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21.
155Mb/s时分光交换系统 总被引:1,自引:0,他引:1
本文介绍了国内第一个155Mb/s时分光交换实验系统。系统以新型半导体光器件-半导体光开关门为核心构成,传输速度为155Mb/s。 相似文献
22.
Yi Kai Zhou Sung Woo Choi Shigeya Kimura Shuichi Emura Shigehiko Hasegawa Hajime Asahi 《Journal of Superconductivity and Novel Magnetism》2007,20(6):429-432
GaGdN layers were grown at temperatures below 300°C by radio-frequency plasma-assisted molecular beam epitaxy on sapphire
substrates. GaGdN samples with high Gd concentration as high as 12.5% were obtained by lowering the growth temperature. X-ray
diffraction results showed no obvious secondary phase, which means that the phase separation can be suppressed by the growth
at low temperatures. All samples, including those grown at room temperature, showed ferromagnetic characteristics. Photoluminescence
emission was observed, though spectra exhibit broad and sharp luminescence bands related to many kinds of defects. It is suggested
that electrons coming from defects, especially, nitrogen vacancy, stabilize ferromagnetism, and that the carrier-induced ferromagnetism
occurs in the low-temperature-growth GaGdN. 相似文献
23.
J. Okabayashi M. Watanabe H. Toyao T. Yamaguchi J. Yoshino 《Journal of Superconductivity and Novel Magnetism》2007,20(6):443-446
We have investigated the current pulse width dependence on current-driven magnetization reversal in double-barrier structures
using GaMnAs-based magnetic tunneling junctions (MTJ) in order to clarify the origin of low threshold current density for
current-driven magnetization reversal. Comparing with the case of single-barrier MTJ, the pulse-width dependence reveals that
threshold current density is reduced by double-barrier MTJ. We confirmed that the threshold current density in the order of
104 A/cm2 is estimated considering the effect of current pulse width. 相似文献
24.
A. Hori 《Thin solid films》2007,515(10):4480-4483
Electroluminescence (EL) spectral intensity in the high-brightness blue and green InGaN single-quantum-well (SQW) diodes has been comparatively studied over a wide temperature range and as a function of injection current. When the necessary forward bias conditions to get a certain current level are different, it is found that the anomalous EL quenching previously observed below 100 K for the SQW diodes strongly changes and shows a striking difference between the blue and green SQW diodes. This unusual EL evolution pattern is attributed to both internal and external fields, suggesting the importance of the internal piezoelectric field effects on the efficient carrier capture processes by localized tail states within the SQW under the presence of high-density misfit dislocations. 相似文献
25.
星间激光通信技术进展与趋势 总被引:3,自引:3,他引:0
较详细地评述了目前国外卫星间光通信技术研究的现状.根据关键单元技术的进展情况,总结了未来星间光通信系统的发展趋势。 相似文献
26.
We have studied properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). A large MCD peak whose intensity is larger than 500 mdeg for (InGaMn)As was observed. This peak intensity was about three times larger than that of typical (GaMn)As films. Relatively high Curie temperature of 83 K of [(In0.53Ga0.47)0.88Mn0.12]As was observed by Hall measurements. The carrier concentration of [(In0.53Ga0.47)0.88Mn0.12]As was estimated to be more than 1.0 × 1021 cm–3 by using the Curie–Weiss fitting of the Hall coefficient R
H, indicating that more than 40% of Mn atoms are activated. This means that (InGaMn)As has a higher activation ratio of Mn as acceptors than (GaMn)As. 相似文献
27.
Kenji Nomura Hiromichi OhtaKazushige Ueda Toshio Kamiya Masahiro HiranoHideo Hosono 《Thin solid films》2003,445(2):322-326
We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO3(ZnO)m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 105. The field-effect mobility increased from ∼1 to ∼10 cm2 (V s)−1 as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds. 相似文献
28.
本文报导了用铷原子7800A光电流谱来稳定半导体激光器的工作,在光电流谱线的中部发现了有利于稳频的凹陷,将半导体激光器频率锁定在凹陷的中央,估算的频率稳定度为1MHz。 相似文献
29.
The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated
by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors
were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and
Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively.
Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor
interfaces were the most stable. 相似文献
30.
光催化氧化后四环素的分解率与COD去除率之间关系的探讨 总被引:1,自引:0,他引:1
以粉状无机半导体(ZnO)为催化剂,探讨了水溶液中四环素经光催化氧化分解率和COD去除率之间的关系。实验表明,在本实验中四环素的分解率和COD去除率之间有较好的正相关性。当反庆系统中有足量的活性催化剂和足够的光照时间时,绝大部分四环素将被较彻底地氧化分解成CO2,这不仅有助于光催化反应机理的研究,助于今后在环保中的实际应用。 相似文献