The intervalley X6→Γ6, L6 scattering time in GaAs measured by ultrafast pump-probe infrared absorption spectroscopy

A direct measurement of the dynamics of electrons in the X₆ valley for a GaAs crystal by time-resolved absorption spectroscopy is reported for the first time. IR picosecond probe pulses were used to monitor the growth and decay of the population in the X₆ valley subsequent to excitation by a 527 nm pump pulse. The intervalley X₆→Γ₆, L₆ scattering time t_x of 0.70 ± 0.50 ps is determined and the crossection for the X₆→X₇ transition is estimated to be 1.8 × 10⁻¹⁶ cm².     

虚拟红外成像器件的模拟输出电路设计

虚拟红外成像器件是能输出红外图像数据源的器件,在调试图像采集系统的硬件和软件时能替代非制冷红外焦平面阵列。虚拟成像器件的输出具有很好的线性度和精度,可作为图像采集电路的标定器件。文设计了虚拟红外成像器件的模拟输出电路,根据UL03401性能参数,设计了信号调理电路,通过在FPGA上使用ROM中查表方式校正模拟端口输出误差,在实际应用中表现了良好的精确性。     

多站虚拟量测变换均值无源定位算法

在多站无源均值定位算法中,为了解决部分传感器间夹角过大或过小所导致的定位精度下降问题,提出一种基于虚拟量测变换的多传感器管理无源定位算法.首先在全局坐标系下分析了传感器间夹角对误差几何稀释度(GDOP)的影响,进而得到双站获得较好定位精度的夹角约束关系;其次针对不满足该约束关系的传感器组合提出一种虚拟量测变换定位算法,通过空间管理的方法达到对传感器的优化布站,并结合算法的实施步骤对其原理及特点进行了理论分析,尤其对变换前后的交点精度进行了比较.仿真结果表明虚拟量测算法的定位精度要明显优于均值算法,进而说明该算法的有效性及传感器管理在多站无源定位中的重要作用.     

视觉测量中多光学靶点亮度自适应控制

提出了一种面向大视场高精度视觉测量的多红外目标靶点（红外LED）亮度自适应控制方法。以微控制器PIC16F873A和LED驱动芯片MAX6964作为核心器件,设计了可满足大空间范围内靶点亮度控制需求的多目标靶点控制驱动器。为了使LED在近距测量时的调节精度和远近距离测量时的发光亮度都能满足要求,根据MAX6964输出特点设计了PWM信号输出电路,并采用推挽电路驱动LED。实验证明,目标靶点在CCD相机上成像光斑稳定一致。     

漫射红外技术的智能家居无线局域网设计

分析了红外技术在短距离无线通信中的优势,并将其应用在智能家居局域网中;结合安华高科技公司的HSDL-3020红外收发模块搭建了硬件电路,构成网络的主从节点;介绍了网络组建的过程,包括IrDA协议栈结构、数据编码格式、链路连接、网络管理机制等。本设计实现了对家居设备的统一管理,具有较高的应用价值。     

基于被动测量的高速网络管理系统

文章介绍了,面向大规模宽带IP网络的运维和管理需求,以大规模网络流量测量和知识挖掘为基础,研究基于分布式流量测量的新一代宽带网络管理架构,采用网络被动模式测量和主动采集技术手段,实现对高速网络的性能、状态和行为的管理,并对网络测量技术的发展及现状、系统的架构、关键技术和应用情况作了详细阐述,明确下一步研究工作的目标。     

Photovoltaic effect and carrier transport mechanisms in Hg1-Mnxtdiodes

Hg_1-xMn_xTe semiconducting semimagnetic alloy has been examined in the context of its possible applications in infrared detectors. For analysis of detector properties the intrinsic carrier concentration has been calculated as a function of temperature and crystal composition. The starting material was In-doped Hg_1-xMn_xTe grown by the modified Bridgman method. The as-grown crystals with manganese content of 12-19% were p-type with carrier concentration and mobility of 100 cm²/ Vs at 77 K. An-type layer was formed on the surface by the annealing process in saturated Hg-vapour at 270-320° for 2 hrs. Capacitance-voltage curves have C^-3 dependence on applied voltage indicating that the junction is linearly graded. From standard electrical measurements and spectral characteristics the main detector parameters were determined and compared to those of Hg_1-xCd_xTe devices. The influence of material properties on detector parameters was analyzed. In order to estimate the carrier transport mechanisms, differential resistivities and current-voltage curves were measured over a wide range of temperaturesi.e. 25 to 300 K. From the temperature dependence of the R₀A product, it was established that at high temperatures (150-300 K) the carrier transport is dominated by a recombination-generation mechanism. In low temperature region the excess current at forward bias is probably attributed to carrier tunneling via energy states distributed randomly within the forbidden gap. At reverse bias the leakage surface or volume currents dominate in the carrier transport.     

FORMATION OF MANGANESE SILICIDE THIN FILMS BY SOLID PHASE REACTION

1. IntroductionThe transition metal silicides have attraeted much attention because of their potentialapplicatiOIl in very large scale integration (VLSI) de.ice[1]. Near-noble metal silicides canbe used as Schottky al1d ohn1ic col1tacts in silicon-based d…     

The Structure of the Irreversibly Bound Adhesion Promoter-Substrate Interfacial Layer of γ-Aminopropylsilanetriol on Crystalline Si, as Measured by XPS and FTIR

The irreversibly bound interfacial layer deposited by the γ-aminopropysilanetriol adhesion promoter onto a crystalline silicon substrate, which remains even after profuse washing, was found by XPS to have resulted from the fragmentation and rearrangement of the original γ-aminopropylsilanetriol molecule. A mechanism is proposed, involving the homolytic scission of the terminal N-C bond. One of the subsequent reactions is believed to involve hydrogen loss by abstraction and the formation of a terminal vinyl group, which bonds to the substrate. Support for this mechanism is found in IR spectroscopy of this layer.     

Zinc Coated Steel/Epoxy Adhesive Systems: Investigation of the Interfacial Zone by FTIR Spectroscopy

The present study takes advantage of the ability of Fourier Transform Infrared Spectroscopy (FTIR) for the analysis of ultrathin organic films on metals. FTIR in the reflection mode (IRRAS) is used in order to study the interaction of ultrathin films of dicyandiamide (hardener of most one-pack epoxy resins) with various substrates, model ones such as gold or zinc and industrial ones such as steel and zinc-coated steels.

Pure zinc surfaces and, to a lesser extent, zinc-coated steels are shown to react with dicyandiamide after heating at 180°C, as evidenced by the frequency shift of the absorption band (at about 2200 cm^-1) characteristic for nitrile groups. As real systems consist of thick layers of a fully formulated adhesive cured onto a metallic substrate, the direct investigation of such a buried interphase is no longer possible by FTIR and by most of the known spectroscopies. Some mechanically tested specimens are then analysed, after failure, by FTIR microspectrometry. The spectra obtained, corresponding to the fracture initiation zone which is about 100 μm in diameter, advocate for the presence of an ultrathin layer of modified polymer still covering the substrate.