Thermal stability of devices with molybdenum oxide doped organic semiconductors

We demonstrate the thermal stability of transition-metal-oxide (molybdenum oxide; MoO₃)-doped organic semiconductors. Impedance spectroscopy analysis indicated that thermal deformation of the intrinsic 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′-diamine (NPB) layer is facilitated when the MoO₃-doped NPB layer is deposited on the intrinsic NPB layer. The resistance of the intrinsic NPB layer is reduced from 300 kΩ to 3 kΩ after thermal annealing at 100 °C for 30 min. Temperature-dependent conductance/angular frequency–frequency (G/w-f-T) analysis revealed that the doping efficiency of MoO₃, which is represented by the activation energy (E_a), is reduced after the annealing process.     

Layer thickness and draft angle selection for stereolithography injection mould tooling

The introduction of rapid prototyping has allowed engineers and designers to generate physical models of required parts very early on in the design and development phase. Further to this, the use of stereolithography (SL) cavities as a rapid tooling method has allowed plastic prototype parts to be produced in their most common production manner -- by injection moulding. The process is best suited to small production runs where the high costs of conventionally machined tooling is prohibitive. One of the major drawbacks of the SL injectionmoulding process is the susceptibility of the tools to premature failure. SL tools may break under the force exerted by part ejection when the friction between a moulding and a core is greater than the tensile strength of the core, resulting in tensile failure. Very few justified recommendations exist about the choice of mould design variables that can lower the part ejection force experienced and reduce the risk of SL tool failure. This research investigates the ejection forces resulting from SL injection moulding tools which are identical in all respects except for their build layer thickness and incorporated draft angles in an attempt to identify appropriate evidence for recommendations with respect to these design variables and SL injection moulding. The results show that adjustment of draft angle results in a change of part ejection force as a reasonably linear relationship. An adjustment of the build layer thickness results in a change in part ejection force as a more non-linear relationship. The adjustment of build layer thickness had a greater effect on ejection force than the adjustment of draft angle. The results also show that the surface roughness of all tools remains unchanged after moulding a number of parts in polypropylene. A mathematical model was used in an attempt to predict ejection forces according to the moulding material used. This model reflected the experimental results in terms of relative values but not in absolute values, which may be due to inappropriate specific values used in their calculation. Finite element analysis (FEA) was used in an attempt to identify the factors involved in the ejection process. Results indicate that the effect of draft angle on ejection force is due to elastic deformation of the surface roughness. A fact borne out by the lack of damage to the surface after ejection.     

API-based two-dimensional dispatching decision-making approach for semiconductor wafer fabrication with operation due date–related objectives

This paper presents an adjacent pairwise interchanges (API)-based two-dimensional dispatching decision-making approach for semiconductor wafer fabrication with operation due date-related objectives. Each time when a machine becomes idle, the proposed dispatcher chooses a target processing job from the competing jobs and assigns it a start time. Giving the operation due date information of each competing job, we formulate this dispatcher as the mean absolute deviation problem to keep the jobs finished around their operation due dates in a proactive way. Dominance properties of this problem are established using proof by APIs. Then, a heuristic comprised of job selection within candidate set, movement of job cluster and local search is designed to solve this problem more efficiently. Numerical experiments validate the efficiency of the proposed heuristic in a single-machine environment as well as in a simulated wafer fab abstracted from practice. In comparison with four most referenced due date-related dispatching rules, the simulation study reveals the benefits brought by the two-dimensional dispatching decision with different due date tightness taken into account.     

Experimental based full process simulation of alumina selective laser processed parts densified by cold isostatic pressing and solid state sintering

The compound process of cold isostatic pressing (CIP) of alumina selective laser processed (SLP) parts and solid state sintering (SSS) and its full process simulation were realized in this paper, focusing on studying the overall deformation, relative density distribution, grain growth and sintering stress variation during the process. Especially, correlation was established between the macroscopic deformation and microscopic evolution. Model parameters for alumina are presented, which were optimized in accordance with the experimental results. CIPed part still exhibited density inhomogeneity, of which SSS tended to increase the overall density and homogenize density distribution. The sintering behavior was studied with the employment of dilatometer experiments. Furthermore, compared with conventional heating strategy, fast firing turned out to decrease sintering production time as well as drive the matter diffusion and densification process. The master sintering curve (MSC) moves upward a little under the condition of fast firing.     

The role of the electrode configuration on the electrical properties of small-molecule semiconductor thin-films

This paper presents a systematic analysis of the electrode configuration influence on the electrical properties of organic semiconductor (OSC) thin-film devices. We have fabricated and electrically characterized a set of planar two-terminal devices. The differences in I-V characteristics between the top and bottom contact structures are presented and analyzed. Top-contact configurations have a linear current vs. electric field behavior, while the bottom-electrode devices display a transition from ohmic to space-charge-limited conduction regime. The transition is temperature- and thickness-dependent. Finite-element calculations show that when the OSC film is connected using top electrodes, the current flows through the OSC bulk region. On the other hand, the bottom-electrode configuration allows most of the current to flow near the OSC/substrate interface. The current probes interfacial states resulting in a space-charge conduction regime. The results shed some light on the so-called “contact effects” commonly observed in organic thin-film transistors. The findings presented here have implications for both the understanding of the charge transport in OSC films and the design of organic semiconductor devices.     

The Investigation of Selective Ge Nano-Dot Formation by Excimer Laser Annealing with Pre-Pattern Free

ABSTRACT: Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth (SEG), reducing costs and improving throughput. Self-assembled Ge nano-dots produced by excimer laser annealing statistically distributed dot density and size dependent on laser energy. Improvement in the crystallization quality of the dots was also studied, and a strain analysis was undertaken.     

Direct shaping of oxides by laser insolation of transition metal oxalates

Films of copper and cobalt-iron oxalates were prepared from suspensions of powders in ethane-1,2-diol deposited on glass or polycarbonate substrates. Two-dimensional structures of oxides, resolved on the scale of less than ten micrometers, were formed by laser insolation of these films, using a photolithography machine. The nature of the constitutive phases of the oxides formed tends to show that the laser heating makes it possible to reach locally, temperatures higher than 1000 °C. The oxides formed are thus sintered. The residual oxalate can be removed by washing or dissolving, leaving the oxide structure on its substrate. In spite of a perfectible sintering, the formed structures could interest different technological applications (electronic or magnetic devices, gas sensors, photovoltaic systems…) requiring the shaping of simple or mixed oxides on a scale close to the micrometer. The process of selective laser decomposition of oxalates, could subsequently be suitable for additive manufacturing of 3D parts.     

Fabrication of a planar water gated organic field effect transistor using a hydrophilic polythiophene for improved digital inverter performance

A planar water gated OFET (WG-OFET) structure is fabricated by patterning gate, source and drain electrodes on the same plane at the same time. Transistor output characteristics of this novel structure employing commercial regioregular poly(3-hexylthiophene) (rr-P3HT) as polymer semiconductor and deionized (DI) water as gate dielectric show successful field effect transistor operation with an on–off current ratio of 43 A/A and transconductance of 2.5 μA/V. These output characteristics are improved using P3HT functionalized with poly(ethylene glycol) (PEG) (P3HT-co-P3PEGT), which is more hydrophilic, leading to on–off ratio of 130 A/A and transconductance of 3.9 μA/V. Utilization of 100 mM NaCl solution instead of DI water significantly increases the on–off ratio to 141 A/A and transconductance to 7.17 μA/V for commercial P3HT and to 217 A/A and to 11.9 μA/V for P3HT-co-P3PEGT. Finally, transistors with improved transconductances are used to build digital inverters with improved characteristics. Gain of the inverters employing P3HT and P3HT-co-P3PEGT are measured as 2.9 V/V and 10.3 V/V, respectively, with 100 mM NaCl solution.