2D Group IVB Transition Metal Dichalcogenides

Semiconductor technology is currently impaired by the surface dangling bond of materials, which introduces scattering and interface traps. 2D materials, especially transition metal dichalcogenides (TMDs) with different main groups, have settled this issue by utilizing unique atomically smooth surfaces and van der Waals (vdW) structures. Over the past few decades, many processes for exploring new materials, manipulating physical properties, and synthesizing single crystals have been developed. Among these 2D materials, group IVB TMDs are distinguished for their splendid physical properties, including ultrahigh mobility, charge density wave, superconducting transitions, etc. Here, the recent advances in group IVB TMDs are reviewed, which offer easy access to next generation nano-, opto-, thermal-electronic, energy storage and conversion applications. Both the advantages and challenges of these studies are summarized to further clarify existing problems.     

Very Low Degree of Energetic Disorder as the Origin of High Mobility in an n‐channel Polymer Semiconductor

Charge transport is investigated in high‐mobility n‐channel organic field‐effect transistors (OFETs) based on poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (P(NDI2OD‐T2), Polyera ActivInk? N2200) with variable‐temperature electrical measurements and charge‐modulation spectroscopy. Results indicate an unusually uniform energetic landscape of sites for charge‐carrier transport along the channel of the transistor as the main reason for the observed high‐electron mobility. Consistent with a lateral field‐independent transport at temperatures down to 10 K, the reorganization energy is proposed to play an important role in determining the activation energy for the mobility. Quantum chemical calculations, which show an efficient electronic coupling between adjacent units and a reorganization energy of a few hundred meV, are consistent with these findings.     

CuI Encapsulated within Single-Walled Carbon Nanotube Networks with High Current Carrying Capacity and Excellent Conductivity

High current carrying capacity and high conductivity are two important indicators for materials used in microscale electronics and inverters. However, it is challenging to obtain high conductivity and high current carrying capacity at the same time since high conductivity requires a weakly bonded system to provide free electrons, while high current carrying capacity requires a strongly bonded system. In this paper, CuI@SWCNT networks by filling the single-walled carbon nanotubes (SWCNTs) with CuI is ingeniously prepared. CuI@SWCNT shows good stability due to the confinement protection of SWCNTs. Through the host-guest hybridization, CuI@SWCNT networks exhibit a current carrying capacity of 2.04 × 10⁷ A cm⁻² and a conductivity of 31.67 kS m⁻¹. Their current carrying capacity and conductivity are significantly improved compared with SWCNT. The Kelvin probe force microscopy measurements show a drop of surface potential energy after SWCNT filled with CuI, indicating that the CuI guest molecules regulate the position of the Fermi level of SWCNTs, increasing carrier concentration, achieving high conductivity and high current carrying capacity. This study offers ideas and solutions for the regulation of high-performance carbon tube networks, which hold great promise for future applications in carbon-based electronic devices.     

有机薄膜器件电流机制的研究

对于有机薄膜器件(包括有机电致发光器件(OLED)和有机场效应晶体管(OTFT)),器件的电流机制直接决定了器件的性能,因此深刻理解其相关机理是十分必要的.虽然对于有机薄膜器件的电学性能研究较早,但是由于器件结构及有机薄膜内部影响机制的复杂性使得不同学者的研究结果很不一致.为此,文章以相同的镁银合金(MgAg)为电极,...     

一种新型的强流相对论等离子回旋管

本文介绍了一种新型的强流相对论器件——强流相对论等离子回旋管。叙述了在强流相对论性器件中填充等离子体实现空间电荷补偿的原理,及苏联科学院普通物理所在3cm波段获得的实验结果。     

基于MAX1873锂电充电控制器的双电源供电系统设计

目前大多数据采集系统采用220V交流电源供电，而在实时性要求高的场合则采用交流电源作为主电源并且蓄电池作为备用电源的双电源系统进行供电，以防止由于交流电源的突然断开而造成数据采集系统的数据丢失。针对220V交流电源供电系统以及交直流双电源供电系统中存在的问题和缺陷，介绍了多节锂电充电控制器MAX1873的特点和充电控制方法，以及利用MAX1873构成的锂电市电双电源供电系统的详细设计方法和设计调试中应注意的问题。     

无耗散耦合介观电路的能谱及量子电流

基于电荷的不连续性,对无耗散介观耦合电路进行量子化,在无相互作用Hamilton本征态基矢下给出介观电路的能谱关系;在电荷空间中,假设系统具有变换的对称性,通过求解电流本征值方程,研究和分析了介观电路中量子电流的性质。结果表明,电路能谱及其量子回路电流不仅与电路参数有关,而且明显地依赖于电荷的量子性质。     

Proton Conduction in Dense and Porous Nanocrystalline Ceria Thin Films

The electrical conductivity of ceria thin films (epitaxial as well as dense and porous nanocrystalline) is investigated in dry and wet atmosphere at temperatures below 500 °C. For the epitaxial and the fully dense nanocrystalline samples, no significant differences can be observed between dry and wet conditions. In marked contrast, the nanocrystalline porous films obtained via spin coating exhibit a considerable enhancement of the protonic conductivity below 300 °C in wet atmosphere. This outcome reveals that the residual open mesoporosity plays the key role for the enhancement of the proton transport at low temperatures and not the high density of grain boundaries. The quantitative analysis of the various pathways, along which the proton transport can take place, indicates that the observed proton conduction can arise not only from bulk water adsorbed in the open pores but also from the space charge zones on the water side of the water/oxide interface.     

HEMT器件小信号模型研究

提出一种AlGaAs/GaAs HEMT器件沟道电荷新模型,该模型用一个通用解析函数中系数的不同值来描述二维电子气(2DEG)和AlGaAs层中的电子浓度。在小信号特性上,除考虑了2DEG层外,又在考虑了AlGaAs层、速度饱和、饱和区沟道长度调制效应和源、漏串联电阻RS和RD等效应的基础上,推导出直流特性、跨导、输出电导和栅电容的解析表达式。仿真说明,在较大的栅、漏压范围内,该模型的理论值与实验结果符合良好。     

一种新型的基于无源射频身份识别应答器的电源供给方案

提出了一种基于全集成的无源射频身份识别(RFID)应答器芯片的电源供给方案,并在特许半导体的0.35μm嵌入EEPROM的CMOS工艺线上流片成功.提出的AC/DC和DC/DC电荷泵能够为RFID的应答器芯片提供稳定的工作电压,同时具有极低的功耗和很高的充电效率.还给出了电压倍增器的分析模型、与其他电荷泵的升压原理的比较以及仿真结果和芯片测试结果.