Platinum Binuclear Complexes as Phosphorescent Dopants for Monochromatic and White Organic Light‐Emitting Diodes

Efficient blue‐, green‐, and red‐light‐emitting organic diodes are fabricated using binuclear platinum complexes as phosphorescent dopants. The series of complexes used here have pyrazolate bridging ligands and the general formula C^∧NPt(μ‐pz)₂PtC^∧N (where C^∧N = 2‐(4′,6′‐difluorophenyl)pyridinato‐N,C^2′, pz = pyrazole ( 1 ), 3‐methyl‐5‐tert‐butylpyrazole ( 2 ), and 3,5‐bis(tert‐butyl)pyrazole ( 3 )). The Pt–Pt distance in the complexes, which decreases in the order 1 > 2 > 3 , solely determines the electroluminescence color of the organic light‐emitting diodes (OLEDs). Blue OLEDs fabricated using 8 % 1 doped into a 3,5‐bis(N‐carbazolyl)benzene (mCP) host have a quantum efficiency of 4.3 % at 120 Cd m^–2, a brightness of 3900 Cd m^–2 at 12 V, and Commission Internationale de L'Eclairage (CIE) coordinates of (0.11, 0.24). Green and red OLEDs fabricated with 2 and 3 , respectively, also give high quantum efficiencies (～ 6.7 %), with CIE coordinates of (0.31, 0.63) and (0.59, 0.46), respectively. The current‐density–voltage characteristics of devices made using dopants 2 and 3 indicate that hole trapping is enhanced by short Pt–Pt distances (< 3.1 Å). Blue electrophosphorescence is achieved by taking advantage of the binuclear molecular geometry in order to suppress dopant intermolecular interactions. No evidence of low‐energy emission from aggregate states is observed in OLEDs made with 50 % 1 doped into mCP. OLEDs made using 100 % 1 as an emissive layer display red luminescence, which is believed to originate from distorted complexes with compressed Pt–Pt separations located in defect sites within the neat film. White OLEDs are fabricated using 1 and 3 in three different device architectures, either with one or two dopants in dual emissive layers or both dopants in a single emissive layer. All the white OLEDs have high quantum efficiency (～ 5 %) and brightness (～ 600 Cd m^–2 at 10 V).     

新安江流域安徽省地区水环境状况分析

统计分析流域内点源污染、面源污染产生量与污染物入河量的调查监测数据,结果表明:安徽省辖新安江流域点源入河系数约为面源入河系数2~3倍,点源污染是流域内主要污染来源,但面源污染的作用不容忽视,尤其是总磷,有近2/3来自面源,相对省辖淮河、长江两流域来说,面源污染贡献率明显增大。指出流域污染防治必须综合考虑点、面源污染两个方面;在点源污染不太严重的情况下,对面源污染的治理必须引起足够的重视,才能取得实效。     

光电设备电子机柜布线工艺研究

作为信号和电能载体的导线，同时也是噪声的载体和外来噪声侵入设备的媒体。描述了噪声通过导线侵入设备内部的方式，通过降低噪声的途径确定了机柜布线的原则，介绍了布线的要求和方法，最后提出了用布线槽布线的建议。     

两种基于弯曲损耗的光纤测试仪器原理及应用

光纤通信技术的飞速发展带动了光纤测试仪器的发展。主要对两种利用弯曲损耗对光纤进行检测的仪器——光纤识别仪、光纤对线器的原理、结构及其在光纤通信工程中的应用进行了阐述，两种仪器可以在不中断光纤通信的情况下对光纤进行检测，极大地降低了对光纤通信系统的影响，对光纤通信系统具有重要意义。     

“锲而不舍 金石可镂”——上海秀派公司2．45GHz有源RFID标签技术的成功之路

上海秀派公司坚持自己的技术长项——2．45GHz有源RFID,充分发扬该种RFID的特长,记者采访该公司时了解到了开发方面的很多细节、成功案例和实施经验。我们不但非常推崇该公司的“锲而不舍”的意志,而且还意识到如果秀派公司的成功经验一旦辐射到中国的RFID行业中,一定会把这项在国外诞生的技术更好地植根于中国的土壤,使之更加适合中国的实用环境。     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

从PZT体系看无铅压电陶瓷的可能应用

总结了主要以(Bi0.5Na0.5)TiO3和NaNbO3为基的无铅压电陶瓷的性能，以Pb(Ti，Zr)TiO3基二元系、三元系压电陶瓷的性能与应用为参考，分析了无铅压电陶瓷可能的器件应用。此外，还对拓宽无铅压电陶瓷应用需要改进的性能提出了建议。     

Mechanical properties of polyethylene mixtures crystallized under high pressure

The mechanical properties of a medium molecular weight polyethylene (MMW‐PE) and an ultrahigh molecular weight PE (UHMW‐PE) binary mixture with different weight fractions crystallized from the melt at 0.1 and 450 MPa were studied. The tensile modulus, yield stress, and strain were obtained as a function of the weight fractions in the PE mixtures at 25 and 85°C. The tensile modulus in the sample crystallized at 0.1 MPa decreased from 1.5 GPa of pure MMW‐PE to about 0.4 GPa of pure UHMW‐PE with the UHMW‐PE content but it did not decrease with the UHMW‐PE in the sample crystallized at 450 MPa in testing at 25°C. A decreasing rate of the storage modulus E′ of UHMW‐PE in a dynamic measurement for the sample crystallized at 0.1 MPa with the temperature is larger than that of the sample crystallized at 450 MPa. These experimental facts are interpreted in relation to the molecular motion and crystallinity of the sample. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 87: 1962–1968, 2003     

抗真菌蛋白Rs-AFP2基因定点突变及其对大肠杆菌中表达的影响

为了研究遗传密码子对表达调控的影响,利用PCR重叠延伸法,对萝卜抗真菌蛋白Rs-AFP2基因编码序列区的部分核苷酸进行沉默突变,构建突变体Rs-AFPm.序列分析表明,PCR产物全长240bp,有一个阅读框,编码的蛋白由29个氨基酸的信号肽和51个氨基酸的抗真菌蛋白组成.突变体与突变前的Rs-AFP2基因相比,在编码区第3号氨基酸Lys相差一个碱基(TTG→TTA),第5号氨基酸Gln相差一个碱基(CAG→CAA),第6号稀有密码子Arg相差两个碱基(CAG→CGA).重新合成引物,将切除信号肽的Rs-AFP2基因和Rs-AFPm基因与原核表达载体pET-21b(+)分别重组到大肠杆菌BL21菌株.IPTG诱导后,二者均得到了表达.软件分析显示,突变前pETAFPo表达产物占全菌蛋白的3%,突变后pETAFPm的表达产物占全菌蛋白含量的8%;表达蛋白主要以包涵体的形式存在,包涵体经超声波破碎后,蛋白质复性,抑菌结果表明,pETAFPm表达产物的抑菌半径大于pETAFP2表达产物的抑菌半径.这些都说明改造后的Rs-AFPm基因与Rs-AFP2基因相比,已有效地提高表达量.     

PKI/CA技术综述

公开密钥基础设施(PKI)是解决网络安全的技术．典型PKI应用系统包括安全Web、注册机构(RA)、认证机构(CA)、目录(LDAP)和数据库等服务器．RA验证客户证书申请后提交CA．CA检查信息完整和数字签名正确后把证书存放到证书库和目录服务器，并将签发证书序列号通知客户和RA．客户即可使用该号通过目录服务器下载证书．1993年以来，美、加、欧洲、韩、日等国已相继展开PKI研究．我国2001年将PKI列入十五863计划，并着手解决PKI标准化、CA互联互通等关键技术问题。