脆断事故的原因分析和预防措施

分析高强度材料和大型工程结构元件发生低应力脆性断裂的原因及条件，指出传统强度设计理论的局限性，从设计和工艺上提出防止发生低应力脆断事故的具体措施，给使用高强度材料和设计大型工程结构元件时提供参考。     

HPD-2型非临氢降凝催化剂工艺实验

利用HPD-2型非临氢降凝催化剂进行了中试实验。结果表明：HPD-2型非临氢降凝催化剂相对其他的同类催化剂产品液体收率较高，最高可达95％以上；在反应温度为380℃时，凝点降幅在50℃左右，降凝效果较好；产品性质稳定，具有很好的应用前景。     

管壳式换热器流场三维数值模拟

采用多孔介质方法 ,在PHOENICS 3 3程序的基础上建立了换热器的三维流动计算模型。引入体积穿透率、表面穿透率、分布阻力等来描述换热器内的管束。模型通过计算Halle等[1] 的实验工况来进行验证 ,并尝试用于计算 2 0 0MW低温供热堆主换热器内的流场     

Rheology in Processing of in Situ Composites of Polypropylene and Low Melting Poing Metals

The low melting point metallic tin powder or alloy of tin and lead was blended with polypropy-lene. A kind of in situ composite has been prepared. The variations of torque were studied when the composites were mixed in Haake torque rheogeniometer. By way of capillary extrusion, effects upon rheology of the in situ com-posites of the low melting point metals (LMPM) and coupling agent for their different variety and content, were investigated. From flow curves, the results indicate that in situ composites mixed with the LMPM are a kind of pseudoplastic fluid. If the LMPM were melted, the higher the content of the LMPM , the lower apparent viscosity of composites. Meanwhile, when the coupling agent is added into composites, the viscosity of composite will go up first and drop then. This shows that the LMPM have a promoter flow action on the polypropylene.     

液氨储罐保冷改造效果评定

作者结合实例，论述了氨罐保冷改造的设计、选材及施工，给出了改造后两年的测试结果，并对测试结果进行了分析。     

柴油机针阀体的乙炔低压渗碳

乙炔低压渗碳可以有效地避免在真空渗碳过程中产生炭黑和焦油，同时由于乙炔具有较高的供碳能力，使这一技术尤其适用于针阀体这样的小直径深盲孔零件。     

宽低温STN—LCD加热装置的研制

本文介绍了宽低温ＳＴＮ－ＬＣＤ加热装置的设计和制备方法，并对低温加热的实验结果进行了讨论和分析，相应的研究结果表明此法有利于拓宽ＳＴＮ液晶显示器的负温工作范围。     

Importance of the choice of the profile model for ap-n junction in the location of deep levels

The energy levels introduced by Pt in silicon have been measured in a non-abruptp ⁺-n junction using constant-capacitance thermal-emission rate measurements and a numerical simulation of high frequency-capacitance. Two levels have been detected with activation energies of:E _c -E _T = 0.22 eV with acceptor character andE _T -E _v = 0.34 eV with donor character. The sample preparation and diffusion of Pt is similar to previous works in which an acceptor levelE _c -E _T = 0.34 eV was found instead of or besides a donorlike levelE _T -E _v = 0.34 eV. Our numerical calculation of the shallow-impurity profile points to the existence of a gradual transition near the metallurgical junction for these samples. We have demonstrated that the well-known model of an abrupt junction is not appropriate for these types of junctions, and could lead to errors in the location attributed to the detected levels. Simulation of the electrical behavior leads to the non-existence of the acceptor levelE _c −E _T = 0.34 eV located in then-side of the junction.     

Pyrolysis of tertiarybutylphosphine at low pressure

The pyrolysis of tertiarybutylphosphine (TBP) has been studied in the low pressure conditions used for chemical beam epitaxy (CBE). The pyrolysis studies were carried out in low pressure reactors of two different configurations, one of which is a cracker cell designed for use in a CBE system. The reaction products were studied using a quadrupole mass spectrometer. The products observed are accounted for by a reaction mechanism involving homolysis of the parent TBP molecule to produce PH₂ and C₄H₉ radicals. These undergo subsequent reactions to form the stable products C₄H₈, PH₃ and H₂, with smaller amounts of P and P₂ being produced. The production of the sub-hydride PH₂ using this cracker cell design indicates that the use of partially cracked TBP may be a promising technique for reducing the amount of carbon incorporated into the growing epitaxial layer.     

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted,as-deposited polycrystalline Si-on-single crystal Si diodes

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.