离子注入型硅掺砷阻挡杂质带长波红外探测器的研究

研究了基于离子注入技术制备硅掺砷阻挡杂质带探测器的工艺,通过优化工艺条件和相关器件的结构与材料参数,制造了具有良好光电响应性能的长波红外探测器。在温度5 K,-3.8 V工作偏压下,探测器的峰值响应波长为23.8μm,黑体响应率为3.7 A/W,3.2 V时最大探测率为5.2×10~(13) cm·Hz~(1/2)/W。性能指标堪与文献报道的结果相媲美甚至更好,展示了离子注入工艺在制作阻挡杂质带探测器方面的潜在优势,特别是离子注入工艺与目前的微电子电路技术相兼容,能将探测器与读出电路集成到一块芯片上,在降低成本的同时提高探测器成像性能。     

Effects of electron- and impurity-ion-LO phonon couples on the impurity states in cylindrical quantum wires

The variational method and the effective mass approximation are used to calculate the phonon effects on the hydrogenic impurity states in a cylindrical quantum wire with finite deep potential by taking both the couplings of the electron-confined bulk longitudinal optical (LO) phonons and the impurity-ion-LO phonons into account.The binding energies and the phonon contributions are calculated as functions of the transverse dimension of the quantum wire. The results show that the polaronic effect induced by the electron-LO phonon coupling and the screening effect induced by the impurity-ion-LO phonon coupling tend to compensate each other and the total effects reduce the impurity binding energies.     

SIMS在碲镉汞红外焦平面探测器工艺中的应用

文章介绍了二次离子质谱仪的结构及其基本工作原理,并通过对典型应用的分析,介绍了二次离子质谱分析技术在高灵敏度碲镉汞红外焦平面探测器材料和器件制备工艺中的作用,特别是在结探监测和微量杂质监控方面所发挥的重要作用。     

Correlation between chemical and electrical profiles in Si+, Se+ and S+ implanted bulk and epitaxial GaAs

We compare the chemical profiles of Cr, Mn, Si and Se with the electron concentration profiles in Si, Se and S implanted semi-insulating Cr-O doped bulk GaAs substrates and undoped VPE buffer layers annealed with and without a SiO₂ encapsulant in a H₂-As₄ atmosphere. A higher activation efficiency in the net electron concentration and the gateless saturated channel current is measured for SiO₂ encapsulated wafers annealed under arsine overpressure than for capless annealed ones using Cr-O doped bulk GaAs substrates. On the other hand, the net donor concentration peak is higher for implanted buffer epi layers capless annealed under arsine overpressure than for SiO₂ encapsulated ones. Secondary ion mass spectrometry (SIMS) studies of the Cr decoration of the implant damage indicate that the damage from the 100 keV Si implant anneals out at 840°C while a temperature of 900°C is required to anneal out the 260 keV Se implant damage. An explanation of these differences is provided using an impurity redistribution model and charge neutrality considerations. Excellent Hall electron mobilities at liquid nitrogen temperature of 5400–9200 cm²/V-sec are measured for Si-implanted buffer epi substrates.     

The behavior of unintentional impurities in Ga0.47 In0.53As grown by MBE

A number of factors contribute to the high n-type background carrier concentration (high 10¹⁵ to low 10¹⁶ cm⁻³) measured in MBE Ga_0.47In_0.53As lattice-matched to InP. The results of this study indicate that the outdiffusion of impurities from InP substrates into GalnAs epitaxial layers can account for as much as two-thirds of the background carrier concentration and can reduce mobilities by as much as 40%. These impurities and/or defects can be gettered at the surfaces of the InP by heat treatment and then removed by polishing. The GalnAs epitaxial layers grown on the heat-treated substrates have significantly improved electrical properties. Hall and SIMS measurements indicate that both donors and acceptors outdiffuse into the epitaxial layers during growth resulting in heavily compensated layers with reduced mobilities. The dominant donor species was identified by SIMS as Si, and the dominant acceptors as Fe, Cr and Mn.     

SiO_2膜增强InGaAsP超晶格外延片的量子阱混合

对晶格与 In P匹配的 In Ga As P超晶格结构外延片 ,运用等离子增强化学气相沉积法镀Si O2 膜 ,随后用碘钨灯快速热退火 ,进行无杂质空位扩散 ( IFVD)技术的实验研究 ,测量光致发光谱后得到了最大 50 nm的峰值位置蓝移 ;表明在没有掺杂和没有应变的情况下 ,IFVD仍有较好的处理量子阱材料的能力 .对影响 IFVD工艺的重复性因素进行了探讨 .     

粘亚麻氨纶弹力织物的去麻皮漂白工艺探讨

对粘亚麻氨纶弹力织物的漂白工艺进行了探讨,分析了漂白剂浓度、pH值、温度、时间和H2O2复漂工艺等条件对织物漂白效果的影响,比较了不同漂白工艺织物的白度、去麻皮情况、强力等性能。结果表明NaClO-氧漂和Na-ClO-DCCA-氧漂工艺对织物白度及麻皮去除效果相当,但前者的织物弹性较后者的好,强力损伤却较后者的大。     

量子尺寸效应对InGaN/GaN量子点中的类氢杂质态的影响

在有效质量近似下,运用变分法研究了量子尺寸效应对闪锌矿InGaN/GaN量子点中类氢杂质的施主束缚能的影响.数值结果显示,类氢杂质的施主束缚能在很大程度上依赖于杂质位置和量子点结构参数,当杂质位于量子点中心时,施主束缚能最大;当量子点尺寸增加时,位于该量子点任一位置处的杂质束缚能均降低.     

仿真人造毛皮生产技术研究

以腈纶、氯纶和涤纶等化学纤维为原料,依据纤维特性,分别采用德国、日本及英国的先进设备,开发了平剪绒、仿羊羔绒毛皮、提花毛皮、仿绵羊绒霜花毛皮、提花沾尖长绒毛皮产品.研究了相关生产工艺路线及参数、设备及原料配比,并对产品进行了抗静电整理和柔软增光整理,与天然毛皮相比,具有手感滑爽、轻便柔软、色泽鲜艳、耐磨耐洗、视觉逼真的效果.产品可用于服装面料、衬里、壁毯、鞋帽和各种皮毛玩具和产业用布等,比天然毛皮的用途更为广泛.