Polishing behaviors of ceria abrasives on silicon dioxide and silicon nitride CMP

The effects of ceria (CeO₂) abrasives in chemical mechanical polishing (CMP) slurries were investigated on silicon dioxide (SiO₂) and silicon nitride (Si₃N₄) polishing process. The ceria abrasives were prepared by the flux method, using potassium hydroxide (KOH) as the grain growth accelerator. The primary particle size of the ceria abrasives was controlled in the range of ~ 84-417 nm by changing the concentration of potassium hydroxide and the calcination temperature without mechanical milling process. The removal rate of silicon dioxide film strongly depended upon abrasive size up to an optimum abrasive size (295 nm) after CMP process. However, the surface uniformity deteriorated as abrasive size increases. The observed polishing results confirmed that there exists an optimum abrasive size (295 nm) for maximum removal selectivity between oxide and nitride films. In this study, polishing behaviors of the ceria abrasives were discussed in terms of morphological characteristics.     

球土含量对环保型轻质材料性能的影响

本文以陶瓷抛光废料为主要原料,辅以球土、长石、石英等,制备一种以闭口气孔为主的新型轻质建筑材料.在此基础上,采用XRD、体式显微镜、导热仪等研究了球土含量对试样的体积密度、抗压强度、物相组成、导热系数等性能的影响.实验结果表明:随着球土含量的增多,材料中莫来石相开始形成并逐渐增多,抗压强度也逐渐增强;另一方面,随着球土添加量的增加,试样中孔径明显变小,体积密度增大,相应的导热系数随体积密度的增大而直线增大.     

氧化铝含量对环保型轻质材料性能的影响

本文以陶瓷抛光废料为主要原料,辅以长石、球土、石英等,制备环保型轻质材料.在此基础上,利用XRD、体式显微镜、导热仪等详细研究了氧化铝含量对试样体积密度、抗压强度、物相组成、导热系数等性能的影响.研究结果表明:随氧化铝含量的增多,试样的体积密度、抗压强度逐渐增大,且导热系数随体积密度的增大呈线性增大.此外,少量的氧化铝有助于试样内堇青石相的生成,但过多的氧化铝导致堇青石峰强度减弱,并伴有少量的刚玉相和莫来石相出现.     

600MW空冷机组凝结水精处理加装混床技术改造

介绍了阳城电厂2x600 MW间接空冷机组凝结水精处理系统粉末树脂覆盖过滤器的运行状况,其存在的问题是除盐能力低.系统增加高速混床后,运行效果明显提高,汽水品质得到极大改善,节约了运行成本.     

Synthesis of a foam ceramic based on ceramic tile polishing waste using SiC as foaming agent

Due to the large amount of ceramic tile polishing waste generated in China, the recycling of this waste residue becomes important. Herein a foam ceramic was successfully produced by using ceramic tile polishing waste as main raw material. In this research, SiC was added as the foam agent, and the foaming mechanism was also investigated. The results showed that the best dosage of SiC was 1%. Furthermore, in order to obtain a foam ceramic with better structure, the sodium phosphate was added in raw materials as foam stabilizer. The influence of this addition on the microstructure and properties of foam ceramic was investigated. It was found that the optimum additive amount of sodium phosphate is 2–3%.     

自行车钢球行星抛光加工工艺

阐述了自行车钢球行星抛光的机理，介绍行星抛光设备，进行新旧抛光工艺的对比，指出了行星抛光加工工艺的发展方向．     

Electrolyte composition and removal mechanism of Cu electrochemical mechanical polishing

The optimization of electrolytes and the material removal mechanisms for Cu electrochemical mechanical planarization （ECMP） at different pH values including 5-methyl-1H-benzotriazole （TTA）, hydroxyethylidenediphosphoric acid （HEDP）, and tribasic ammonium citrate （TAC） were investigated by electrochemical techniques, X-ray photoelectron spectrometer （XPS） analysis, nano-scratch tests, AFM measurements, and polishing of Cu-coated blanket wafers. The experimental results show that the planarization efficiency and the surface quality after ECMP obtained in alkali-based solutions are superior to that in acidic-based solutions, especially at pH=8. The optimal electrolyte compositions （mass fraction） are 6% HEDP, 0.3% TTA and 3% TAC at pH=8. The main factor affecting the thickness of the oxide layer formed during ECMP process is the applied potential. The soft layer formation is a major mechanism for electrochemical enhanced mechanical abrasion. The surface topography evolution before and after electrochemical polishing （ECP） illustrates the mechanism of mechanical abrasion accelerating electrochemical dissolution, that is, the residual stress caused by the mechanical wear enhances the electrochemical dissolution rate. This understanding is beneficial for optimization of ECMP processes.     

化学机械抛光制程中铜抛光液平坦化能力的评估

The evaluation methods of planarization capability of copper slurry are investigated.Planarization capability and material removal rate are the most essential properties of slurry.The goal of chemical mechanical polishing(CMP) is to achieve a flat and smooth surface.Planarization capability is the elimination capability of the step height on the copper pattern wafer surface,and reflects the passivation capability of the slurry to a certain extent.Through analyzing the planarization mechanism of the CMP process and experimental results,the planarization capability of the slurry can be evaluated by the following five aspects:pressure sensitivity,temperature sensitivity,static etch rate,planarization efficiency and saturation properties.     

Effects of laser polishing on surface quality and mechanical properties of PLA parts built by fused deposition modeling

Fused deposition modeling (FDM) produces parts through layer by layer on the top of each other, making it almost impossible to obtain smooth printed parts. Hence, there is a huge demand for the postprocessing of the FDM-printed parts. Laser polishing is a novel technique that can be used to polish products to obtain a smoother surface. The aim of this work was to explore the feasibility of surface-finishing FDM-printed polylactic acid (PLA) parts by laser polishing. The surface roughness, surface morphology, dynamic mechanical analysis (DMA), and tensile properties were investigated. The results indicated that the lower laser power and the bigger laser beam diameter within a certain range could facilitate the formation of smoother surface. With optimized parameters, the surface roughness was reduced by 90.4%. DMA showed that the storage modulus (E’) and glass transition temperature of PLA specimens were significantly improved due to the decrease of molecular mobility of denser structures. Moreover, the tensile strength and Young's modulus of the PLA specimen were also significantly increased after laser polishing. The fracture morphologies were observed, and the possible strengthening mechanism was also discussed. These results indicated that laser polishing could be an efficient method for surface polishing of FDM parts. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2020 , 137, 48288.     

抛光膏中磨料的解析

利用SEM,EDS分析了抛光膏中磨料的形状,尺寸和成分。结果表明,进口抛光膏中采有的磨料是直径为2－5μm的柱状氧化铝。