山西铝厂锅炉水冷壁膨胀异常原因分析及对策

针对山西铝厂160t／h锅炉在实际运行中膨胀异常的问题，对不同的施工方法下，水冷壁膨胀量是否正常这一问题进行分析，找出了水冷壁膨胀异常的原因，并提出了解决对策。     

Evaluation of Slow Crack Growth Resistance in Ceramics for High-Temperature Applications

The slow (subcritical) crack growth (SCG) resistance of Si₃N₄ and SiC ceramics has been evaluated by a stepwise loading test on bending bars precracked by Vickers indentation. Three highly refractory materials were selected for the evaluation: i.e., (1) high-purity Si₃N₄ sintered by hot isostatic pressing (HIP) without additives and (2,3) α - and β - SiC pressureless sintered with B and C addition. Under the hypothesis of linear elastic behavior at high temperature, which was found satisfied in the present materials, the SCG resistance was expressed in terms of initial stress intensity factor critical for SCG failure within a predetermined lifetime. The present method was found useful in shortening the testing time and consistent with other traditional fatigue tests (e.g., static-fatigue test): It is recommended as a screening test for materials under research and development. Among the materials tested in the present study, the highest SCG resistance up to 1440°C was found in the high-purity Si₃N₄ without additives.     

Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs

The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D’s standard user interface.     

Crystallization of Polymer-Derived Silicon Carbonitride at 1873 K under Nitrogen Overpressure

The chemical stability of an amorphous silicon carbonitride ceramic, having the composition 0.57SiC·0.43Si₃N₄·0.49C is studied as a function of nitrogen overpressure at 1873 K. The ceramic suffers a weight loss at p _N2 < 3.5 bar (1 bar = 100 kPa), does not show a weight change from 3.5 to 11 bar, and gains weight above 11 bar. The structure of the ceramic changes with pressure: it is crystalline from 1 to 6 bar, amorphous at ∼10 bar, and is crystalline above ∼10 bar. The weight-loss transition, at 3.5 bar, is in excellent agreement with the prediction from thermodynamic analysis when the activities of carbon, SiC, and Si₃N₄ are set equal to those of the crystalline forms; this implies that the material crystallizes before decomposition. The amorphous to crystalline transition that occurs at ∼10 bar, and which is accompanied by weight gain, is likely to have taken place by a different mechanism. A nucleation and growth reaction with the atmospheric nitrogen is proposed as the likely mechanism. The supersaturation required to nucleate α-Si₃N₄ crystals is calculated to be 30 kJ/mol.     

中国冷库的现状与发展趋势

本文从的设计建造、制冷工艺和管理维护这三个方面，介绍了近三年来中国冷库的现状，说明中国冷库正朝着灵活、自动化、节能和环保的方向进一步发展。     

Amorphous chromium silicide formation in hydrogenated amorphous silicon

The interaction between thin films of hydrogenated amorphous silicon and sputter-deposited chromium has been studied. Following deposition of the chromium films at room temperature, the films were annealed over a range of times and temperatures below 350°C. It was found that an amorphous silicide was formed only a few nanometers thick with the square of thickness proportional to the annealing time. The activation energy for the process was 0.55±0.05 eV. The formation process of the silicide was very reproducible with the value of density derived from the thickness and Cr surface density being close to the value for crystalline CrSi₂ for all films formed at temperatures ≤300°C. The specific resistivity of the amorphous CrSi₂ was ≈600 μΩ·cm and independent of annealing temperature.     

激光法合成SiC超细粉末物理化学过程的研究——Ⅰ.实验规律及粉末特性

用50W连续波CO_2激光器为热源,诱发SiH_4和C_2H_4反应,合成SiC超细粉末。实验确定了反应腔体内压力p、气源中的C/Si原子比、喷嘴内径2r以及激光功率密度与粉末特性之间的关系,并对合成的产物进行物理、化学表征。     

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted,as-deposited polycrystalline Si-on-single crystal Si diodes

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.     

沈阳太平洋广场空调冷热源方案比较

对一幢１１．５万ｍ＾２的四星级综合建筑的空调冷热源不同的蓄冷和取冷比较了四种方案，论证了其中直燃型溴化锂吸收式冷热水机组供冷供暖、小型燃油锅炉供蒸汽的方案最为合理。     

用发展的Sachs法研究模拟轧辊中的残余应力

对不同辊型，尺寸，材料与加工处理方法的模拟冷轧辊进行了内剥层试验研究，求出了原辊和打中心孔或扩孔后辊内残余应力分布曲线，提出了虚拟打孔法和虚拟剥层法，解决了实心辊中心和空心辊内表层的残余应力的精确测量问题，丰富了Ｓａｃｈｓ内剥层法的内容，机械法打中心孔，热处理前打中心孔，空心辊表淬前改变温度场的方法可降低残余应力值，后者降低残余应力的效果尤为显著。