P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.     

高度有序多孔氧化铝模板的制备工艺与生长机制的研究

采用二次氧化法制备出高度有序的多孔氧化铝模板，结合扫描电镜和原子力显微镜对其结构、形貌进行观察和表征。研究了铝箔预处理和温度等对多孔氧化铝模板孔洞有序性的影响，讨论了有序孔洞的自组织生长机理。     

以循环移位控制为基础的相控阵天线快速测量方法研究

为了解决相控阵天线快速测试问题,本文研究了一种相控阵天线测量的新方法。该方法中相控阵天线和测试探头均不动,利用相控阵天线中各移相器的移相状态可循环移位控制的特点和相控阵天线一些已知可信的信息,从而使测量具有极高的效率。文中对一相控阵天线模型采用该测量方法的测量全过程进行模拟,验证了该方法的正确性和高效性。     

冗余磁盘阵列的故障容错分析

本文在介绍冗余磁盘阵列(RAID)的故障容错机理之后,着重研究了设备故障对RAID系统可靠性的影响.其平均持续正常工作时间和系统在线修复设备故障容许的平均间隔时间的计算结果表明,只要在一定的容许时间内替换或修复故障磁盘,系统可保持持续正常工作状态.     

射频激励扩散型冷却阵列波导CO2激光器技术

本文介绍了目前国内外研究者们提出的各种射频激励相干阵列波导ＣＯ２激光器技术，讨论了射频激励相干阵列波导ＣＯ２激光器技术的一个研究方向。     

超声跟踪法制作误差对器件性能的影响及补偿

研究发现快模入射超声跟踪氧化碲器件的布喇格损耗频响对于参数误差十分敏感,因而制作误差可能对器件性能有较大影响。本文系统研究了这种影响及其补偿方法,结果表明,当相邻两换能片之间中心距S有5%的误差和声偏置角丫_0有10%的误差时,通过调整入射角θ_1可作出完全的补偿。     

稀布阵综合脉冲孔径雷达旁瓣对消性能分析

定量分析了阵列孔径、干扰信号带宽、通道幅相误差以及Ａ／Ｄ变换器的量化噪声对大型稀布圆形阵列天线干扰对消效果的影响，介绍了稀布阵综合脉冲孔径雷达（ＳＩＡＲ）采用抽头延迟线以提高干扰对消性能的方法，并给出了数值计算与计算机模拟结果。     

A translator system for the MATLAB language

A whole‐program MATLAB to C translation system is presented. The paper outlines the motivation for the problem, discusses the system's architecture, its features and limitations. The translator's operation is explained using an example input program. Details are given on how the system implements and specializes some of the language's built‐in primitives. Finally, the paper reports measurements evaluating the execution time and memory usage of the translated sources, and the compilation time required for the translations. Copyright © 2006 John Wiley & Sons, Ltd.     

Electrochemical properties of ultra-long,aligned, carbon nanotube array electrode in organic electrolyte

The electrochemical properties of an electrochemical double-layer capacitor electrode based on an ultra-long (500 μm), aligned, carbon nanotube array (ACNTA) in Et₄NPF₆/propylene carbonate electrolyte are examined. The specific capacitance of the ACNTA electrode in an organic electrolyte is 24.5 F g⁻¹, which is larger than that obtained in an aqueous electrolyte. The results of ac impedance measurements show that the ACNTA electrode gives a high power density and an excellent rate capability in an organic electrolyte. It is shown that the ACNTA electrode has a lower equivalent series resistance and a better rate capability than activated carbon electrode. This is due to the fact that ACNTA possesses a larger pore size and a more a regular pore structure. Both these features are conformed by scanning electron microscopic and nitrogen gas adsorption studies.