Some silicon-based heterostructures for optical applications

In this paper, we will present our recent research on the growth and characterization of some Si-based heterostructures for optical and photonic devices. The heterostructures to be discussed are ZnO nanorods on Si, SiO₂, and other substrates such as SiN and sapphire. We will also consider strained Si_1−xGe_x/Si heterostructures for Si optoelectronics. The performance and functionality extension of Si technology for photonic applications due to the development of such heterostructures will be presented. We will focus on the results of structural and optical characterization in relation to device properties. The structural characterization includes x-ray diffraction for assessment of the crystallinity and stress in the films and secondary ion mass spectrometry for chemical analysis. The optical properties and electronic structure were investigated by using photoluminescence. The device application of these thin film structures includes detectors, lasers, and light emitting devices. Some of the Si-based heterostructures to be presented include devices emitting and detecting up to the blue-green and violet wave lengths.     

Nano-Engineered Carbon Fibre-Based Piezoelectric Smart Composites for Energy Harvesting and Self-Powered Sensing

The integration of piezoelectric materials onto carbon fiber (CF) can add energy harvesting and self-power sensing capabilities enabling great potential for “Internet of Things” (IoT) applications in motion tracking, environmental sensing, and personal portable electronics. Herein, a CF-based smart composite is developed by integrating piezoelectric poly(3,4-ethylenedioxythiophene) (PEDOT)/CuSCN-coated ZnO nanorods onto the CF surfaces with no detrimental effect on the mechanical properties of the composite, forming composites using two different polymer matrices: highly flexible polydimethylsiloxane (PDMS) and more rigid epoxy. The PDMS-coated piezoelectric smart composite can serve as an energy harvester and a self-powered sensor for detecting variations in impact acceleration with increasing output voltage from 1.4 to 7.6 V under impact acceleration from 0.1 to 0.4 m s⁻². Using epoxy as the matrix for a CF-reinforced plastic (CFRP) device with sensing and detection functions produces a voltage varying from 0.27 to 3.53 V when impacted at acceleration from 0.1 to 0.4 m s⁻², with a lower output compared to the PDMS-coated device attributed to the greater stiffness of the matrix. Finally, spatially sensitive detection is demonstrated by positioning two piezoelectric structures at different locations, which can identify the location as well as the level of the impacting force from the fabricated device.     

热氧化法制备ZnO纳米棒及其结构表征

在无催化剂条件下,采用热蒸发Zn源,以N2为载气体,在SiO2衬底上反应沉积制备出单晶氧化锌纳米棒。XRD研究表明纳米棒为结晶完好的纤锌矿结构,并且为非定向生长,非定向生长的氧化锌纳米棒减弱了棒之间的屏蔽效应,表现出较好的场发射效果,为未来场发射电子器件的实际应用提供了可靠依据。     

两步法生长ZnO纳米棒的结构及其发光特性

应用两步法在玻璃衬底上制备了高度取向的ZnO纳米棒,并研究了衬底和反应时间等参数对其结构及发光特性的影响。从样品的扫描电镜(SEM)图中发现,利用脉冲激光沉积(PLD)方法在玻璃衬底上生长一层ZnO薄膜作为修饰层,可以明显提高水热法生长的ZnO纳米棒的结晶质量。样品的SEM和光致发光(PL)谱表明,在有ZnO修饰层的玻璃衬底上生长的ZnO纳米棒分布均匀,排列致密,取向性好;缺陷发光的发光强度约是激子发光峰的2倍,且随着反应时间增长,样品的缺陷发光增强而激子发光减弱。     

a-Fe_2O_3纳米棒的制备研究

采用压力–热晶法,制得棒状的前躯体后再在600℃焙烧8 h,成功地制得直径在20~40 nm,长度在300~500 nm之间,均匀分散、疏松多孔的六方结构的棒状Fe2O3纳米粒子,并用透射电子显微镜、电子衍射、X射线衍射等技术手段对样品进行了表征,考察了制备条件对产物粒径、形貌的影响。结果表明:初始铁盐浓度对产物粒径影响不明显,可以在较高初始浓度下制备Fe2O3纳米粒子;pH值、初始压力对粒子形貌和大小有一定的影响。     

Fabrication of quasi-one dimension silicon carbide nanorods prepared by RF sputtering

Anodic aluminum oxide (AAO) template was prepared by a two-step anodization method at low temperature (1 °C) and silicon carbide was deposited on the templates by non-reactive radio frequency sputtering method. Well-aligned quasi-one dimension silicon carbide nanorods with the average diameter about 80-90 nm and a mean length of 400 nm were obtained perpendicular to the substrate and observed by AFM and SEM after the aluminum substrates were striped off. Then some samples were annealing at flowing N₂ at 400, 500 and 600 °C and FTIR was performed on these samples to obtain the information of structure.     

准一维半导体纳米材料的研究进展

探索准一维纳米结构材料的维数和尺寸,对其光学、电学和力学等性质的影响有很大的研究价值。介绍了半导体纳米棒、纳米线、纳米带等典型准一维纳米材料的一些最新研究进展,并对准一维纳米材料的研究趋势作了展望。     

Porphyrinic Metal–Organic Frameworks Coated Gold Nanorods as a Versatile Nanoplatform for Combined Photodynamic/Photothermal/Chemotherapy of Tumor

In this paper, a simple, but effective method is reported to construct the core?shell gold nanorod@metal–organic frameworks (AuNR@MOFs) as a multifunctional theranostic platform by using functionalized AuNRs as seed crystal for the growth of porphyrinic MOFs on the surface of AuNR. Such a delicate tunable core?shell composite not only possesses the improved drug loading efficiency, near‐infrared light‐trigger drug release, and fluorescence imaging, but also can produce reactive oxygen species as well as photothermal activity to achieve combined cancer therapy. It is further demonstrated that the camptothecin loaded AuNR@MOFs show distinctively synergistic efficiency for damaging the cancer cell in vitro and inhibiting the tumor growth and metastasis in vivo. The development of this high‐performance incorporated nanostructure will provide more perspectives in the design of versatile nanomaterials for biomedical applications.     

表面形貌对定向氧化锌阵列场致发射性能的影响

采用热蒸发的方法生长不同形貌的ZnO纳米材料。通过调节反应温度和氧气流量,生长了梳状ZnO ,ZnO纳米针和ZnO纳米柱状。场致发射测试结果表明一维纳米ZnO材料的表明形貌对其开启电场和发射电流有很大的影响。ZnO纳米柱阵列的开启电场最低,电流密度最大。这是由于它与衬底的良好接触以及较弱的场屏蔽效应。实验结果表明ZnO纳米柱阵列是一种优良的场致发射器件的冷阴极材料。     

籽晶层退火温度对ZnO纳米棒形貌及发光特性的影响

以不同退火温度处理后的ZnO籽晶层为基底,采用水热法生长了ZnO纳米棒阵列。对制备得到的ZnO纳米棒阵列的形貌、结构以及发光特性进行了表征,分析了籽晶层的退火温度对ZnO纳米棒阵列的形貌及发光性质的影响,发现通过调节籽晶层的退火温度,可以控制ZnO纳米棒的大小及密度,并发现在经400℃退火后的籽晶层上生长的ZnO纳米棒阵列形貌最佳,发光性能最优。