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41.
Analysis of damage localization for ductile metal in process of shear band propagation 总被引:3,自引:0,他引:3
王学滨 《中国有色金属学会会刊》2006,16(1):153-158
1 Introduction Shear localization is an important and often dominating deformation and failure mechanism for Ti and Ti alloy in dynamic loadings[1—10]. The eventual outcome of localized deformation is ductile rupture and material separation. Shear locali… 相似文献
42.
基于高速局域网的连续搅拌反应釜(CSTR)控制系统 总被引:1,自引:0,他引:1
提出基于客户-服务器模式的连续搅拌反应釜(CSTR)控制系统。系统充分利用网络设备和技术,扩大了实时控制设备的应用范围和资源利用率,方便了学生学习和巩固基本的控制理论和技术。本系统可提供的操作(控制策略)有PID控制和鲁棒控制,同时还提供传输可执行文件和反馈执行结果的功能,以便测试实验者自行编写的算法程序。 相似文献
43.
Computing scattering rates of electrons and phonons stands at the core of studies of electron transport properties. In the high field regime, the interactions between all electron bands with all phonon bands need to be considered. This full band interaction implies a huge computational burden in calculating scattering rates. In this study, a new accelerated algorithm is presented for this task, which speeds up the computation by two orders of magnitude (100 times) and dramatically simplifies the coding. At the same time, it visually demonstrates the physical process of scattering more clearly. 相似文献
44.
45.
Dilip Chandra Ghimire Sudip Adhikari Hideo Uchida Masayoshi Umeno 《Diamond and Related Materials》2006,15(11-12):1792
We report the effects of gas composition pressure (GCP) on the optical, structural and electrical properties of thin amorphous carbon (a-C) films grown on p-type silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (MW SWP CVD). The films, deposited at various GCPs ranging from 50 to 110 Pa, were studied by UV/VIS/NIR spectroscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and current–voltage characteristics. The optical band gap of the a-C film was tailored to a relatively high range, 2.3–2.6 eV by manipulating GCPs from 50 to 110 Pa. Also, spin density strongly depended on the band gap of the a-C films. Raman spectra showed qualitative structured changes due to sp3/sp2 carbon bonding network. The surfaces of the films are found to be very smooth and uniform (RMS roughness < 0.5 nm). The photovoltaic measurements under light illumination (AM 1.5, 100 mW/cm2) show that short-circuit current density, open-circuit voltage, fill factor and photo-conversion efficiency of the film deposited at 50 Pa were 6.4 μA/cm2, 126 mV, 0.164 and 1.4 × 10− 4% respectively. 相似文献
46.
Eiichi Hoshino Kazunari Maruta Yasunao Wada Kazuo Mori 《Journal of the American Oil Chemists' Society》1995,72(7):785-791
The interaction of highly purified alkaline protease fromBacillus sp. KSM-K16 with the horny cells of human skin contained in skin grime was directly visualized by electron microscopy. It
became clear that the protease first penetrates the horny cells and then adsorbs, mainly onto the internal structure of the
cells at the initial stage of hydrolysis, and directly hydrolyzes the keratin filaments, though the marginal band surrounding
them retains its original shape. Then, hydrolysate produced from the keratin filaments flows out of the cell, and early in
the hydrolysis process keratin filaments decrease and then disappear, leaving a marginal band, i.e., the cell turns to a hollow
state. As a result, the remaining marginal band loses support from inside the cell, thus promoting cleavage and dispersion.
Until this stage in the protease reaction, the remarkable liberation of hydrolysis products as water-soluble protein does
not occur. 相似文献
47.
Sudip Adhikari Sunil Adhikary Ashraf M.M. Omer Mohamad Rusop Hideo Uchida Tetsuo Soga Masayoshi Umeno 《Diamond and Related Materials》2005,14(11-12):1824
Nitrogenated diamond-like (DLC:N) carbon thin films have been deposited by microwave surface wave plasma chemical vapor deposition on silicon and quartz substrates, using argon gas, camphor dissolved in ethyl alcohol composition and nitrogen as plasma source. The deposited DLC:N films were characterized for their chemical, optical, structural and electrical properties through X-ray photoelectron spectroscopy, UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current–voltage characteristics. Optical band gap decreased (2.7 to 2.4 eV) with increasing Ar gas flow rate. The photovoltaic measurements of DLC:N / p-Si structure show that the open-circuit voltage (Voc) of 168.8 mV and a short-circuit current density (Jsc) of 8.4 μA/cm2 under light illumination (AM 1.5 100 mW/cm2). The energy conversion efficiency and fill factor were found to be 3.4 × 10− 4% and 0.238 respectively. 相似文献
48.
An extremely simple and compact planar monopole ultrawideband (UWB) slot antenna with dual band‐notched characteristics is proposed. The antenna is composed of a circular radiation patch, a microstrip‐fed line, and a partial ground. By etching an arc‐shaped slot on the radiation patch and a C‐like slot on the feed line, dual notched frequency bands at 3.3–3.7 GHz for WiMAX and 5.15–5.825 GHz for WLAN are achieved. And, the two notched bands can be adjusted independently by varying the length of the slots. Moreover, the band‐notched characteristics can be reconfigurable by shorting the corresponding slots. So, the antenna is capable of operating in one of multiple modes which makes it an excellent candidate for UWB applications. Meanwhile, experimental results indicate that the antenna has an available impendence bandwidth from 2.9 to 11 GHz which covers the UWB frequency band, and nearly omnidirectional patterns, stable gains, small group delay in operating band except rejected bands. © 2014 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:706–712, 2014. 相似文献
49.
Haixia Xiang Cuiping Yu Jinchun Gao Shulan Li Yongle Wu Ming Su Yuanan Liu 《国际射频与微波计算机辅助工程杂志》2014,24(3):401-411
This article introduces the concurrent dual‐band digital predistortion (DPD) architecture with only one upconvertion unit, which is suitable for the linearization of wideband power amplifiers (PAs) excited by concurrent dual‐band signals. By extending the conventional dynamic deviation reduction (DDR) model to the concurrent dual‐band mode, we propose two DDR‐based concurrent dual‐band models, the dual‐band DDR (DB‐DDR) model and the simplified dual‐band DDR (SDB‐DDR) model. The performance of these two models is experimentally assessed with two types of wideband PAs (a GaN Class F PA and a GaN Doherty PA) driven by the concurrent dual‐band signal, and compared with the prior two‐dimensional digital predistortion (2D‐DPD) model and the two‐dimensional modified memory polynomial (2D‐MMP) model. The results prove the good DPD performance and low computational complexity of the proposed models. © 2013 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:401–411, 2014. 相似文献
50.
This article discusses a technique based on combination of multimode resonators (MMR) and complementary split ring resonators (CSRR) to design multi notch‐bands ultra wide‐band (UWB) band‐pass filters (BPF). The proposed structure consists of two parallel multimode resonators, resulting in a dual notch‐band UWB BPF, integrated with a single cell of CSRR to realize the third notch‐band. The mechanism of realizing the notch‐bands is mathematically presented and a triple notch‐bands UWB BPF is designed, simulated and fabricated. The overall size of the proposed filter is reported to be around 36 × 7.7 mm2 where a size reduction of around 35% is demonstrated in comparison to the conventional filter. © 2013 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:375–381, 2014. 相似文献