注氢硅中微结构缺陷的TEM观察

通过透射电子显微镜观察到注氢硅片中存在损伤带，损伤带的位置和注人氢的分布几乎一致，推断损伤带是由于氢的注入引起的。损伤带内主要以平行于正表面的{111}面状缺陷为主，另外还有斜交于正表面的{111}面状缺陷以及{100}面状缺陷，这是由于氢朝能量低的位置的迁移聚集而形成的。在损伤带的中间还可见到晶格紊乱团块和空洞，这是由于损伤带中间存在高浓度的氢和高密度的面状缺陷面导致形成的。     

Nonlinear electrical transport in K-TCNQ at low temperatures

A remarkable nonlinearity has been observed for electric transport in K-TCNQ (potassium tetracyanoquinodimethane) quasi-one-dimensional conductor. The negative differential resistance region appears afterV _m (turn over voltage), beyond which voltage goes down with increase of current. A possible mechanism is discussed in terms of dynamics of charged solitons and domain walls in one-dimensional molecular stacks of these types of crystals.     

Catalytic oxidation of sulphide ions to elementary sulphur in aqueous solutions over transition metal oxides

The catalytic activity of a wide range of transition metal oxides in oxidation of sulphide ions by air in aqueous medium was studied. Some specific features of the reaction mechanism on some of the studied oxides were considered. The transition metal oxides are promising catalysts for practical application. Some of these oxides will allow the preparation of catalysts possessing activity comparable to that of the cobalt phthalocyanine based catalysts, popular in industrial practice.     

离子注入对Cr12MoV钢表面组织结构和力学性能的影响

研究了Ｃｒ１２ＭｏＶ钢离子注入层的显微组织特征及其对表面性能的影响。结果表明，离子注入使Ｃｒ１２ＭｏＶ钢的表面硬度和耐磨性能得到显著改善，且存在着一个最佳的注入剂量，约为３×１０＾１＾７Ｎ＾＋／ｃｍ＾２左右。离了注入在Ｃｒ１２ＭｏＶ钢表面层中形成了大量细小弥散的第二相粒子，并使α－Ｆｅ晶格发生严重畸变，从而引起材料表面强化。     

飞行时间二次离子质谱--强有力的表面、界面和薄膜分析手段

二次离子质谱（Secondary ion mass spectrometry，简称SIMS）是一种对表面灵敏的质谱技术，建立在表面各种类型带正、负电荷原子或分子发射的基础上。用飞行时间（Time of flight，简称TOF）仪器对这些二次离子进行质量分析，能确保并行质量登录、高质量范围、高流通率下的高分辨和精确质量测定这些优异性能。配合细聚焦扫描一次离子束，可在优于1nm的高深度分辨和优于50nm的横向分辨本领下，实现对表面优于单层ppm(百万分之一）量级的极高检测灵敏度。当今TOF－SIMS已发展为一种成熟且完善的表面分析技术。极高的灵敏度，再加上即使对大分子及不易挥发性分子都独具的敏感性，使它成为很多高技术领域不可缺少的分析手段，这些领域包括微电子学、化学和材料科学以至纳米技术和生命科学等。本文简述了TOF－SIMS的原理、仪器及其多方面的应用和展望。     

锂离子电池正极材料锂锰氧化物的固相合成研究进展

阐述了固相合成反应的原理，综述了锂锰氧化物的几种固相合成方法，并着重介绍了熔融渍法，多步加热法，机械化学法和微波化学法等在锂锰氧化物合成中的研究进展。     

Secondary ion emission from Ti and Si targets induced by medium energy Ar ion bombardment - Experiment and computer simulation

The paper presents experimental results of secondary ion energy distributions obtained for Ti and Si targets bombarded by 20-30 keV monoisotope Ar⁺ ion beam. The influence of the extraction voltages between target and a slit of the electrostatic energy analyzer entrance on the energy distributions of secondary ions was investigated. After optimization of the secondary ion extraction system, the mass spectra of secondary ions were also measured. The investigations were done using recently built experimental system. Experimental data are compared with the computer simulation results obtained using TRQR and SATVAL codes.     

钼酸铵溶液深度净化工艺探索

对传统的钼酸铵溶液净化工艺及文献介绍工艺进行了较为详细的分析 ,并与实验数据对比分析 ,找到了较为合理的工艺方案     

稀土元素的分离技术

对目前稀土元素分离过程中几种常用的分离技术进行了综述，使用得较多的仍然是溶剂萃取法和离子交换法，而且新方法也在不断地出现。     

退火损伤对Er注入GaAs和Yb注入InP发光的影响

本文报道了CaAs∶Er、InP∶Yb发光样品的二次离子质谱、X-射线双晶衍射测量结果及其与Er离子的表面成份的关系.分析讨论了退火损伤对GaAs∶Er和InP∶Yb发光的影响以及Er~(3+)复合体发光中心模型.