain boundaries and grain junctions.     

Role of Interfacial Carbon layer in the Thermal Diffusivity/Conductivity of Silicon Carbide Fiber-Reinforced Reaction-Bonded Silicon Nitride Matrix Composites

The role of an interfacial carbon coating in the heat conduction behavior of a uniaxial silicon carbide nitride was investigated. For such a composite without an interfacial carbon coating the values for the thermal conductivity transverse to the fiber direction agreed very well with the values calculated from composite theory using experimental data parallel to the fiber direction, regardless of the ambient atmosphere. However, for a composite made with carbon-coated fibers the experimental values for the thermal conductivity transverse to the fiber direction under vacuum at room temperature were about a factor of 2 lower than those calculated from composite theory assuming perfect interfacial thermal contact. This discrepancy was attributed to the formation of an interfacial gap, resulting from the thermal expansion mismatch between the fibers and the matrix in combination with the low adhesive strength of the carbon coating. In nitrogen or helium the thermal conductivity was found to be higher because of the contribution of gaseous conduction across the interfacial gap. On switching from vacuum to nitrogen a transient effect in the thermal diffusivity was observed, attributed to the diffusion-limited entry of the gas phase into the interfacial gap. These effects decreased with increasing temperature, due to gap closure, to be virtually absent at 1000°C.     

硅微阵列陀螺仪闭环驱动控制技术研究

为了进一步提高硅微阵列陀螺仪驱动模态的控制精度与稳定性,深入分析了硅微阵列陀螺仪的结构设计和闭环驱动控制技术。基于硅微阵列陀螺仪闭环驱动控制的特点,以现场可编程门阵列(FPGA)为核心控制平台,实现一种基于自激振荡原理的数字化闭环驱动电路。分析并建立了自激振荡与幅度控制的基本模型,基于Simulink实现了闭环自激驱动的仿真。实验结果表明,常温下驱动幅度控制精度达到9×10~(-5),并能有效跟踪驱动模态谐振频率。     

硅溶胶—苯丙乳液复合路标涂料的研制

采用正硅酸乙酯(TEOS)为主要原料,以聚合溶胶法制备硅溶胶,制得的硅溶胶与苯丙乳液冷拼复配得到复合基料,再以该基料制得硅溶胶—苯丙复合路标涂料。通过正交试验分别确定了制备硅溶胶、硅溶胶—苯丙复合乳液和硅溶胶—苯丙复合路标涂料的最优方案。