底部两层框架-抗震墙砖房抗震能力的分析方法与设计控制

提出了底部两层框架 -抗震墙砖房框剪层和砖混层的极限受剪承载力、侧移刚度、极限剪力系数计算公式 ,并基于设置不同数量抗震墙的底部两层框架 -抗震墙砖房的实例计算和弹塑性时程分析 ,给出了结构砖混过渡层与相邻框剪层的极限剪力系数比和侧移刚度比的合理取值及薄弱楼层位置判别和破坏状态评定的方法和原则。     

大功率晶体管的保护电路

大功率晶体管调速系统中作为开关元件使用时，共优点是开关频率比可控硅的高，但是不注意保护就容易损坏。着重研究过电流故障，并对保护作用的影响进行了分析，进而提出了防止过电流的方法和工作原理。     

浅谈低频小功率三极管的输入电阻的计算

就低频小功率三极管的输入电阻的计算进行了探讨。     

铁路桥梁横向振动模拟及适应快速行车结构型式的研究

针对铁路提速后出现的上承式简支钢板梁桥跨中横向振幅过大的问题,以羊楼司桥(L=32m单跨上承式简支钢板梁桥)为例进行实桥检测和数值模拟,建立车辆、线路、桥梁三者的联合模型,考虑轮轨接触力,应用MSC/DYTRAN大型结构分析程序进行车线桥动力相互作用的仿真分析。研究揭示我国用量最多的C62型货车以70∽80km/h的速度空载通过时,该跨度的钢板梁桥发生横向谐振的机理。此外,用该方法对32m跨长的组合梁结构进行桥梁动力特性及列车走行性分析,表明该结构满足提速货车和高速电动旅客列车走行的要求。研究结果对我国高速铁路桥梁建设和既有桥梁的改造具有积极意义。     

"What is in a word? No versus Yes differentially engage the lateral orbitofrontal cortex": Correction.

Reports an error in "What is in a word? No versus Yes differentially engage the lateral orbitofrontal cortex" by Nelly Alia-Klein, Rita Z. Goldstein, Dardo Tomasi, Lei Zhang, Stephanie Fagin-Jones, Frank Telang, Gene-Jack Wang, Joanna S. Fowler and Nora D. Volkow (Emotion, 2007[Aug], Vol 7[3], 649-659). The supplemental materials link should appear as follows: http://dx.doi.org/10.1037/1528-3542.7.3.649.supp. (The following abstract of the original article appeared in record 2007-11660-018.) The words "No" and "Yes" are involved in conditioning to prohibit or encourage behavior, respectively. The authors, therefore, hypothesized that these words would be attributed to endogenous valence, activating neuronal circuits involved with valence and emotional control. Functional MRI (fMRI) at 4 Tesla was used to record regional brain activity while participants were exposed to emphatic vocalizations of the words. Results showed that No and Yes were associated with opposite brain-behavior responses; while No was negatively valenced, produced slower response times, and evoked a negative signal in the right lateral orbitofrontal cortex (OFC), Yes was positively valenced, produced faster response times, and evoked a positive signal in a contiguous region of the OFC. Attribution of negative valence to No and trait anger control were associated with increased responsivity of the OFC to No. Inasmuch as sensitivity to the prohibitive command No develops during childhood through interaction with primary caregivers as the first social objects, our findings may implicate the lateral OFC in the neurobiology of emotion regulation and subsequent social development. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

大功率开关电源的设计与实现

介绍了开关电源设计中需要考虑的几个基本问题,包括频率的确定、最大占孔比Dm的确定、逆变变压器的设计和开关功率管的选择,并以一种1 kW的PWM大功率半桥式开关电源为例,详细介绍实际的开关电源设计方案,并给出了实验结果.     

The influence of dependence of HEMT’s model parameters on gate and drain voltages on upper boundary of LNA’s linearity

On the basis of numerical model the parameters of high electron mobility transistors (HEMT’s) as a function of gate and drain voltages are obtained. The simulation of nonlinear properties of low noise amplifier cascade with HEMT for various modes of its operation has shown that the account of its dependence simultaneously on both the voltages allows to approach the results of calculation to experimental data.     

STI process steps for sub-quarter micron CMOS

This paper presents Shallow Trench Isolation (STI) process steps for sub-1/4 μ CMOS technologies. Dummy active areas, vertical trench sidewalls, excellent gap filling, counter mask etch step and CMP end point detection, have been used for a 0.18 μm CMOS technology. Electrical results obtained with a 5.5 nm gate oxide thickness show good isolation down to 0.3 μm spacing. Good transistor performances have been demonstrated.     

CMOS电路中抗Latch-up的保护环结构研究

闩锁是CMOS集成电路中的一种寄生效应,这种PNPN结构一旦被触发,从电源到地会产生大电流,导致整个芯片的失效。针对芯片在实际测试中发现的闩锁问题,介绍了闩锁的测试方法,并且利用软件Tsuprem4和Medici模拟整个失效过程,在对2类保护环(多子环/少子环)作用的分析,以及各种保护结构的模拟基础之上,通过对比触发电压和电流,得到一种最优的抗Latch up版图设计方法,通过进一步的流片、测试,解决了芯片中的闩锁失效问题,验证了这种结构的有效性。     

小高层剪力墙结构开洞设计探讨

小高层建筑需通过剪力墙开洞(结构开洞)降低侧向刚度,本文对开洞部位以及墙肢和连梁设计提出一些看法,供设计人员参考。