一类两性分枝过程条件均值增长率的极限性质

本文主要研究随机环境中配对依赖人口数两性 Galton-Watson 分枝过程的条件均值增长率的极限性质．利用上可加函数的性质，得到配对单元平均增长率的极限性质和该过程条件均值的上界和下界．文中给出了关于过程条件均值增长率的两个序列，利用配对单元平均增长率的性质，获得了这两个序列的极限性质．随机环境中配对依赖人口数两性分枝过程比较复杂，本文的结论推广了现有的研究成果．     

Growth Defects in Langasite Crystals Observed with White Beam Synchrotron Radiation Topography

Langasite single crystal was grown by the Czochralski method and its perfection was assessed by white beam synchrotron radiation topography. It is found that the growth core and the growth striations are the primary growth defects and they show strong X-ray kinematical contrast in the topographs. Another typical defect in LGS crystal is dislocation. The formation mechanisms of these growth defects in LGS crystals were discussed.     

Fatigue crack propagation of multiple coplanar cracks with the coupled extended finite element/fast marching method

A numerical technique for modeling fatigue crack propagation of multiple coplanar cracks is presented. The proposed method couples the extended finite element method (X-FEM) [Int. J. Numer. Meth. Engng. 48 (11) (2000) 1549] to the fast marching method (FMM) [Level Set Methods & Fast Marching Methods: Evolving Interfaces in Computational Geometry, Fluid Mechanics, Computer Vision, and Materials Science, Cambridge University Press, Cambridge, UK, 1999]. The entire crack geometry, including one or more cracks, is represented by a single signed distance (level set) function. Merging of distinct cracks is handled naturally by the FMM with no collision detection or mesh reconstruction required. The FMM in conjunction with the Paris crack growth law is used to advance the crack front. In the X-FEM, a discontinuous function and the two-dimensional asymptotic crack-tip displacement fields are added to the finite element approximation to account for the crack using the notion of partition of unity [Comput. Meth. Appl. Mech. Engng. 139 (1996) 289]. This enables the domain to be modeled by a single fixed finite element mesh with no explicit meshing of the crack surfaces. In an earlier study [Engng. Fract. Mech. 70 (1) (2003) 29], the methodology, algorithm, and implementation for three-dimensional crack propagation of single cracks was introduced. In this paper, simulations for multiple planar cracks are presented, with crack merging and fatigue growth carried out without any user-intervention or remeshing.     

Determining the Instantaneous Effective Energy of x-Ray Tube Bremsstrahlung

A method is described for determining the instantaneous effective energy of x-ray tube brehmsstrahlung by means of two semiconductor detectors employing epitaxial GaAs structures and a measurement circuit, which together determine the effective energy with an error of 5% in the range 20–80 keV in the presence of nonlinearity in the detector response.     

Fatigue crack growth in SiC particulates reinforced Al matrix graded composite

The SiC/Al graded composite was fabricated by powder metallurgy processing and its fatigue crack growth behavior was studied. The volume percentage of SiC particulates was distributed from 5 to 30% layer by layer on the cross section. Since the aluminium was dissolved together, there was no evident interface between the two layers with different volume fraction of SiC particulates. Fatigue crack growth was in direction of from 5 to 30% SiC layers under sinusoidal wave-form. The retardation of fatigue crack growth was found when crack propagated from low volume fraction of SiC to high volume fraction of SiC. The crack deflection and branching between two layers were observed, which decreased crack growth rates. In view of crack tip driving force, the plasticity mismatch between the layers shielded crack tip driving force, i.e. decreased the effective J-integral at the tip of the crack as the plastic zone of the crack tip spread from the weaker material into the stronger material.     

电子产品研制阶段可靠性增长试验研究

结合工程实际经验,深入讨论了可靠性增长过程及实现途径,在保持试验条件和改进过程不变的条件下,实施了对具体型号电子产品的可靠性增长试验,达到了预期的可靠性增长目标,并且利用可靠性增长试验的数学模型(AMSAA模型)来评估产品的可靠性增长,对开展可靠性增长与可靠性增长试验工作具有重要的实际意义.     

PECVD法低温沉积多晶硅薄膜的研究

在玻璃衬底上采用常规的PKCVD法在低温(≤400℃)条件下制得大颗较(直径＞100nm)、择优取向(220)明显的多晶硅薄膜。选用的反应气体为SiF4和H2混合气体。加入少量的SiH4后，沉积速率提高了近10倍。分析认为，在低温时促使多晶硅结构形成的反应基元应是SiFmHn(m n≤3)，而不可能是SiHn(n≤3)基团。     

Optimization of Selective Epitaxial Growth of Silicon in LPCVD

Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.