Oxidation resistance and thermal stability of the SiC-ZrB2 composite ceramic fibers

In this study, continuous SiC-ZrB₂ composite ceramic fibers were synthesized from a novel pre-ceramic polymer of polyzirconocenecarbosilane (PZCS) via melt spinning, electron beam cross-linking, pyrolysis, and finally sintering at 1800°C under argon. The ZrB₂ particles with an average grain size of 30.7 nm were found to be uniformly dispersed in the SiC with a mean size of 59.7 nm, as calculated using the Scherrer equation. The polycrystalline fibers exhibit dense morphologies without any obvious holes or cracks. The tensile strength of the fibers was greater than 2.0 GPa, and their elastic modulus was ~380 GPa. After oxidation at 1200°C for 1 hour, the strength of the fibers did not decrease despite a small loss of elastic modulus. Compared to the advanced commercial SiC fibers of Tyranno SA, the fibers exhibited improved high-temperature creep resistance in the temperature range 1300-1500°C.     

Transmission electron microscopy study of extended defect evolution and amorphization in SiC under Si ion irradiation

The damage induced in 3C-SiC epilayers on a silicon wafer by 2.3-MeV Si ion irradiation for fluences of 10¹⁴, 10¹⁵, and 10¹⁶ cm⁻², was studied by conventional and high-resolution transmission electron microscopy (TEM/HRTEM). The evolution of extended defects and lattice disorder is followed in both the 3C-SiC film and Si substrate as a function of ion fluence, with reference to previous FTIR spectroscopy data. The likelihood of athermal unfaulting of native stacking faults by point defect migration to the native stacking faults is discussed in relation to damage recovery. Threshold energy densities and irradiation doses for dislocation loop formation and amorphous phase transformation are deduced from the damage depth profile by nuclear collisions. The role of electronic excitations on the damage recovery at high fluence is also addressed for both SiC and Si.     

Relation between crystal structure and lattice oxygen content of sintered reaction-bonded silicon nitride

When reaction-bonded silicon nitride containing MgO/Y₂O₃ additives is sintered at three different temperatures to form sintered reaction-bonded silicon nitride (SRBSN), the thermal conductivity increases with sintering temperature. The β-Si₃N₄ (silicon nitride) crystals of SRBSN ceramics were synthesized and characterized to investigate the relation between the crystal structure and the lattice oxygen content. The hot-gas extraction measurement result and the crystal structure obtained using Rietveld analysis suggested that the unit cell size of the β-Si₃N₄ crystal increases with the decrease in the lattice oxygen content. This result is reasonable considering that the lattice oxygen with the smaller covalent radius substitutes nitrogen with the larger one in the β-Si₃N₄ crystals. The lattice oxygen content decreased with increasing sintering temperature which also correlated with increase in thermal conductivity. Moreover, it is noteworthy from the viewpoint that it may be possible to apply the lattice constant analysis for the nondestructive and simple measurement of the lattice oxygen content that deteriorates the thermal conductivity of the β-Si₃N₄ ceramics.     

Na2SO4 deposit-induced hot corrosion of SiC fibers relevant for SiC CMCs

Hi Nicalon, Hi Nicalon S, Sylramic, and Sylramic iBN SiC fibers were exposed to ~60 μg/cm² of Na₂SO₄ in a 0.1% SO₂/O₂ gaseous environment for times between 0.75 and 24 h at 1000°C. After exposure, the corrosion products were characterized using SEM, EDS, ICP-OES, TEM, and EFTEM to determine their high-temperature resistance to Na₂SO₄ and key reaction mechanisms. All SiC fiber types tested in this work exhibited little resistance to Na₂SO₄ deposit-induced attack relative to their behavior in dry O₂ environments. It was found that Hi-Nicalon displayed the least resistance to Na₂SO₄ deposit-induced attack due to excess carbon content resulting in the formation of a highly porous crystalline oxide and promotion of basic corrosion conditions. All fiber types formed a crystalline SiO₂ reaction product, either cristobalite or tridymite. Sylramic and Sylramic iBN formed a crystalline SiO₂ reaction layer containing TiO₂ needles due oxidation of TiB₂ particles. Additionally, Na₂SO₄ deposits resulted in pitting of all fiber surfaces.     

纳秒激光微刻蚀取向硅钢的形貌特征及磁性能

为有效降低取向硅钢铁损、改善其磁性能，采用红外纳秒激光对取向硅钢进行微刻蚀试验。利用3D共聚焦显微镜、扫描电镜与能谱仪研究典型工艺参数下的硅钢表面烧蚀形貌特征及表面质量，利用铁损仪测试不同刻蚀参数下取向硅钢的铁损、相对磁导率等磁性能参数及动态磁滞回线，对比分析刻痕前后磁性能的变化行为、规律及磁滞特性。结果表明：激光刻痕后，硅钢的铁损、相对磁导率、矫顽力及剩磁等性能得到明显改善，铁损的改善表现在高磁感强度下、相对磁导率的改善表现在低磁场强度下，回线特性得到优化。扫描速度为800 mm/s、脉冲能量为0.25 mJ时，刻痕边界呈近似规则的“波浪线”，且刻痕表面质量较高，铁损降低高达11.6%、剩磁降低12.8%等；刻痕后相对相对磁导率明显提高，提高约为5.7%~15.16%，最大可达2.598×10⁴。激光频率与扫描速度的耦合关系是影响刻痕边界形状与磁畴细化效果的重要因素。     

Recent progress of CERN RD50 Collaboration

The objective of the CERN RD50 Collaboration is to develop radiation hard semiconductor detectors for very high luminosity colliders, in particular, for the upgrade of the large hadron collider （LHC） which itself is scheduled to be operational in 2007. The approach of the RD50 has two major research lines, material engineering and device engineering. These are further subdivided into projects covering defect characterization and engineering, new detector materials, detector characterization, new detector structures and full detector systems. Presently, 264 members from 53 institutes are actively participating in the RD50 Collaboration. Detectors made of defect engineered substrates, e.g. high resistivity magnetic Czochralski （MCz-Si）, epitaxial silicon （Epi-Si） on Czochralski silicon （Cz-Si） substrate, intentionally thermal donor （TD） compensated p-type MCz-Si and oxygen enriched （DOFZ） silicon, have been demonstrated by the RD50 Collaboration. An overview and highlights of the results of these defect engineering techniques were given in this report.     

Study on interfacial structure and strength of Si_3N_4/Ti/Cu/Ti/Si_3N_4 PTLP bonding

0IntroductionRecently,the development of bonding technique ofhigh temperature structure ceramic Si3N4becomes a hottopic in the field of ceramic bonding[1].Partial transientliquid phase bonding(PTLP)has been applied in the fieldof high temperature ceramic bonding and made some pro-gress.The selection of interlayer materials is key to PTLPbonding.Since Bender discovered that Ag-based brazingmaterial including Ti could wet ceramic in1954,morestudies have shown that Ti has good wetting prope…     

纳米Ni粉填料对聚硅氮烷连接SiC陶瓷接头性能的影响

研究了活性填料纳米Ni粉对陶瓷先驱体聚硅氮烷连接反应烧结SiC陶瓷接头性能的影响，同时与惰性填料纳米SiC粉及活性填料微米Ni粉进行了对比，指出填料的种类及颗粒度对连接强度均有较大影响。活性填料纳米Ni粉的加入可减少连接层内的孔隙和裂纹，同时还可以与聚硅氮烷的裂解产物及母材发生反应，促进聚硅氮烷的裂解，从而降低连接温度，提高连接强度。当连接温度为1200℃时，其最大抗弯强度达到251．6MPa。微观研究表明，连接层结构较为均匀致密，且与母材间界面结合良好。惰性填料纳米SiC粉对连接强度没有明显改善。微米Ni粉因不能与先驱体形成均匀的连接层而导致连接强度降低。     

异步轧制取向硅钢中织构沿板厚的分布与发展

采用异步轧制对经过一次正常冷轧和中间退火的，厚度为０．７４６ｍｍ的工业取向硅钢实施一次速比为１．１７的异步冷轧，轧至０．３４ｍｍ，在普通的工艺条件下，进行退火，用ＯＤＦ和反板图定量研究各层织构的分布与转化，并测量了磁性。结果表明：在本工艺条件下，织构组分与传统冷轧相同，异步轧制板材的表层附近也出现了类似于正常轧制下位于亚表面层上的、理想的冷轧织构组分，但是已明显地偏向了快速辊侧表面、冷轧织构组态沿     

铜锌铝合金自催化生长硅纳米结构的研究

在常温常压下，以Cu-Zn—Al合金为基体经过简单的化学处理，在基体上成功地合成了直径为几十纳米，长度在微米量级的Si-维纳米结构。利用TEM，HREM，EDS等测试手段对Si-维纳米结构的形貌和微观结构进行了表征。观察到Cu-Zn-Al合金中存在着运动的“非线性振荡胞区”，并且发现Si-维纳米结构的生长和形貌与这些胞区的运动有着密切的关系。另外，对于Si-维纳米结构生长机制进行了初步探讨。