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91.
Ramirez Juan R.; Crano William D.; Quist Ryan; Burgoon Michael; Alvaro Eusebio M.; Grandpre Joseph 《Canadian Metallurgical Quarterly》2004,18(1):3
The authors investigated relationships between marijuana and inhalant use and several cultural and demographic factors in Anglo American and Hispanic American adolescents (N=1,094). Outcome measures assessed lifetime and 30-day marijuana and inhalant use. Predictors and covariates used in logistic regression analyses were region, grade, gender, knowledge, acculturation, familism, and parental monitoring. Hispanic Americans exhibited higher usage across all measures. In this group, high acculturation was associated with low marijuana, but high inhalant, use. Across all participants, positive family relations and parental monitoring were strongly associated with attenuated marijuana use hut only among those most knowledgeable about drugs. Familism and monitoring were not associated with diminished usage among the less knowledgeable. For inhalants, monitoring combined with high knowledge or high familism was associated with diminished usage. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
92.
93.
海洋是个特殊的环境,为许多光纤传感器提供了一个极好的应用领域。对于海洋这个特殊的“敌对”环境,光纤传感器将面临许多挑战。 本文着重介绍应用于海水温度、浊度、盐份浓度、浮游生物和溶解物光吸收量以及环境湿度等海洋环境参数监测的光纤传感器的原理、结构和特性,展望光纤传感器在海洋环境监测方面的美好前景。 相似文献
94.
We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique.
This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning
steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations
between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced
by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential
in order to achieve good pattern definition. 相似文献
95.
P. Kurpas A. Oster M. Weyers A. Rumberg K. Knorr W. Richter 《Journal of Electronic Materials》1997,26(10):1159-1163
Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy.
The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH3 over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution
x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy
of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V
heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring. 相似文献
96.
通过对几座典型水库大坝原型观测设施的分析论证,总结了土坝测压管观测设备分析论证的步骤和方法,从观测设施的考证及全面性、合理性、可靠性等方面进行分析,以确定各测压管的可操作性,从而为观测资料的准确性以及整编分析提供可靠的保证。 相似文献
97.
98.
Determining contributions of source-monitoring and inhibitory function to age-related forgetting has been an elusive goal for cognitive theorists. Five studies used a verbal working memory paradigm to examine mechanisms accounting for disproportionate retroactive interference (RI) experienced with adult aging. Participants distinguished studied target-word pairs from interfering pairs that were read aloud. Source-monitoring and inhibitory task components varied through manipulations of response requirements. RI effects were primarily due to source-monitoring failures rather than to inhibitory failures. Removing both source and inhibitory components eliminated age differences in RI. When source monitoring was emphasized, RI continued to be observed in all age groups but disproportionately for older adults. Process dissociation analyses of memory found recollection decreases and familiarity increases consistent with source failures. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
99.
M. Sanganeria D. T. Grider M. C. öztürk J. J. Wortman 《Journal of Electronic Materials》1992,21(1):61-64
In-situ doped polycrystalline SixGe1-x
(x = 0.7) alloys were deposited by rapid thermal chemical vapor deposition (RTCVD) using the reactive gases SiH2Cl2, GeH4 and B2H6 in a H2 carrier gas. The depositions were performed at a total pressure of 4.0 Torr and at temperatures 600° C, 650° C and 700° C
and different B2H6 flow rates. The conditions were chosen to achieve high doping levels in the deposited films. Our results indicate negligible
effect of B2H6 flow on the deposition rate. The depositions follow an Arrhenius type behavior with an activation energy of 25 kcal/mole.
Boron incorporation in the films was found to follow a simple kinetic model with higher boron levels at lower deposition rates
and higher B2H6 flow rates. As-deposited resistivities as low as 2 mΩ-cm were obtained. Rapid thermal annealing (RTA) in the temperature
range 800-1000° C was found to reduce the resistivity only marginally due to the high levels of boron activation achieved
during the deposition process. The results indicate that polycrystalline SixGe1-x films can be deposited by RTCVD with resistivities comparable to those reported for in-situ doped polysilicon. 相似文献
100.