用CMOS工艺实现VSR光电集成接收机的途径

介绍了10Gbit／s速率的甚短距离光传输系统VSR(Very Short Reach)中的接收机。分析了几种有希望用于VSR系统的CMOS工艺兼容的光电探测器。提出用CMOS电路实现VSR光电集成(OEIC)接收机的可能性和实现方法。     

SCB火工品的研究与发展

文章评述了半导体桥火工品问世以来的研究成果与发展趋势。主要内容有半导体桥作用机理、半导体桥的结构与封装、半导体桥火工品的特点、半导体桥火工品的应用、半导体桥火工品的研究和发展趋势。     

Enhanced Photoelectrochemistry in CdS/Au Nanoparticle Bilayers

Three different configurations of Au‐nanoparticle/CdS‐nanoparticle arrays are organized on Au/quartz electrodes for enhanced photocurrent generation. In one configuration, Au‐nanoparticles are covalently linked to the electrode and the CdS‐nanoparticles are covalently linked to the bare Au‐nanoparticle assembly. The resulting photocurrent, φ = 7.5 %, is ca. 9‐fold higher than the photocurrent originating from a CdS‐nanoparticle layer that lacks the Au‐nanoparticles, φ = 0.8 %. The enhanced photocurrent in the Au/CdS nanoparticle array is attributed to effective charge separation of the electron–hole pair by the injection of conduction‐band electrons from the CdS‐ to the Au‐nanoparticles. Two other configurations involving electrostatically stabilized bipyridinium‐crosslinked Au/CdS or CdS/Au nanoparticle arrays were assembled on the Au/quartz crystal. The photocurrent quantum yields in the two systems are φ = 10 % and φ = 5 %, respectively. The photocurrents in control systems that include electrostatically bridged Au/CdS or CdS/Au nanoparticles by oligocationic units that lack electron‐acceptor units are substantially lower than the values observed in the analogous bipyridinium‐bridged systems. The enhanced photocurrents in the bipyridinium‐crosslinked systems is attributed to the stepwise electron transfer of conduction‐band electrons to the Au‐nanoparticles by the bipyridinium relay bridge, a process that stabilizes the electron–hole pair against recombination and leads to effective charge separation.     

MOCVD生长薄膜材料制作半导体可饱和吸收镜

介绍了当前国际上流行的用半导体可饱和吸收镜来对固体激光器、光纤激光器和半导体激光器进行被动锁模的方法,阐述了半导体可饱和吸收镜用来作为被动锁模吸收体的原理,并介绍了如何利用金属有机气相淀积(MOCVD)技术生长各种波长激光器所需要的半导体可饱和吸收镜.     

MATLAB在红外可视化分析中的应用

MATLAB是一个操作简捷、功能强大的数学辅助软件，在红外专业的可视化分析中具有很大的应用空间。介绍了MATLAB在黑体辐射理论、探测器器件分析中的具体使用。     

A Built-in Self-Test Scheme with Diagnostics Support for Embedded SRAM

In this paper we propose a novel built-in self-test (BIST) design for embedded SRAM cores. Our contribution includes a compact and efficient BIST circuit with diagnosis support and an automatic diagnostic system. The diagnosis module of our BIST circuit can capture the error syndromes as well as fault locations for the purposes of repair and fault/failure analysis. In addition, our design provides programmability for custom March algorithms with lower hardware cost. The combination of the on-line programming mode and diagnostic system dramatically reduces the effort in design debugging and yield enhancement. We have designed and implemented test chips with our BIST design. Experimental results show that the area overhead of the proposed BIST design is only 2.4% for a 128 KB SRAM, and 0.65% for a 2 MB one.     

微型生化分析仪样品室温度控制系统研究

结合微型生化分析仪样品室的要求,设计了一种基于单片机的微型生化分析仪样品室温度控制系统.它以AT89S51为核心,采用单总线高精度数字温度传感器DS18B20对样品室温度采样,同时利用汇编语言编写温度设定与控制程序,采用半导体制冷的方式,实现了温度在25℃、30℃、32℃和37℃四个温度值的稳定,控制精度达±0.5℃.     

A model for preventive maintenance operations and forecasting

Equipment costs constitute the greatest majority of overall costs for semiconductor manufacturing. Therefore, maintaining high equipment availability has been regarded as one of the major goals in the industry. The ability to forecast correctly equipment preventive maintenance (PM) timing requirements not only can help optimizing equipment uptime but also minimizing negative impacts on manufacturing production efficiency. This research used grey theory and evaluation diagnosis to construct a PM forecasting model for prediction of PM timing of various machines. The results showed significant improvements of PM timing predictions compared to the existing method based on experience and an alternative method proposed by Li and Chang (Semiconductor Manufacturing Technology Workshop 2002: 10–11, pp. 275–277) for the same fab cases. Received: June 2005 / Accepted: December 2005     

InP基应变补偿结构偏振不灵敏半导体光放大器制作的研究

为了制备偏振不灵敏的半导体光放大器(SOA)，将有源区设计为由4个压应变、3个张应变阱层及晶格匹配的垒层InGaAsP交替组合而成的应变补偿结构。器件做成带有倾角的扇形脊形波导结构，避免了常规制作SOA的复杂工艺。对样品3在80～125mA电流范围内，获得了偏振灵敏度≤0．6dB．最小可达0．1dB；较大的电流范围内FWHM值为40nm。     

机车大功率整流管试验台的研制

本文基于计算机技术和现代测量技术，介绍了一种虚拟仪器-机车大功率整流管试验台的研制。该试验台根据LMS自适应算法，模拟实际工作环境，自适应地控制试验过程，并对试验数据应用小波分析技术分析处理，得到机车大功率整流管准确而全面的性能参数，具有自动化程度高、试验结果可靠性高的优点。本文主要介绍试验数据处理和软件设计。