Structural properties of phosphorous-doped polycrystalline silicon

The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, E_L, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si–H vibration mode at 2000 decreases faster than the one at 2100 cm⁻¹. This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2–0.3 eV compared to the amorphous starting materials.     

液晶光阀光电导层光吸收系数的研究

用化学气相沉积法制备了液晶光阀中光电导层———非晶硅薄膜,从实验中得出最佳制备工艺的参数取值。给出了用包络线法测量非晶硅薄膜光吸收系数的原理,测量了样品的光吸收系数随波长的变化规律。得到样品在最佳工艺条件下的光吸收系数高于1×103cm-1。     

Electrical/electronic effects of titanium and iron impurities in EFG and FZ solar cell silicon: SPV/EBIC analysis

In this paper results on surface photovoltage (SPV) and electron beam induced conductivity (EBIC) studies of edge-defined film-fed growth (EFG) and floating zone (FZ) silicon solar cell materials (both p-type) are presented. A systematic comparison based on minority carrier diffusion length and carrier recombination is made between: (i) samples contaminated with Ti and/or Fe, (ii) samples gettered by phosphorous diffusion, and (iii) as-received samples. Deep level transient spectroscopy (DLTS) measurements, together with the iron-boron (FeB) pairing kinetics [1] have successfully been used to detect the presence of Fe in the samples. Even though this process is effective in revealing Fe impurities in p-type FZ silicon it is evidently not suitable for Fe identification in p-type EFG silicon. Ti, like Fe, is found to be a prominent lifetime-limiting metallic impurity in both EFG and FZ silicon. Phosphorous diffusion is proven to be an effective external gettering technique for fast-diffusing impurities such as Fe, but not for Ti.     

氧化铝/锌合金复合材料界面的SEM观察

利用挤压铸造制备氧化铝／锌合金复合材料，在扫描电镜（ＳＥＭ）上观察复合材料的界面。结果表明，在复合材料中纤维与基体间存在致密界面层，合金元素通过适当的化学反应可改善纤维与基体间的结合；在凝固过程中，纤维／基体界面上的硅在共晶体的共生生长过程中起了领先相作用，导致复合材料的共晶转变是由铝硅共晶转变和锌铝共晶转变两者组成。     

区熔单晶硅生产操作指导专家系统

本文介绍区熔单晶硅生产操作指导专家系统。首先，系统实现了连续图象的自动变周期、定瞬间采样，并提出一种新的区域扩张增量图象处理算法．其次，叙述了知识的获取过程及类规则，提出分布的多库结构，并实现了不确定性推理．最后，开发了区熔单晶硅生产操作指导专家系统，实现了从数据和图象采集、处理、事实获取、推理到给出操作指导一体化。     

激光结晶a-Si:H SOI离子注入和快速退火

本文对激光结晶a-Si∶H SOI结构砷注入和快速退火行为作了研究.a-Si∶H激光结晶有Lp-LCR,OD,FCR-2,FCR-1四个结晶区.用剖面电镜观察了结晶区的结构.扩展电阻测量表明Lp-LCR区中有两种扩散机制,即杂质在晶粒体内扩散和沿缺陷扩散.OD区中有三种扩散形式,除有上述两种以外,还有沿缺陷的扩散.首次比较了沿晶界和缺陷的扩散速度.     

百万吨级乙烯冷箱的设计

分析了百万吨级乙烯冷箱的设计难点和采取的对策，介绍杭氧设计、制造的乙烯冷箱的技术参数和设计方案，与国外公司设计方案的比较，说明杭氧乙烯冷箱的设计、制造技术与世界先进水平的差距大大缩小。     

A Cold Model Aerodynamical Test of Air-Staged Combustion in a Tangential Firing Utility Boiler

The purpose of this paper is to present the flow field in the 300MW tangential firing utility boiler that used the Low NOx Concentric Firing System （LNCFS）. Using the method of cold isothermal simulation ensures the geometric and boundary condition similarity. At the same time the condition of self-modeling is met. The experimental results show that the mixture of primary air and secondary air becomes slower, the average turbulence magnitude the relative diameter of the tangential firing enlarges of the main combustion zone becomes less and when the secondary air deflection angle increases When the velocity pressure ratio of the secondary air to the primary air （p2/p1） enlarges, the mixture of the secondary air and the primary air becomes stronger, the average turbulence magnitude of the main combustion zone increases, and the relative diameter of the tangential firing becomes larger. Because the over fire air （OFA） laid out near the wall has a powerful penetration, the relative diameter of the tangential firing on the section of the OFA is very little, but the average turbulence magnitude is great. When the velocity pressure ratio of the OFA to the primary air POFA/p1 increases, the relative diameter of the tangential firing on the section of the OFA grows little, the average turbulence magnitude becomes larger and the penetration of the OFA becomes more powerful.     

Flash-lamp annealing of semiconductor materials—Applications and process models

Flash-lamp annealing (FLA) on a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The process imposes time varying through-thickness temperature profiles on the substrates being processed, and consequently thermal stresses. A combined thermal and optical model has been developed to predict the substrate temperature distribution and this model has been linked to a structural model to compute stresses and deflections. The paper shows how these models can be used to explore process conditions in flash lamp annealing, with particular regard to the annealing of ion implants in silicon and the crystallization of amorphous silicon layers on glass substrates.     

晶体硅薄膜电池制备技术及研究现状

晶体硅薄膜太阳电池近些年来得到广泛的研究和初步的商业化探索。根据所采用的晶体硅薄膜沉积工艺中温度范围的不同，晶体硅薄膜电池研究可分为高温路线和低温路线两个不同发展方向。本文分别从这两个方向综述了目前国外晶体硅薄膜电池制备技术的最新进展，最新实验室研究结果。报导了晶体硅薄膜电池商业化进展状况，指出了晶体硅薄膜电池实现产业化必须解决的问题。