Steady-state and transient photoconductivity in hydrogenated amorphous silicon nitride films

Amorphous SiN_x:H films were prepared by the rf glow-discharge decomposition of ammonia/silane gas mixture with varying nitrogen content. The steady-state photoconductivity and its dependence on light intensity have been investigated in a-SiN_x:H as a function of temperature between 100 and 420 K. The electron drift mobility of a set of SiN_x:H samples has been determined from their steady-state photoconductivity and response time measurements. The results suggest that electron drift mobility of the samples was nearly unchanged for a low nitrogen content. Two samples containing lowest nitrogen showed higher photoconductivity than that of unalloyed sample within a temperature range including the room temperature.     

钛硅分子筛催化环己酮氨肟化反应过程--本征动力学

对钛硅分子筛(HTS)催化环己酮氨肟化反应本征动力学进行了研究。利用经验方程拟合了试验数据，并采用Marquardt算法对经验方程的参数进行确定，获得了不同试验条件下的反应初速率，然后再用高斯-牛顿法对本征动力学模型进行了参数估计，得出了氨肟化反应以及该反应体系中H2O2分解的本征动力学。并对该模型进行了残差分析和F检验，对氨肟化反应和H2O2分解的动力学模型的计算值与试验值进行了比较，获得相对误差绝对值的平均值分别为5．21％和6．25％。表明该模型能真实反映HTS催化环己酮氨肟化的反应特性，是合理可靠的，能为进一步的过程开发与工程设计提供一些理论上的指导和设计上的依据；而H2O2分解副反应动力学模型仅适用于该反应体系。     

WG硅微粉及用于塑料制品的试验

简要介绍了硅粉的理化性能，分析了WG硅微粉的形成过程，并进行了用于塑料制品的使用性能的试验研究，为硅粉用于塑料制品工艺提供了有利的借鉴。     

Influence of deposition parameters on hole mobility in polymorphous silicon

Time-of-flight transient photoconductivity measurements reveal a monotonic increase with the deposition pressure in the hole mobility in polymorphous silicon for samples deposited under hydrogen dilution. With helium dilution, a maximum mobility that matches the highest value from H-dilution samples is measured at the intermediate pressure of 1.4 Torr. The deposition rate of those samples is twice the rate for the H-dilution ones. For the samples with the best hole mobilities, the valence-band tail is comparable to the one of standard hydrogenated amorphous silicon.     

Synthesis of silicon oxynitride by infiltration-mediated combustion

Silicon oxynitride Si₂N₂ O was synthesized from a mixture of Si, SiO₂, and Si₃N₄ by infiltrationmediated combustion in nitrogen gas. The chemical/phase composition of product and process parameters (temperature and burning velocity) were studied upon variation in charge composition and initial pressure of gas reagent. Parameters of the reaction yielding single-phase Si₂N₂O have been optimized.      

Suppression of photo-induced dilation in cyanide treated hydrogenated amorphous silicon films

Effects of cyanide (CN) treatment with hydrogenated amorphous silicon (a-Si:H) films have been investigated. The decrease of ΔV/V was observed in cyanide treated a-Si:H films and the successive thermal annealing at 200°C after CN treatment induced the further reduction of the ΔV/V. XPS spectra show the indirect evidence that the cyanide species is present within 10 nm from the hydrogenated amorphous silicon surface. The results of CN treatment with a-Si:H solar cells are demonstrated.     

Estimating thermal stress in BIPV modules

The thermal stress on building‐integrated photovoltaic modules (BIPV) in Espoo, Finland, was studied with field‐testing of amorphous silicon modules. Based on these results, the thermal stress at two other European locations (Paris and Lisbon) was estimated. The estimation procedure entailed thermal modelling of heat transfer in the façade with meteorological data as input. The results indicate that the thermal stress on BIPV modules in Lisbon is, in this case, approximately 50% higher that in Espoo and between 80 and 200% higher than in Paris, depending on the activation energy of the degradation process. The difference in stress between a BIPV module and a free‐standing module in Espoo was 50–200%. Copyright © 2006 John Wiley & Sons, Ltd.     

Hydrogenated amorphous semiconductors

Solar cells based on hydrogenated amorphous silicon are now made from a variety of materials including alloys and microcrystalline films. Research aimed at improving cell efficiency should emphasize studies of alloys and metastable defects. We discuss several research topics related to the growth, structure, and electronic properties of these materials, which should lead to improved photovoltaic devices.     

碳化硅加热元件的电性能和使用

本文介绍碳化硅加热元件的电特性、表面负荷以及工作气氛对它的影响，并对它设计和使用要点举例予以说明。     

PECVD方法用于梯度薄膜材料的研究

本文研究了ＰＥＣＶＤ方法制备Ｓｉ－Ｏ－Ｍ系梯度薄膜材料，并运用计算机控制技术成功地制备了涂层折射率随膜深成正弦波形式连续变化的Ｒｕｇａｔｅ单通带滤波器样品。结果表明，采用ＰＥＣＶＤ方法可以制备性能上乘、结构复杂的梯度薄膜材料，ＰＥＣＶＤ方法在研究、开发高级光学涂层领域有着宽广的应用前景。