轻型钢结构吊车梁设计方法及节点构造

通过分折和研究单层门式刚架轻型钢结构厂房中的吊车梁设计，总结了轻型钢结构吊车梁的设计方法和节点连接构造，对合理设计吊车梁，降低用钢量提出了设计建议。     

冶金厂房钢吊车梁设计中一些问题的探讨

对双层翼缘板焊接工型钢吊车梁的某些受力特征、吊车梁的支座节点连接构造设计等进行了较详尽的分析,提出了满足冶金工业厂房大跨度、大吨位吊车梁系统受力和工艺要求的方法.     

浅谈先张法预应力空心梁板施工质量通病的分析和防治

通过对先张法预应力空心梁板施工时容易忽视和发生的几个质量通病产生原因的分析，并结合工程实际和工作体会，粗略探讨了防治这些质量通病的一些措施和方法。     

High Gd Concentration GaGdN Grown at Low Temperatures

GaGdN layers were grown at temperatures below 300°C by radio-frequency plasma-assisted molecular beam epitaxy on sapphire substrates. GaGdN samples with high Gd concentration as high as 12.5% were obtained by lowering the growth temperature. X-ray diffraction results showed no obvious secondary phase, which means that the phase separation can be suppressed by the growth at low temperatures. All samples, including those grown at room temperature, showed ferromagnetic characteristics. Photoluminescence emission was observed, though spectra exhibit broad and sharp luminescence bands related to many kinds of defects. It is suggested that electrons coming from defects, especially, nitrogen vacancy, stabilize ferromagnetism, and that the carrier-induced ferromagnetism occurs in the low-temperature-growth GaGdN.     

阶梯教室、图书馆的结构设计

结合阶梯大教室的结构布置设计和预应力混凝土技术的运用，阐述该类结构的合理布置和预应力梁设计方法。     

Microscale and mesoscale discrete models for dynamic fracture of structures built of brittle material

In this work we present the discrete models for dynamic fracture of structures built of brittle materials. The models construction is based on Voronoi cell representation of the heterogeneous structure, with the beam lattice network used to model the cohesive and compressive forces between the neighboring cells. Each lattice component is a geometrically exact shear deformable beam which can describe large rigid body motion and the most salient fracture mechanisms. The latter can be represented through the corresponding form of the beam constitutive equations, which are derived either at microscale with random distribution of material properties or at a mesoscale with average deterministic values. The proposed models are also placed within the framework of dynamics, where special attention is paid to constructing the lattice network mass matrix as well as the corresponding time-stepping schemes. Numerical simulations of compression and bending tests is given to illustrate the models performance.     

Determination of the Coordinates of the Center of a Gaussian Beam by Means of a Matrix Photodetector Using a Weighting Method

A weighting algorithm to determine the coordinates of the center of a Gaussian laser beam projected onto a matrix photodetector is considered. The influence of the internal noise of the photodetector, the maximum brightness of the signal at the beam maximum, and the beam radius on the precision of the algorithm is investigated. Recommendations on image processing are presented.     

Polarity control of GaN epilayers grown on ZnO templates

We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH₃ is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH₃ pre-exposure helps form a Zn₃N₂ layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar.     

激光二极管线阵光束变换研究

推导出激光二极管线阵光束通过透镜系统的光强分布表达式，分析了出射光束的传输特性，设计一种凹柱透镜的光束变换系统得到一维均匀光强分布。此外，给出扩展角宽度的计算公式。     

Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As Grown on InP

We have studied properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). A large MCD peak whose intensity is larger than 500 mdeg for (InGaMn)As was observed. This peak intensity was about three times larger than that of typical (GaMn)As films. Relatively high Curie temperature of 83 K of [(In_0.53Ga_0.47)_0.88Mn_0.12]As was observed by Hall measurements. The carrier concentration of [(In_0.53Ga_0.47)_0.88Mn_0.12]As was estimated to be more than 1.0 × 10²¹ cm^–3 by using the Curie–Weiss fitting of the Hall coefficient R _H, indicating that more than 40% of Mn atoms are activated. This means that (InGaMn)As has a higher activation ratio of Mn as acceptors than (GaMn)As.