Azomesogens with 1,2,4-trisubstituted benzene moiety

New mesogenic homologous series having an azo central linkage was synthesized by fixing a rigid 4-methyl phenyl azo group to resorcinol moiety. The terminal and lateral phenolic -OH groups were esterified, one by one, with 4-n-alkoxybenzoyl and acetyl group, respectively. All the twelve homologues synthesized exhibit mesomorphism. The methoxy ton-decyloxy andn-hexadecyloxy derivatives exhibit monotropic nematic mesophase whereas,n-dodecyloxy andn-tetradecyloxy derivatives exhibit enantiotropic nematic mesophase. The mesogenic properties of the present series was compared with those of other structurally related mesogenic series. Paper presented at the 5th National Seminar on Liquid Crystals, University of Jammu, Jammu, December 1997.     

Mixed formulation of nonlinear beam on foundation elements

This paper presents an inelastic element for the analysis of beams on foundations. The element is derived from a two-field mixed formulation with independent approximation of forces and displacements. The state determination algorithm for the implementation of the element in a general purpose nonlinear finite element analysis program is presented and its stability characteristics are discussed. Numerical studies are performed to compare the model with the classical displacement formulation. The studies confirm the superiority of the proposed model in describing the inelastic behavior of beams on foundations.     

一种新的HEMT小信号模型参数提取方法

介绍了一种高电子迁移率晶体管(HEMT)的小信号参数提取方法——综合多偏置点优化参数提取法。该文首先推导并提出了器件的模型、确定外部参数和内部参数，其次介绍了多偏置点优化算法。最后，以PHEMT器件为例进行鲁棒性和精确性测试，实验采用一系列随机起始值，结果表明，提取的参数值与经验值相差小于1％。     

L波段窄脉宽500W固态功放组件的设计

介绍了作者研制的应用于固态雷达发射机上的L波段500W固态功放组件的工作原理、用途及其主要技术指标。描述了功放组件的设计过程和测试结果。该功放组件在窄脉宽条件下实现了快速上升沿,性能优良,工作稳定可靠。     

光电双基区晶体管(PDUBAT)的器件模型

本文在考虑了晶体管的小注入效应和大注入效应以及基区宽变效应等因素后,首次用近似和简化的数学表示式和相应的等效电路,描述了光电双基区晶体管(PDUBAT)负阻形成的机理并使负阻区和谷值区的理论计算和实验结果一致性很好.     

DLL23XA双侧向测井仪的研制

以往双侧向测井仪动态范围小，测量精度低，为此开发了DLL23XA双侧向测井仪。该仪器主要单元采用厚膜电路，稳定性、一致性好；深、浅屏流源采用可变功率控制，提高了仪器的动态范围。仪器采用3506P例进行数据传输，可方便地配接各种地面系统。     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted,as-deposited polycrystalline Si-on-single crystal Si diodes

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.     

MOS功率驱动高速脉冲激光器的研究

运用经典电路理论,对MOS功率管的开关特性、驱动原理进行了分析,导出了应用MOS功率管实现高速大电流开关应遵从的原则和方法,并成功地实现了光脉冲上升时间小于5ns、下降时间小于10ns,驱动电流达10～50AP-P激光器电源的要求.     

对异常高压层厚度划分问题的探讨

通过对喇嘛甸油田800多口聚合物井、更新井的厚度划分及对15口井的异常高压层处理的实例，根据异常高压层在电测曲线上的反映特征，准确地将异常高压层识别出来，并采用本井上下相似层对比法、周围邻井砂体预测分析法、新老标准相结合法等综合分析判断方法，正确地划分异常高压层的厚度，将漏划或少划的厚度补划上。给后续的油层对比、水淹层解释、射孔方案的编制及动态、开发综合方案的调整提供准确的基础数据，并为套管损坏的防治、新钻井的异常高压层厚度解释提供了可借鉴的依据。