非晶硅基薄膜的等离子体刻蚀光发射谱检测

本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

a—Si等离子体刻蚀的研究

将等离子体刻蚀应用于非晶硅的刻蚀中,得到边缘整齐、分辩率高、重复性好、图形清晰的满意效果。通过调整工艺条件,可严格控制刻蚀速率。其特点优于湿式化学腐蚀,是一种非晶硅特性研究和器件制造中值得推广和使用的方法。     

基于Ansys的电化学加工辅助阴极设计

根据电化学加工极间间隙电势分布的拉普拉斯方程，提出了一种阴极设计算法－误差调整法。该算法的实现主要采用了Ansys有限元计算软件。计算结果表明：该法计算迭代次数较为适当，对于精度要求不高的电化学加工阴极设计，基于Ansys的辅助阴极设计有效可行。     

碳纤维表面处理对铝电解用硼化钛阴极涂层性能的影响

硼化钛阴极涂层是铝电解用可润湿性阴极材料中的一种，具有优良的抗钠渗透性和对铝液润湿性，可以有效地延长铝电解槽寿命。碳纤维是硼化钛涂层材料的增强剂之一．对硼化钛阴极涂层的性能影响很大。本文研究了不同工艺的液相碳纤维表面氧化处理法对硼化钛阴极涂层抗拉强度和粘接强度的影响。采用PTIR检测碳纤维处理后表面含氧基团的变化，寻找影响硼化钛阴极涂层性能的原因，从而达到最有效地提高TiB2阴极涂层抗拉强度和粘接强度的目的。结果表明，采用工艺(1)(10％HNO3，80℃、恒温5min．超声波、5min)对碳纤维进行表面处理最合理，处理后碳纤维表面含氧基团的含量最高．用其制备硼化钛阴极涂层的抗拉强度、粘接强度最大。     

Chemical States of Lanthanum in Carbonized La2O3-Mo Thermionic Cathode Materials

The chemical reaction between lanthanum oxide and molybdenum carbide was studied by thermodynamic calcu-lation, thermal analysis and in-situ X-ray Photoelectron Spectroscopy. The theoretical results show that at the environment allowing for the evaporation of lanthanum, such as in high vacuum, La2O3 in the La2O3-Mo materials can be reduced to metallic lanthanum by molybdenum carbide (Mo2C). To confirm the conclusion, many analysis methods such as XRD, SPS, and TG-DTA were taken. The experimental results show that the chemical state of lanthanum changes during heat-ing. It was proved, for the first time, that reacted metallic lanthanum appears at the surface of this kind of material at high temperature.     

硅中硼离子注入校准样品的研制

本文主要介绍了硅中硼离子注入校准样品的制备与研究。分别用三台SIMS仪器对样品进行了深度剖析与比对,并对用作校准目的的样品主要参数进行了定值。     

Formation of titanium and cobalt germanides on Si (100) using rapid thermal processing

Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid thermal annealing in either Ar or N₂ ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The sheet resistance was found to be dependent on annealing ambient (Ar or N₂) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides were found to be 20 μΩ-cm and 35.3μΩ-cm, corresponding to TiGe₂ and Co₂Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti₆Ge₅ phase forms prior to TiGe₂. The TiGe₂ phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures (425° C); however, the stability of the material is poor at elevated temperatures.     

Microstructure of Silicon Carbide Whiskers Synthesized by Carbothermal Reduction of Silicon Nitride

The microstructure of silicon carbide whiskers synthesized by carbothermal reduction of silicon nitride has been studied using transmission electron microscopy. All of the whiskers examined are single crystals, and grow in the (111) crystallographic direction. Two different forms of stacking faults and microtwins were observed; in one the planar defects are normal to the whisker growth direction, and the other has the defect planes at an angle of about 70° to the growth axis, while both forms of the defects are on the [111] closed-packed planes. Without the addition of catalyst, droplets containing metallic impurities were not found at the tips of the whiskers synthesized by the present process. A core and outer regions were observed in the single-crystal whiskers, which may be evidence that the whiskers were formed by a two-stage mechanism.     

10000m^3天然气球罐用WEL—TEN610CF钢焊接冷裂纹敏感性

WEL-TEN610CF钢是日本新日铁公司生产的低裂纹敏感性高强钢,结合我国首台国产化10 000 m3天然气球罐用37 mm厚WEL-TEN610CF钢焊接性试验研究,对该钢焊接冷裂纹敏感性进行了综合评定,为其焊接工艺的制订提供了可靠的依据。