LTE系统多小区上行联合功控算法

针对传统的小区内开环功率控制算法通常以提升本小区的吞吐量性能为目标，忽略了当前小区用户对邻小区用户同频干扰的问题，为提升边缘用户性能的同时兼顾系统整体性能，提出了一种LTE系统小区间上行联合功率控制（UJPC）算法。该算法采用单基站三扇区为系统模型，以最优化系统吞吐量比例公平函数为目标，首先根据最小信干噪比（SINR）约束值和用户最大发射功率这两个约束条件得到相应的数学优化模型，然后采用连续凸近似的方法求解优化问题得出各个基站所管辖的小区内所有用户的最优发射功率。仿真结果表明，与基准的开环功控方案相比，联合功控方案在保证系统平均频谱利用率的情况下能够较大幅度地提高小区边缘频谱利用率，其最佳性能增益能达到50%。     

Social licence: power imbalances and levels of consciousness – two case studies

ABSTRACT

Social licence to operate (SLO) is a term that is finding increasing acceptance in a number of industries. Like all new terms, its precise meaning and implications are still being investigated. Using data from previous studies, this paper offers an analysis of the SLO of two case studies with each study being viewed separately through the grid of a distinct theoretical framework. Case study 1 looks at the development of differential social licence negotiated in the Hamlet of Cambridge Bay, Nunavut, as a result of an impact and benefit agreement negotiated between Tahera Diamond Corp. and the Kitikmeot Inuit Organisation in 2004. The study demonstrates that general acceptance of resource development can be uneven and reflect an unequal distribution of decision-making power. In case study 2, stakeholders of a failed mineral development project were queried across time about the specifics of the proposed mine development and were queried about resource development across different levels of consciousness. Perhaps, SLO is variable across different levels of consciousness. The paper concludes with observations about the variable nature of SLO acceptance across populations and across levels of consciousness within individuals. Perhaps, the concept of SLO is, in fact, complex, difficult to define and measure and, at this point, of limited utility as a measure of resource development acceptance.     

Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.     

Enabling supercapacitors to compete for ancillary services: An important step towards 100 % renewable energy

While wind and solar generation has increased dramatically over the past decade, there has been a much larger increase in gas generation (eia, 2019). This is driven in part by low gas prices but also in part by how electricity markets are organized. The intermittent nature of wind and solar generation increases the need for more flexible and reliable generation; a role gas plants fill well. However, current market structures and rules unfairly tip the balance in their favor compared to energy storage systems. They have created market barriers restrictive enough to prevent market participation of a technology key to a 100 % renewable grid: supercapacitors. Adjusting markets to remove the market barriers to supercapacitor and other energy storage systems will allow for increased renewable penetration while simultaneously improving grid performance and reducing costs.     

Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.     

多带OFDM-UWB系统峰均功率比降低方法研究

针对多带OFDM—UWB信号存在高峰均功率比的问题，提出了利用扩展与交织降低系统信号峰均功率比的方法。该方法通过对传输数据进行正交扩展与交织，使得进入多载波调制的数据趋于高斯分布，减小了传输数据自相关函数的旁瓣峰值，降低了OFDM-UWB信号的峰均功率比。由于采用正交矩阵进行扩展，扩展前后的数据传输速率保持不变。仿真结果表明，扩展与交织可以有效地降低信号峰均功率比2-5dB左右。同时该方法还具有抗窄带干扰的鲁棒性。     

汽车电动助力转向系统的发展

简述了电动助力转向系统的研究现状及其基本结构、工作原理和主要特点。分析了该系统的主要元件，论述了亥系统的发展趋势。     

掺镱双包层高功率光纤激光器输出特性研究

对线形腔掺镱双包层高功率光纤激光器的输出特性进行了研究 ,通过求解速率方程 ,得到了激光器泵浦阈值功率、输出光功率和斜率效率的表达式。分析了光纤长度、腔镜反射率和泵浦波长等因素对激光器阈值功率、输出光功率和斜率效率的影响 ,为高功率光纤激光器的优化设计提供了理论依据     

计量用脉冲Nd：YAG倍频激光器及其电源

介绍了脉冲Nd:YAG倍频激光器双波长（1064／532nm）3种输出的激光光路。1064nm输出的动静比可达0.40；KTP晶体外腔倍频效率可达0.50。介绍了稳定可靠的调Q电路、逻辑控制电路和开关电源的主电路及其参数计算。     

定径机在φ76自动轧管机组的应用

介绍了如何根据生产工艺需求对定径机进行设备改造和孔型优化设计，及定径机在φ76自动轧管机组的应用情况。