THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

An experiential account of phantom vibration syndrome

A small handful of recent studies have addressed a phenomenon known as “phantom vibration syndrome”. This refers to when phone users perceive their device to vibrate, indicating that a call or text is incoming, when in fact the phone did not vibrate at all. Though these studies show that most users do not find phantom vibration hallucinations to be very bothersome, they also find that a large majority of users experience this phenomenon. This paper explores what the striking prevalence of phantom vibration syndrome means for our contemporary relationships with technology. I begin with a review of the theories purporting to explain these data, which largely rely on particular understandings of the brain. Next I develop an alternative theory of phantom vibration syndrome based on insights from the philosophical tradition of phenomenology. This account considers the ways users develop bodily and perceptual habits regarding how the phone is understood and used. By critically contrasting these different theories, we can refine our questions about what the high prevalence of phantom vibration syndrome implies about our contemporary technological situation.     

田赛距离测量中全站仪的设计与实现

本文提出了将智能全站仪这种精密测量仪器广泛应用于田赛项目测量中，并结合其他科技元素用于解决田赛项目中跳远、投掷等项目的测量及数据管理问题，实现实时、自动、准确地裁定和报告比赛成绩。     

Control of the particle microstructure during the synthesis of bulk-polymerized transparent methacrylate-acrylonitrile-butadiene-styrene resin

A series of methacrylate-acrylonitrile-butadiene-styrene (MABS) resins was prepared using bulk polymerization. The polarity of the continuous phase and the compatibility of two phases were changed by adjusting the methyl methacrylate (MMA) content, choosing values that were close to styrene-butadiene rubber solubility value. The possibility of controlling the microstructure of the MABS resin by changing the polarity of the components and the compatibility of two phases was assessed. The dynamic mechanical analysis shows that the compatibility of two phases varies with the MMA content. The morphological analysis shows that increasing MMA contents results in a gradual decrease in the sub-inclusion structure with a network skeleton of rubber particles, and that all the particles become solid rubber when the MMA content reaches 75%. The sub-inclusion structure reappears but does not have a network skeleton when the MMA content is 90%. The impact strength and morphological analysis indicate that the solid rubber particles and the sub-inclusion structure with a network skeleton provide excellent toughness, while the sub-inclusion structure without a network skeleton does not. In contrast, the transmittance of the ABS resin first increased and then decreased with increasing MMA content.     

Sensor network design based on system-wide reliability criteria. Part I: Objectives

Reliability based criteria are quite popular for optimal sensor network design. We present a modified definition of system reliability for sensor network design for two applications: reliable estimation of variables in a steady state linear flow process, and reliable fault detection and diagnosis for any process. Unlike the weakest-link based definition of system reliability in the literature, the proposed definition considers the entire system and is consistent with the reliability concept used in classical reliability literature. For each application, dual approaches for defining system reliability are proposed, and their analogy with the reliability problem in the classical reliability literature is established. Using examples and stochastic simulations, the advantage of using the proposed system reliability in contrast to the existing definition is illustrated. Part II of this series of articles presents methods for efficient generation of the system reliability function and its use in optimization-based approaches for designing optimal sensor networks.     

基于滑模的运载器主动段俯仰通道姿控系统设计

与传统比例-积分-微分（PID）控制方法相比，滑模控制（SMC）方法可以比较容易地将不确定性纳入控制器设计中，从而增强系统的鲁棒性。探索了SMC技术在运载器主动段姿态控制中的工程应用，首先通过分析基于趋近律的SMC系统，提出了降低不连续切换项系数的需求，然后研究了基于干扰上界的SMC方法。三通道小偏差仿真结果验证了两种方法的控制效果，表明第2种控制器的鲁棒性更好，稳态误差小，同时发动机喷管摆角需求较小。     

大口径光学元件装夹转运结构设计及分析

为了实现大口径光学元件的安全装夹、转运,通过光学元件开槽与不开槽两种装夹方式的分析,得出开槽夹紧转运方式将带来微裂纹、应力集中、成本高等缺陷,提出了利用摩擦力克服光学零件的重力和惯性力的低应力装夹转运方案。通过对光学元件低应力夹紧结构设计,并利用有限元分析方法,得到不开槽装夹方式下,光学元件的最大主应力为1.11 MPa,最大切应力为0.73 MPa,远低于光学元件破坏的强度极限,且受力均匀,无应力集中现象。     

泛在电力物联网在北京经济技术开发区的应用探索

泛在电力物联网是物联网在电力领域的具体体现，建设泛在电力物联网是推进"三型两网"建设的关键环节，也是实现能源转型的必要手段。阐述了泛在电力物联网的定义，从供电公司角度出发，根据北京经济技术开发区实际情况，讨论了依托地区特点的泛在电力物联网实施策略和实际应用场景，分析了可能遇到的问题。得出结论：随着泛在电力物联网的深入建设，供电公司能够为电力客户提供多元化服务，提高客户满意度；地市供电公司能够依托泛在电力物联网开展更多电力相关业务；泛在电力物联网的安全性、实用性、有效性是发展面临的首要问题。