In this study, macroscopic graphene-wrapped melamine foams (MF-G) were fabricated by an MF-templated layer-by-layer (LBL) assembly using graphene oxide as building blocks, followed by solution-processed reduction. By concisely duplicating sponge-like, highly ordered three-dimensional architectures from MF, the resulting MF-G with an interconnected graphene-based scaffold and tunable nanostructure was explored as compressible, robust electrodes for efficient energy storage. A thin layer of pseudocapacitive polypyrrole (PPy) was then attached and uniformly coated on MF-G, resulting in a well-defined core–double-shell configuration of the MF-G-PPy ternary composite sponges. The as-assembled devices exhibited enhancement of supercapacitor performance, with a high specific capacitance of 427 F·g?1 under a compressive strain of 75% and an excellent cycling stability with only 18% degradation after 5,000 charge–discharge cycles. Besides, the MF-G-PPy electrode maintained stable capacitance up to 100 compression–release cycles, with a compressive strain of 75%. These encouraging results thus provide a new route towards the low-cost, easily scalable fabrication of lightweight and deformation-tolerant electrodes.
The ion implantation of He is examined as a means to form thermally stable cavities in GaAs. Room-temperature implantation of 2–10 × 1016 He/cm2 at 40 or 50 keV forms bubbles, but subsequent annealing at 250°C or above leads to exfoliation of the implanted surface layer. The exfoliation appears related to the agglomeration of bubbles on dislocations at the back of the layer; evidence suggests these may be misfit dislocations formed to relieve compressive stress in the implanted layer. Implantation of He at 150°C produces similar results, whereas the He diffuses out of GaAs without forming cavities during implantation at 300°C. However, implantations of immobile Ar followed by He at 400°C produce extended defects with bubbles in the implanted layer; the He can be degassed by subsequent annealing at 400°C to produce 1.5–3.5 nm cavities that are stable at this temperature. The same treatment applied to an In0.10Ga0.90As/GaAs heterostructure produces larger cavities preferentially located on dislocations at the interface, with only slight reduction in strain of the epitaxial layer. The microstructures of both GaAs and the heterostructure clearly demonstrate an attractive interaction between bubbles or cavities and dislocations. 相似文献
