驻极体声传感器及其储电材料的现状

综述了驻极体声传感器及其储电材料近年来的迅猛发展。传统的FEP(tetrafluoroethylene—hexa—fluoropropylene copolymer)极体电容式声传感器及以铁电聚合物PVDF(poly vinylidene fluoride)家族为芯片的声传感器和超声抉能器仍焕发着青春活力。Si基微型驻极体声传感器的理论和实验研究已经日趋成熟，而用空间电荷型多孔聚合物驻极体压电薄膜为芯片可望研制出新一代声电和电声传感器、压力传感器和驱动器。     

Oxidation of Silicon Carbide in Environments Containing Potassium Salt Vapor

At high temperatures in clean oxidizing environments, SiC forms a very protective SiO₂ film, but, in environments containing low levels of gaseous alkali salt contaminants or where condensed salts may deposit on the surface, the resistance of the film is significantly reduced. Oxidation kinetics of SiC were measured by continuous thermogravimetric analysis in a controlled environment containing CO₂, H₂O, and O₂ plus low levels of potassium-containing salts. Potassium was found to be incorporated into the SiO₂ scale and to significantly change its transport properties and its morphology. The rate of scale formation was found to increase directly in proportion to K in the scale. A change in mechanism was observed when water vapor was added to the reacting gas stream.     

Nuclear Magnetic Resonance Studies of Silicon Carbide Polytypes

The ²⁹Si MAS NMR spectra of the 2H, 4H, 6H, and 3C polytypes of silicon carbide are presented. An attempt is made to correlate differences in the chemical shifts with local atomic environment. The results of the analysis of the spectra of pure polytypes are used as a basic for the interpretation of the spectra of mixed polytypes and a discussion of the crystallinity and impurity levels of different samples. Carbon-13 chemical shifts obtained from spectra of the same polytypes are also tabulated.     

A Silicon–Silica Nanocomposite Material

The synthesis and characterization of a novel silicon–silica nanocomposite material are reported. A self‐assembly method allows the encapsulation of silicon nanoclusters within the channels of a periodic mesoporous silica thin film. The result is the formation of a silicon–silica nanocomposite film with bright, room‐temperature photoluminescence in the visible range, and a nanosecond luminescence lifetime. The properties of the nanocomposite material have been studied by several analytical techniques, which collectively show the existence within the channels of non‐diamondoid‐structure‐type silicon nanoclusters with various hydrogenated silicon sites. It is estimated that the silicon nanoclusters in the silica mesoporous films occupy up to 39 % of the accessible pore volume. The nanocomposite film shows improved resistance to air oxidation compared to crystalline silicon. The high loading and chemical stability to oxidation under ambient conditions are important advantages in terms of the development of silicon‐based light‐emitting diodes from this class of materials.     

轧后穿水冷却工艺对棒材组织性能的影响

针对轧机产量提高后冷床冷却能力不足的问题 ,研制开发了棒材轧后穿水冷却技术。通过对小规格 2 0MnSiV热轧带肋钢筋进行轧后穿水冷却 ,钢材上冷床温度降低了 90～ 110℃ ,提高了产品质量 ,改善了各项力学性能 ,抗拉强度平均提高了 3 5～ 40MPa ,钢材性能合格率由 97.5 %提高到了 99.6% ,解决了冷床冷却能力不足、制约生产的瓶颈问题。     

水上地震折射互换法误差分析

在理论上，用源检互换的方法进行折射地震勘探是没有误差的，在某些特殊条件下无法铺设检波器而又必须进行折射地震勘探时它也是唯一的选择，然而，在实际工作中，由于各种因素的影响，其误差是不可忽略的。为此，本文从地震折射运动学的角度对水上地震折射互换法因过河钢丝绳的重量、水的流速和流向、炮点深度等客观因素造成的解释误差进行了分析，揭示了水上地震折射互换法应注意的问题。这对水上地震折射互换法的资料解释进行误差校正提供了理论基础。     

一种基于像素自适应仲裁的OSD分层混合结构设计

数据混合是OSD分层显示的关键技术之一.本文基于OSD的分层结构及数据组织结构特点,提出一种OSD分层显示的单混合结构,该结构采用基于像素自适应仲裁的策略,按照层优先级次序,对多个OSD图层信号实时地切换显示.FPGA验证结果表明,该结构在满足OSD分层混合显示、实现菜单选择鼠标控制等高级人机对话功能的前提下,其硬件资源开销比多混合结构节省约33%以上,且具有良好的层次可扩展性和操作灵活性.     

Influence of deposition parameters on hole mobility in polymorphous silicon

Time-of-flight transient photoconductivity measurements reveal a monotonic increase with the deposition pressure in the hole mobility in polymorphous silicon for samples deposited under hydrogen dilution. With helium dilution, a maximum mobility that matches the highest value from H-dilution samples is measured at the intermediate pressure of 1.4 Torr. The deposition rate of those samples is twice the rate for the H-dilution ones. For the samples with the best hole mobilities, the valence-band tail is comparable to the one of standard hydrogenated amorphous silicon.     

Synthesis of silicon oxynitride by infiltration-mediated combustion

Silicon oxynitride Si₂N₂ O was synthesized from a mixture of Si, SiO₂, and Si₃N₄ by infiltrationmediated combustion in nitrogen gas. The chemical/phase composition of product and process parameters (temperature and burning velocity) were studied upon variation in charge composition and initial pressure of gas reagent. Parameters of the reaction yielding single-phase Si₂N₂O have been optimized.      

Suppression of photo-induced dilation in cyanide treated hydrogenated amorphous silicon films

Effects of cyanide (CN) treatment with hydrogenated amorphous silicon (a-Si:H) films have been investigated. The decrease of ΔV/V was observed in cyanide treated a-Si:H films and the successive thermal annealing at 200°C after CN treatment induced the further reduction of the ΔV/V. XPS spectra show the indirect evidence that the cyanide species is present within 10 nm from the hydrogenated amorphous silicon surface. The results of CN treatment with a-Si:H solar cells are demonstrated.