基于开关电流技术的连续小波变换的实现方法

开关电流技术是一种新的模拟抽样数据处理技术。开关电流电路具有一般电路不具有的优点，与标准数字CMOS工艺兼容。连续小波变换是分析非平稳信号的有力工具，在信号处理上有广泛的应用。本文提出用开关电流技术实现连续小波变换的方法，并用Matlab仿真证明了其理论可行性。     

Fe3O4/PSt/TiO2多层包覆电磁响应微球的制备

首先采用分散聚合法将自制的Fe3O4磁流体和苯乙烯反应合成有磁核的Fe3O4/PSt磁性聚合物微球，然后，用非均匀成核水解反应在Fe3O4/PSt微球外包覆无定形二氧化钛，获得Fe3O4/PSt/TiO2复合微粒。用红外光谱、扫描电镜和热分析对粒子的形貌和结构进行了表征。并测试了微粒的介电性能和磁性，结果表明，所制得复合微粒有良好的电、磁响应性。     

Driver detection and recognition of lineside signals and signs at different approach speeds

A study was carried out using simulation to investigate driver responses to lineside signals and signs at various approach speeds. The objectives of the study were: (1) to find out whether train speed would significantly affect signal/sign reading; (2) to examine at which point certain types of signs or signals could be detected or recognised, and (3) to determine a speed cut-off level above which certain types of signs or signals are no longer recognisable or detectable. Fifty-seven train drivers from 12 Train Operating Companies in the UK participated in the trials. Twenty different types of lineside signs and ten types of signals were tested under six different approach speeds ranging from 100 to 350 km/h (62–218 mph). Driver performance measures were ‘time remaining to the signal/sign’ at the point of detection or recognition, and reading error rate. The results showed a significant influence of train speed on driver responses to lineside signals/signs and demonstrated a non-linear relationship between driver responses to signals/signs and approach speed. This has been used to estimate a maximum approach speed limit within which a specific signal or sign can be correctly detected or recognised. The findings and implications of the study are discussed in the paper.     

新型交流脉冲MIG焊接法的研究

采用自行研制的具有方框形外特性的交流脉冲MIG焊接电源 ,又设计了双凹形焊接电流波形 ,即过零前后的电流波形均为脉冲大电流 ,有利于交流脉冲MIG焊接电弧的连续稳定。按照这个新型交流脉冲MIG焊接方法 ,不必加任何稳弧措施 ,可实现电弧的稳定燃烧 ,解决了电弧磁偏吹的问题 ,具有较好的焊接工艺性能 ,用于压力容器的全位置焊接和铝焊接均有很好的焊缝成型     

Measurement of Thermal Diffusivity at Low Temperatures Using an Optical Reflectivity Technique

An experimental arrangement has been developed for measuring the transient temperature responses and the thermal diffusivities of foil materials in the range of 10 to 300K by using the optical reflectivity technique. The cryogenic system with optical windows is designed to provide temperatures from 10 to 300 K. The front surface of a foil specimen is heated by a pulsed Nd:YAG laser. In situ measurement of the reflectivity of a continuous-wave He–Ne laser at the rear surface is conducted on the microsecond time scale. Using the temperature dependence of reflectivity, the transient temperature response is deduced. The thermal diffusivity is obtained by fitting Parker's formulae to the experimental data on temperature rise. Stainless-steel foils are chosen as samples and are studied in the region from 10 to 300 K. The accuracy is examined by comparing the present results with the theoretical temperature responses and thermal diffusivity data from the literature. Good agreement is observed.     

Magnetic field dependence of shielding current density in Y-Ba-Cu-O rings at 77 K

A method for contactless measurement of the shielding critical current density and its dependence on the external magnetic field is described and analyzed. The obtained values are compared with those measured resistively on two different samples. It is shown that the shielding critical current densityJ _cs and the intergranular transport current densityJ _cr are identical if the measurement conditions are similar. A degradation ofJ _cs measured in the external field with AC ripple has been observed.     

微型计算机的接触电流和接地线电流的测量

介绍了微型计算机的两种不同类型的泄漏电流的危害及其测量方法。     

Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower.     

Modeling and Analysis of a Long Thin Conducting Stripline

A long thin conducting stripline embedded in a dielectric and centered between two large conducting plates, i.e., the stripline environment, is considered. The stripline is modeled as infinitely long, infinitely thin, and perfectly conducting by first considering a stripline of finite length, thickness, and conductivity in a dielectric layer. Starting from Maxwell's equations and assuming that the current on the stripline is a propagating wave in length direction, asymptotic expressions for the fields inside and in the neighbourhood of the stripline are deduced. These expressions are used to model the stripline in the stripline environment, which leads to a boundary-value problem for the electric potential. This problem is solved by two different approaches, leading to integral equations for the current and for an auxiliary function describing the electric potential. A relation between the current and the auxiliary function is deduced, which is used to obtain asymptotic expressions for current and impedance. Results are compared with a numerical solution of the integral equation for the current and with results in literature.