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81.
具有重复感染可能性的传染病由于不受抗体或疫苗等手段的阻碍,其传播范围会比普通传染病更加广泛,严重危害人类的身心健康,影响社会的和谐稳定,有必要对其传播规律进行探究,以便于更有针对性地制定应对策略。基于经典的传染病模型,本文构建考虑了传染病重复感染特征的SI1SI2R模型,定义异质性个体之间的交互及传播规则,并利用ABM仿真建模的方法探究具有重复性感染特征的传染病在异质性群体间的传播规律。仿真实验结果表明,此类传染病感染范围会随二次感染率的提升而增加,而异质性传播群体的组成不仅会影响感染人数的比例,还会影响其到达峰值的时间。因此,不仅要减小此类疾病反复感染的可能,还要根据传播群体的异质性提出更有效率的管理方案。 相似文献
82.
交叉耦合腔体滤波器的设计与实现 总被引:3,自引:1,他引:3
通过对广义Chebyshev滤波器设计方法的深入研究,改进了由技术指标提取滤波器阶数和传输零点的综合方法;基于提出的分析模型,用Ansoft HFSS建立同轴腔体滤波器,对谐振腔的本征频率、耦合系数、抽头位置进行仿真计算。通过960MHz交叉耦合滤波器实例设计验证了该综合方法的有效性。 相似文献
83.
84.
Reflection and transmission of ultrasonic waves by a layer-like region of distributed microcracks in a bulk material has been investigated. It has been assumed that for sufficiently low frequencies and far away from the damaged layer, the reflected and transmitted waves are plane waves. By applying the Betti reciprocal theorem to a cell containingN cracks, and by choosing one elastodynamic state as the actual wave state and the other as a suitably chosen auxiliary wave state, the reflection and transmission coefficients have been expressed in terms of integrals over theN cracks. Simple expressions have been obtained for the case that all cracks are identical and parallel to each other. For the case that the cracks do not interact with each other, numerical results for the reflection and transmission coefficients are presented for a distribution of penny-shaped cracks. The variation of these coefficients with frequency, relative layer thickness and angle of incidence has been displayed in graphs. 相似文献
85.
Q. Liu H. Lakner A. Meinert F. Scholz A. Sohmer E. Kubalek 《Materials Science and Engineering: B》1997,50(1-3):245-250
Wurtzite InGaN/GaN and AlGaN/GaN heterostructures grown by metal organic vapor phase epitaxy were studied using cathodoluminescence (CL) combined with secondary electron microscopy (SEM) and scanning transmission electron microscopy (STEM). The surface morphology of samples containing InGaN layers is dominated by three types of defects: mesa-like hexagonal structures, hexagonal pyramids and micropipes. At the positions of pyramids the whole epilayer is thicker than at defect free positions, while at the positions of micropipes the whole epilayer is much thinner. The luminescence efficiency as well as the emission wavelength are influenced by these defects. In SL structures an increasing SL period thickness in the growth direction was observed. Panchromatic CL images show intensity inhomogeneity in both InGaN/GaN and AlGaN/GaN heterostructure, which are related to local variations of the interface quality. In AlGaN/GaN SQW structures a broad deep-level luminescence band at around 543 nm was observed, which is generally absent in InGaN/GaN heterostructures. This deep-level emission is strongly enhanced in defect positions. 相似文献
86.
Abstract: A simple approach to plot photoelastic fringes in grey scale and also in colour from finite element (FE) results is presented for better recognition and comparison with experiments. This requires proper identification of the plotting variable from FE results. For comparison with transmission photoelasticity, post-processing of principal stress difference is needed and for reflection photoelasticity the principal strain difference is to be used. The importance of the use of appropriate correction factors for comparison with reflection photoelastic results is emphasised. A newer approach to evaluate R f for complicated geometries is indicated. Plotting of experimental fringes from finite elements is useful not only for validating the numerical model based on experiments but also for validating the experiments. To illustrate this, the problem of an interfacial crack in a bi-material Brazilian disc is discussed. 相似文献
87.
随着IP业务的超常规发展,传输瓶颈日渐显现出来;以安微电信骨干传输网的发展规划为例,介绍安微电信宽带骨干传输网的构建方案。 相似文献
88.
S. P. Ahrenkiel M. W. Wanlass J. J. Carapella L. M. Gedvilas B. M. Keyes R. K. Ahrenkiel H. R. Moutinho 《Journal of Electronic Materials》2004,33(3):185-193
Low-bandgap, lattice-mismatched GaxIn1−xAs (GaInAs) grown using InAsyP1−y (InAsP) compositional-step grades on InP is a primary choice for lightabsorbing, active layers in high-efficiency thermophotovoltaic
(TPV) devices. The GaInAs/InAsP double heterostructures (DHs) show exceptional minority carrier lifetimes of up to several
microseconds. We have performed a characterization survey of 0.4–0.6-eV GaInAs/InAsP DHs using a variety of techniques, including
transmission electron microscopy (TEM). Dislocations are rarely observed to thread into the GaInAs active layers from the
InAsP buffer layers that terminate the graded regions. Nearly complete strain relaxation occurs in buried regions of the InAsP
grades. The buffer-layer strain prior to deposition of the active layer is virtually independent of the net misfit. Foreknowledge
of this buffer-layer strain is essential to correctly lattice match the buffer to the GaInAs active layer. 相似文献
89.
谭小莲 《制冷空调与电力机械》2005,26(5):55-57
阐述了玻璃幕墙的传热系数K值与遮阳系数Sc的取值不同对空调冷负荷的影响;指出了不能单纯以K值来评估玻璃幕墙的热工性能的优劣,Sc值对热工性能影响更大,只有综合考虑K值和Sc值及环境因素,才能选择一个节能、环保的合适玻璃幕墙. 相似文献
90.
在基于可调谐F-P的FBG解调系统中,由于驱动电压与扫描波峰的关系不固定,增加了系统误差。为此研究了实时校正技术。首先,通过方案比较和分析,设计了并联型的实时校正系统,此系统可以通过多个参考点实时校正PZT的非线性问题以及可调谐F-P滤波器的结构性误差。然后,通过实验分析了PZT驱动电压与可调谐F-P波峰的关系,设计了快速分段算法。最后,针对此系统,设计了以现场可编程门阵列(FPGA)为核心的信号处理单元,将解调系统的控制、滤波计算和数据压缩等电路集成在FPGA芯片内部,保证了系统的实时性。实验结果表明,该系统的均方误差为2.2pm,最大误差为6pm。解决了此类解调系统受可调谐F-P滤波器精度限制的问题,提高了测量精度。 相似文献