某高层住宅楼转换层施工案例分析

讨论了厚板迭合层的几种施工方法，并对其中二次迭合成型施工法进行了详细的论述，通过具体案例分析，进行了技术经济比较，为类似工程的应用提供了参考。     

高效空气电极的制备

空气极是整个空气电池中的关键所在，空气极的性能受着防水层的性能、催化层的性能、制备工艺等多种因素的影响．本实验对比了不同含量的聚四氟乙烯、活性碳颗粒等做成的防水层的特性及不同的催化剂(银粉、La-Ca-Co-O等催化剂)做成的催化层的特性．用电化学工作站研究了空气电极的析氧和氧还原特性，认为用碳酸氢铵为造孔剂、用银粉做催化剂的空气电极效果最好．     

南京市冬季市区和郊区晴天大气边界层结构对比分析

应用2008年12月24—31日南京市区和郊区同步大气边界层观测资料,对晴天大气边界层结构进行对比分析．结果表明：南京地区冬季晴天,市区近地面层气温高于江北郊区近地面层的气温,市区热岛效应明显,且热岛强度夜间大于白天;市区逆温出现的时间滞后于郊区,逆温层高度也大于郊区．夜间,市、郊区风速随高度不断增大,并在一定的高度出现一个8m／s的极值中心．市区空气相对干燥．通过典型日分析,市区14：00干岛效应显著,相同高度上相对湿度一直低于郊区．在市、郊区近地面层中,愈近地面风速愈小;近地面层中白天风速最大,夜间最小;白天,大气层结不稳定,湍流混合作用强,上下层风速的差别趋于减小．市区风速在低层受建筑物影响．相同高度上小于郊区风速．     

孔内深层超强夯法处理厚层人工回填土的应用研究

介绍了孔内深层超强夯法（SDDC）的基本原理,并将SDDC工法运用于处理某机场内厚层人工回填土地基,对无机固体废料进行了资源化回收利用。通过复合地基载荷试验、标准贯入试验和重型动力触探试验对SDDC施工质量进行检测,对SDDC桩体和桩间土的承载力效果进行评价。结果表明,经SDDC工法处理后的复合地基均匀性较好,承载力显著提高,达到工程使用要求。     

In-Situ Nitrogen Doping of the TiO2 Photocatalyst Deposited by PEALD for Visible Light Activity

In this paper, an N-doped titanium oxide （TiO2） photocatalyst is deposited by a plasma-enhanced atomic layer deposition （PEALD） system through the in-situ doping method. X-ray photoelectron spectroscopy （XPS） analysis indicates that substitutional nitrogen atoms （-395.9 eV） with 1 atom% are effectively doped into TiO2 films. UV-VIS spectrometry shows that the in-situ nitrogen doping method indeed enhances the visible-activity of TiO2 films in the 425-550 nm range, and the results of the performance tests of the N-doped TiO2 films also imply that the photocatalysis activity is improved by in-situ doping. The in-situ doping mechanism of the N-doped TiO2 film is suggested according to the XPS results and the typical atomic layer deposition process.     

D2、M2、S5模具扁钢脱碳特性实验研究

开展了在空气和氮气两种气氛下,采用Gleeble-1500热模拟机与普通电炉两种热方式、不同加热温度、加热时间对D2、M2、S5钢脱碳层深度影响的试验研究。依据试验结果,结合现场实际制定了较为合理的生产工艺并在现场成功应用,使上述模具扁钢脱碳层指标达到了美国ASTM－A681技术标准。     

正电子湮没研究Al、Nb共掺CaCu3Ti4O12陶瓷高介电常数机理

关于CaCu₃Ti₄O₁₂陶瓷的高介电常数机理,目前广泛接受的是非本征的内阻挡层电容模型。该模型认为在多晶中元素变价、缺陷和非化学计量比等导致的半导化晶粒被绝缘晶界层,即内阻挡层所包围。其中内阻挡层的厚度对材料的介电性能影响较大,而扫描电子显微镜（SEM）测试表明样品晶界呈稀烂的果酱状,SEM难以测量晶界区域绝缘内阻挡层厚度。本文采用正电子湮没技术表征其厚度,通过对CaCu₃Ti₄O₁₂陶瓷共掺不同浓度的Al、Nb（CaCu₃Ti_4-xAl_0.5xNb_0.5xO₁₂,x=0.2%、0.5%、5.0%）改变其晶粒和晶界的微观结构,研究CaCu₃Ti₄O₁₂陶瓷高介电常数机理。正电子湮没结果显示,掺杂样品符合多普勒展宽谱S参数的变化趋势与平均寿命的变化趋势一致。x=0.5%掺杂样品的介电常数最高,其平均寿命、S参数和湮没长寿命成分均最小,阻挡层最薄。实验结果验证了描述CaCu₃Ti₄O₁₂陶瓷高介电常数机理的内阻挡层电容模型的预测。     

二层交换机的攻击分析与防范技术的研究

本文通过OSI模型的第二层的特点,分析了二层交换机存在的安全隐患,提出了相应的解决办法。     

Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)3

Abstract

We have characterized the structure and electrical properties of p-type nanocrystalline silicon films prepared by radio-frequency plasma-enhanced chemical vapor deposition and explored optimization methods of such layers for potential applications in thin-film solar cells. Particular attention was paid to the characterization of very thin (～20 nm) films. The cross-sectional morphology of the layers was studied by fitting the ellipsometry spectra using a multilayer model. The results suggest that the crystallization process in a high-pressure growth regime is mostly realized through a subsurface mechanism in the absence of the incubation layer at the substrate-film interface. Hydrogen plasma treatment of a 22-nm-thick film improved its electrical properties (conductivity increased more than ten times) owing to hydrogen insertion and Si structure rearrangements throughout the entire thickness of the film.     

Atomic layer deposition of thin films of ZnSe—structural and optical characterization

Thin films of sphalerite-type ZnSe were grown by atomic layer deposition (ALD) from elemental Zn and Se precursors. These films, grown on various substrates, show bright blue ‘edge’ emission accompanied by donor-acceptor pair emissions in the blue, green and red spectral regions. Red, green and blue emissions mixed together give a white color, with a color temperature between 2400 and 4500 K depending on a layer thickness and temperature. ZnSe grown by ALD is in consequence a promising material for the fabrication of semiconductor-based white light emitting thin film electroluminescence displays.