Graphene‐Bonded and ‐Encapsulated Si Nanoparticles for Lithium Ion Battery Anodes

Silicon (Si) has been considered a very promising anode material for lithium ion batteries due to its high theoretical capacity. However, high‐capacity Si nanoparticles usually suffer from low electronic conductivity, large volume change, and severe aggregation problems during lithiation and delithiation. In this paper, a unique nanostructured anode with Si nanoparticles bonded and wrapped by graphene is synthesized by a one‐step aerosol spraying of surface‐modified Si nanoparticles and graphene oxide suspension. The functional groups on the surface of Si nanoparticles (50–100 nm) not only react with graphene oxide and bind Si nanoparticles to the graphene oxide shell, but also prevent Si nanoparticles from aggregation, thus contributing to a uniform Si suspension. A homogeneous graphene‐encapsulated Si nanoparticle morphology forms during the aerosol spraying process. The open‐ended graphene shell with defects allows fast electrochemical lithiation/delithiation, and the void space inside the graphene shell accompanied by its strong mechanical strength can effectively accommodate the volume expansion of Si upon lithiation. The graphene shell provides good electronic conductivity for Si nanoparticles and prevents them from aggregating during charge/discharge cycles. The functionalized Si encapsulated by graphene sample exhibits a capacity of 2250 mAh g^?1 (based on the total mass of graphene and Si) at 0.1C and 1000 mAh g^?1 at 10C, and retains 85% of its initial capacity even after 120 charge/discharge cycles. The exceptional performance of graphene‐encapsulated Si anodes combined with the scalable and one‐step aerosol synthesis technique makes this material very promising for lithium ion batteries.     

Analysis on the interfacial properties of transparent conducting oxide and hydrogenated p-type amorphous silicon carbide layers in p-i-n amorphous silicon thin film solar cell structure

Quantitative estimation of the specific contact resistivity and energy barrier at the interface between transparent conducting oxide (TCO) and hydrogenated p-type amorphous silicon carbide (a-Si_1 − xC_x:H(p)) was carried out by inserting an interfacial buffer layer of hydrogenated p-type microcrystalline silicon (μc-Si:H(p)) or hydrogenated p-type amorphous silicon (a-Si:H(p)). In addition, superstrate configuration p-i-n hydrogenated amorphous silicon (a-Si:H) solar cells were fabricated by plasma enhanced chemical vapor deposition to investigate the effect of the inserted buffer layer on the solar cell device. Ultraviolet photoelectron spectroscopy was employed to measure the work functions of the TCO and a-Si_1 − xC_x:H(p) layers and to allow direct calculations of the energy barriers at the interfaces. Especially interface structures were compared with/without a buffer which is either highly doped μc-Si:H(p) layer or low doped a-Si:H(p) layer, to improve the contact properties of aluminum-doped zinc oxide and a-Si_1 − xC_x:H(p). Out of the two buffers, the superior contact properties of μc-Si:H(p) buffer could be expected due to its higher conductivity and slightly lower specific contact resistivity. However, the overall solar cell conversion efficiencies were almost the same for both of the buffered structures and the resultant similar efficiencies were attributed to the difference between the fill factors of the solar cells. The effects of the energy barrier heights of the two buffered structures and their influence on solar cell device performances were intensively investigated and discussed with comparisons.     

掺硼非晶硅薄膜的微结构和电学性能研究

以硅烷(SiH4)和硼烷(B2H6)为气相反应先驱体，采用等离子体增强化学气相沉积法，(PECVD)制备出能应用于液晶光阀光导层的硼掺杂非晶氢硅薄膜。X射线衍射、原子力显微镜和光、暗电导测试表明，一定程度的硼掺杂提高了非晶氢硅薄膜的电导率、降低了非晶氢硅薄膜的光、暗电导比；硼掺杂促进薄膜晶态率的增加和硅晶粒尺寸的增大，薄膜的结晶状态将逐渐从非晶硅过渡到纳米硅，最后发展为多晶硅。红外吸收谱研究表明了大量的硼原子与硅、氢原子之间能形成某些形式的复合体，仅有少量硼元素对受主掺杂有贡献。     

Si和C共掺杂的SiO2薄膜的光致发光

采用双离子束溅射技术制备了Si和C共掺杂的SiO2薄膜,在N2气氛下进行了不同温度的退火处理。分析了样品在室温下的光致发光(PL)特性,在该样品中观察到分别位于410nm和470nm的两个发光峰。这两个发光峰的强度随着退火温度的变化呈现不同的变化趋势,表明两个发光峰的来源并不相同。用XRD和FTIR测试手段分析了样品的结构,认为470nm的发光来源于中性氧空位缺陷(O3≡Si～Si≡O3),而410nm的发光来源于Si1-xCx纳米晶粒与SiO2基质之间的界面缺陷。     

异形截面SiC陶瓷纤维的制备工艺与性能研究进展

异形纤维是指截面为非圆形的纤维,由于异形截面SiC纤维具有特殊的电磁性能,已受到研究者的广泛重视。从熔融纺丝成型和化学成型两方面综述了近年来C形、中空形、三叶形、条形、十字形等异形截面SiC陶瓷纤维的制备方法与性能,概述了部分异形纤维的应用进展,针对目前异形截面SiC纤维的制备方法存在的不足,对后续发展方向作了展望。     

Characterization of structural films using microelectromechanical resonators

Micromachined resonant fatigue characterization structures have been used by a variety of investigators to evaluate the stress‐life fatigue behaviour of thin films. This work will review the design, testing and analysis of these versatile thin‐film characterization structures. Subsequent discussion will illustrate how this material characterization approach has been used to evaluate the high‐cycle fatigue behaviour of silicon films commonly used in microelectromechanical systems (MEMS). This work demonstrates that properly designed resonators can be used to monitor extraordinarily low fatigue crack growth rates (i.e. ? 10^?10 m/cycle) relevant to these minute mechanical components.     

硅基双层复合自组装分子膜结构特性及其润湿行为的分子动力学模拟

用分子动力学方法模拟了单晶硅（Si）表面N-3-（三甲氧基硅烷基）丙基乙二胺（DA）-月桂酰氯（LA）（DA-LA）双层复合自组装分子膜（SAMs）的结构特性,得到膜层中DA和LA分子的最佳覆盖率及分布情况。进一步讨论了水滴在DA-LA双层复合SAMs表面的润湿过程,通过接触角和径向分布函数等参量对其润湿行为进行了分析。研究表明：DA分子在Si上覆盖率为50%、LA分子在DA自组装单分子膜（DA SAM）上接枝率为100%时,分子膜呈有序排布,体系能量最低,从分子角度揭示了Si表面覆盖致密SAMs的形成机制。当取最佳覆盖率体系进行润湿机制模拟时,DA-LA双层复合SAMs表面水滴接触角与实验值相似,表现出良好的疏水性。而DA SAM表面由于DA分子短而稀疏,暴露出底层更亲水的羟基分子,从而导致所得接触角较实验偏小;经测量及计算得出,羟基化Si表面自由能最高,表现出较强的亲水性;DA表面次之;DA-LA表面自由能最低,表现出良好的疏水性。进一步分析发现：羟基化Si表面、DA SAM表面与水滴间存在氢键,加强了表面的亲水性,而DA-LA双层复合SAMs表面与水滴间只存在弱范德华力,有利于表面呈现疏水性。     

焦化汽柴油加氢捕硅剂的制备及性能评价

目的 脱除焦化汽柴油馏分中的有机硅化合物,避免催化剂硅中毒。方法 以拟薄水铝石粉为载体制备原料,镍钼为活性金属组分,采用等体积浸渍法制备了加氢捕硅剂,利用N₂吸附脱附、X射线衍射、吡啶红外光谱、扫描电镜等方法对其进行分析表征,并在200 mL加氢中试装置上考查了捕硅剂的脱硅活性和2 000 h活性稳定性。结果 自主开发的捕硅剂比表面积和孔容较高,酸性适宜,活性金属分布均匀,强度满足工业装置装填要求。捕硅剂的脱硅活性较高,在典型的工业条件下,脱硅率>90%,在2 000 h活性稳定性试验过程中,脱硅率稳定>90%,活性稳定性良好,且具有较高的容硅能力。结论 自主开发的捕硅剂具有广阔的工业应用前景,对清洁燃料的生产及保护装置的长周期稳定运行具有十分重要的意义。     

AlSiC电子封装材料及器件物理性能研究进展

AlSiC电子封装材料及器件的关键指标是膨胀系数、热导率和气密性。不同工艺条件下制备的AlSiC电子封装材料物理性能相差较大。尽管已建立一些理论模型预测AlSiC电子封装材料的膨胀系数和热导率，但由于基体塑性变形、粘接剂类型及含量、粉末尺寸等许多因素影响，理论结果与实验结果相差较大。热循环过程中，基体合金类型、增强体尺寸、预处理方法和热循环次数等明显影响AlSiC电子封装材料的尺寸稳定性。温度循环对AlSiC电子封装材料物理性能的影响尚未见公开报道。     

High rate deposition of microcrystalline silicon films using jet-type inductively coupled plasma chemical vapor deposition

Microcrystalline silicon (μc-Si) films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD), and the deposition rate, microstructure and electrical properties of the deposited films were investigated. It was demonstrated that a high deposition rate of over 20 nm/s can be achieved while maintaining high crystallinity and low dark conductivity. The deposition rate is well controlled by regulating the generation rate and transport of growth precursors. High crystallinity of the films results principally from hydrogen-induced chemical annealing. Furthermore, the excellent electrical properties benefit from the low oxygen content and/or low deposition temperature.