AlN插入层与AlGaN/GaN HEMT电流崩塌效应的关系

比较有无AlN插入层AlGaN/GaN HEMTs在直流偏置应力条件下的电流崩塌程度,研究AlN插入层对电流崩塌的影响.从测试结果看,无AlN插入层的AlGaN/GaN HEMTs有更显著的电流崩塌程度,表明AlN插入层对电流崩塌效应有显著的抑制作用.模拟的AlGaN/GaN能带结构表明,AlN插入层能显著提高AlGaN导带底能级,增加异质结的带隙差.带隙差的增加有利于减小电子遂穿几率,加强沟道二维电子气的量子限制,从而抑制电流崩塌效应.     

高速单片数字相关器VLSI结构研究

提出了一种高速单片数字相关器VLSI结构设计方法,结合扩频解扩芯片的实际需要,设计了包含16路数字相关器、集成规模达20万门的试验芯片,采用0.5μm三层金融CMOS工艺制造,测试表明,在3.3V工作电压和60MHz工作频率下,芯片的各项性能均达到设计要求。     

Spidermen Strategy for Stable 24% Efficiency Perovskite Solar Cells

The interface energetics-modification plays an important role in improving the power conversion efficiency (PCE) among the perovskite solar cells (PSCs). Considering the low carrier mobility caused by defects in PSCs, a double-layer modification engineering strategy is adopted to introduce the “spiderman” NOBF₄ (nitrosonium tetrafluoroborate) between tin dioxide (SnO₂ and perovskite layers. NO⁺, as the interfacial bonding layer, can passivate the oxygen vacancy in SnO₂, while BF₄⁻ can optimize the defects in the bulk of perovskite. This conclusion is confirmed by theoretical calculation and transmission electron microscopy (TEM). The synergistic effect of NO⁺ and BF₄⁻ distinctly heightens the carrier extraction efficiency, and the PCE of PSCs is 24.04% with a fill factor (FF) of 82.98% and long-term stability. This study underlines the effectiveness of multifunctional additives in improving interface contact and enhancing PCE of PSCs.     

电信转型——有计划的革命性变革

本文在研究大量组织变革文献的基础上,指出企业转型就是对企业实施有计划的革命性变革,试图从四个层面建立研究企业转型的框架,并对转型过程进行了初步探讨,最后结合电信企业转型实践,具体分析电信企业如何转型.     

基于MPSK信号的实用高精度的载频盲估计研究

在现代电子信息中,精确的载频估计是接收信息正确解调的基础。基于MPSK调制信号提出一种实用性、高精度的载频盲估计新算法。利用自相关函数的原理,把谱相关的计算量降到了一般的数字电路可以实现的程度,并且在低信噪比的情况下估计结果优良;通过粗估计和精估计两次运算来提高载频的盲估计精度。经过理论分析和MATLAB仿真验证说明本算法的正确性和可行性。     

光电印制电路板的发展评述（3）——聚合物光波导层的成型工艺（1）

文章简述了光电印制电路板中聚合物光波导层的制作应该遵循的原则,介绍了光波导层的主要成型工艺,包括反应离子蚀刻、平版影印、激光烧蚀和加热模压等方法。     

单载波MIMO对流层散射系统的信道估计

针对对流层散射信道的频率选择性,提出了一种基于训练序列的单载波空时分组编码(Space Time Block Code,STBC)系统的信道估计算法。首先建立了单载波空时分组编码系统的系统模型,确定了发送分组结构和接收技术;接着提出了信道估计算法,并讨论该算法中Chu序列的最优性;最后通过仿真分析了信道估计算法的性能和效率。     

Effect of hydrogen annealing on hot-carrier instability of X-Ray irradiated CMOS devices

In the very large scale integration (VLSI) technology, the need for high density and high performance integrated circuit (IC) chip demands advanced processing techniques that often result in the generation of high energy particles and photons. Frequently, the radiation damage are introduced by these energetic particles and photons during device processing. The radiation damage created by x-ray irradiation, which can often occur during metal sputtering process, has been shown to potentially enhance hot-carrier instability if the neutral traps which act as electron or hole traps in the silicon dioxide is not annealed out. In this paper, we investigate the effects of annealing using different hydrogen contents and temperatures on the device characteristics and hot carrier instability of 0.5 μm CMOS devices after 1500 mJ/cm² synchrotron x-ray irradiation. Three different annealing conditions were employed; 400° C H₂, 450° C H₂, and 400° C H₂ + N₂. It is found that for all three different hydrogen anneals the normal characteristics of irradiated CMOS devices can be effectively recovered. The hot-carrier instability of bothp- andn-channel MOSFETs are significantly enhanced after x-ray irradiation due to the creation of neutral traps and positively charged oxide traps. After high H₂ (100%) concentration anneals at 450° C, the hot-carrier instability in irradiatedn-channel devices is greatly reduced and comparable to the non-irradiated devices. Although the hot-carrier instability inp-channel devices is also significantly reduced after annealing, the threshold voltage shifts are still enhanced as compared to the devices without exposure to x-ray irradiation during maximum gate current stress. For those non-irradiated, but hydrogen-annealedp-channel devices, the hot-carrier instability was observed to be worse than the non-irradiated device without hydrogen annealing.     

环氧聚酯美术型粉末涂料及其防腐性能试验研究

通过多年来的批量生产实践,阐述了环氧聚酯美术粉末涂料的组成及其对原材料的要求和在电子测量仪器表面装饰的应用;并介绍其涂覆层经人工加速试验耐盐雾试验和耐湿热试验的结果,以及在各种气候条件下,经一年的天然暴露试验结果。     

宽带网络SOQPSK突发波形

空基网络通信应用中,采用恒包络波形体制可以降低设备特别是功放的复杂度,因此高效的成形偏移四相相移键控(SOQPSK)信号非常适合于空基网络。但是机载通信中多普勒频移较大,在低信噪比和短突发条件下,SOQPSK相干接收机必须有精确的载波频率和相位同步才能获得较好的性能。针对低信噪比和短突发场景,提出了基于Turbo乘积码（TPC）编码的扩频SOQPSK宽带网络波形,并设计了导频与数据帧结构,利用译码器输出的软信息来改善载波同步的性能,通过迭代操作和联合解调、解扩,增强了系统的同步性能。仿真结果表明,在误码率为10-6时所需Eb/N0为3.65 dB,达到了波形设计指标要求。