在PCB中集成光数据流的制造

介绍了在PCB中采用埋入光互连波导形成集成光数据流的技术。     

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Due to its significant applications in many relevant fields, light detection in the solar‐blind deep‐ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high‐quality ultrawide‐bandgap (UWBG) semiconductors have enabled the realization of various high‐performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar‐blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga₂O₃, Mg_xZn_1?xO, III‐nitride compounds (Al_xGa_1?xN/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.     

光电侦察平台目标定位方法研究

分析了某型光电侦察平台目标定位原理,误差来源及定位结果,提出了利用非线性最小二乘法估计其系统误差,并对系统进行修正。为使估计结果具有较强的泛化能力,将系统误差分配给侦察平台的方位角和高低角。飞行试验表明,系统经过修正后,定位精度有了较大提高。     

基于低频电噪声的光电耦合器可靠性筛选方法研究

低频电噪声是表征电子器件质量和可靠性的敏感参数,通过测试低频噪声,可以快速、无损地实现光耦器件的可靠性评估。通过开展可靠性老化对光电耦合器低频噪声特性影响的试验研究,提出基于低频段宽频带噪声参数的光电耦合器可靠性筛选方法,并将可靠性筛选结果与点频噪声筛选方法结果进行对比分析。结果表明,与点频噪声参数等现有方法相比,宽频带噪声参数可以更灵敏和准确地表征器件可靠性,同时计算简便,基于宽频带噪声参数的光电耦合器可靠性筛选方法可以实现更为准确合理的可靠性分类筛选。     

厂商动态

厂商动态３Ｃｏｍ公司与Ｓｉｅｍｅｎｓ公司携手合作３Ｃｏｍ公司和Ｓｉｅｍｅｎｓ公司于近日宣布，两家公司已结成战略联盟，以适应集成电话数据网络市场日新月异的发展．两家公司将首先保证Ｓｉｅｍｅｎｓ公司的Ｈｉｃｏｍ电信系统与３Ｃｏｍ公司的企业数据网络系统可以...     

Perovskite Single Crystals: Synthesis,Optoelectronic Properties,and Application

Recently, lead halide perovskite (PVSK) polycrystalline films have drawn much attention as photoactive material and scored tremendous achievements in solar cells, photodetectors, light-emitting diodes, and lasers owing to their engrossing optoelectronic properties and facile solution-processed fabrication. However, large amounts of grain boundaries unfavorably induce ion migration, surface defect, and poor stability, impeding PVSK polycrystalline film-based optoelectronic devices from practical application. In comparison with the polycrystalline counterparts, PVSK single crystals (SCs) with lower trap density serve as a better platform for not only fundamental research but also device applications. In light of this, the idea of using PVSK single crystals (SCs) to construct the optoelectronic devices is then proposed. Since then, a series of synthesis methods of PVSK SCs have emerged. In this review, recent progress of synthesis method of PVSK SCs is tried to be summarized and their advantages and limitations are analyzed. And then, the optoelectronic properties including carrier dynamic, defects, ion migration, and instability issues in these 3D and 2D PVSK SCs are overviewed and accordingly the proper device configurations of corresponding solar cells, photodetectors, X-ray, γ-ray detectors, etc., are proposed. It is believed that this review can provide the guidance for the further development of PVSK SCs and their applications.     

激光傅里叶望远镜中重建图像矩阵规模的设定

为避免傅里叶望远镜重建图像压缩变形,依据激光发射孔径间距,提出了重建图像时矩阵行、列数间应满足的关系;为评价仿真或实验的成像效果,依据发射孔径间距和原目标图像矩阵大小,确定重建图像矩阵规模的具体大小。严格推导逆离散傅里叶变换在傅里叶望远镜中实现图像重建的过程,分析了其中所隐含的发射孔径间距和重建图像矩阵规模间的数量关系,得出两个限定关系公式。仿真和实验结果表明这两个公式可分别保证图像轮廓不产生畸变、重建目标矩阵与原始目标矩阵规模相同。     

面向21世纪的半导体光电子器件

面向２１ 世纪的高度信息化社会,人们正在大力开发新一代高性能半导体光电子器件,以满足高速、宽带、大容量、高清晰信息传输、存贮、处理、获取的需要。文章介绍了有关的高速ＬＤ、高速ＰＤ、大面阵ＣＣＤ、新型红外焦平面阵列、多功能集成光学器件等的发展动向。     

从CLEO''''98看半导体激光器的最新进展

根据ＣＬＥＯ’９８ 会议报道的有关内容,综述了半导体激光器的发展状况。重点叙述了大功率ＬＤ、可见光ＬＤ、中红外ＬＤ 及垂直腔面发射半导体激光器（ＶＣＳＥＬ） 的最新研究进展