Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high‐efficiency solar cells

Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer‐growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect‐management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled to effective control of fast‐diffusing species during cell processing, is critical to enable high cell efficiencies. To accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection‐dependent lifetime measurements. Copyright © 2015 John Wiley & Sons, Ltd.     

“In‐field” cell temperature evaluation in solar modules through time‐dependent open circuit voltage measurements

A method for the evaluation of p–n junction cell temperature in PV modules operating in the maximum power point (MPP) mode has been proposed. The method does not require specialized equipment and (for the concentrator modules) the data on the open circuit (OC) voltage temperature coefficients measured under pulse illumination. It consists of measuring several open circuit voltage magnitudes together with temperature measurements on the external module surface near one of the cells. In this procedure, a fast transition from MPP to OC operational mode is carried out, during which a time‐dependent voltage measurement is carried out with the help of a memory oscilloscope. A “reference” OC voltage magnitude in a “cold” module (a condition, as if the cells are kept at ambient temperature) is obtained by calculations, so that there is no necessity in a fast mechanical shuttering of the module aperture area. In the case of the concentrator modules, the module OC voltage temperature coefficient can be measured, if heat sinking process is artificially modified during outdoor measurements. Copyright © 2015 John Wiley & Sons, Ltd.     

Concept and demonstration of an intermediate band tandem device for solar energy conversion

We have realized a tandem solar cell design that combines a pin‐junction with a photovoltaic intersubband absorber. This concept allows harvesting light in the visible range and the near‐ and mid‐infrared at the same time, and theoretically, energy conversion efficiencies beyond the Shockley–Queisser‐limit could be achieved. A test structure was grown, and the operation of this concept could be confirmed, in principal with an optical two‐beam experiment. The basic characteristics of the device can be explained with an equivalent circuit design that consists of three individual cells, and we find an obvious analogy to the concept of the intermediate band solar cell with noteworthy advantages at some points. Our results show, that for a working device it is crucial to adjust the properties of the photovoltaic intersubband absorber for optimal charge separating performance at the working point of the solar cell. Copyright © 2015 John Wiley & Sons, Ltd.     

Current transport studies of amorphous n/p junctions and its application in a‐Si:H/HIT‐type tandem cells

This paper presents an understanding of the fundamental carrier transport mechanism in hydrogenated amorphous silicon (a‐Si:H)‐based n/p junctions. These n/p junctions are, then, used as tunneling and recombination junctions (TRJ) in tandem solar cells, which were constructed by stacking the a‐Si:H‐based solar cell on the heterojunction with intrinsic thin layer (HIT) cell. First, the effect of activation energy (E_a) and Urbach parameter (E_u) of n‐type hydrogenated amorphous silicon (a‐Si:H(n)) on current transport in an a‐Si:H‐based n/p TRJ has been investigated. The photoluminescence spectra and temperature‐dependent current–voltage characteristics in dark condition indicates that the tunneling is the dominant carrier transport mechanism in our a‐Si:H‐based n/p‐type TRJ. The fabrication of a tandem cell structure consists of an a‐Si:H‐based top cell and an HIT‐type bottom cell with the a‐Si:H‐based n/p junction developed as a TRJ in between. The development of a‐Si:H‐based n/p junction as a TRJ leads to an improved a‐Si:H/HIT‐type tandem cell with a better open circuit voltage (V_oc), fill factor (FF), and efficiency. The improvements in the cell performance was attributed to the wider band‐tail states in the a‐Si:H(n) layer that helps to an enhanced tunneling and recombination process in the TRJ. The best photovoltage parameters of the tandem cell were found to be V_oc = 1430 mV, short circuit current density = 10.51 mA/cm², FF = 0.65, and efficiency = 9.75%. Copyright © 2015 John Wiley & Sons, Ltd.     

Interdigitated back‐contact heterojunction solar cell concept for liquid phase crystallized thin‐film silicon on glass

We present an interdigitated back‐contact silicon heterojunction system designed for liquid‐phase crystallized thin‐film (~10 µm) silicon on glass. The preparation of the interdigitated emitter (a‐Si:H(p)) and absorber (a‐Si:H(n)) contact layers relies on the etch selectivity of doped amorphous silicon layers in alkaline solutions. The etch rates of a‐Si:H(n) and a‐Si:H(p) in 0.6% NaOH were determined and interdigitated back‐contact silicon heterojunction solar cells with two different metallizations, namely Al and ITO/Ag electrodes, were evaluated regarding electrical and optical properties. An additional random pyramid texture on the back side provides short‐circuit current density (j_SC) of up to 30.3 mA/cm² using the ITO/Ag metallization. The maximum efficiency of 10.5% is mainly limited by a low of fill factor of 57%. However, the high j_SC, as well as V_OC values of 633 mV and pseudo‐fill factors of 77%, underline the high potential of this approach. Copyright © 2015 John Wiley & Sons, Ltd.     

Ultrathin PECVD epitaxial Si solar cells on glass via low‐temperature transfer process

Fabrication of high‐quality ultrathin monocrystalline silicon layers and their transfer to low‐cost substrates are key steps for flexible electronics and photovoltaics. In this work, we demonstrate a low‐temperature and low‐cost process for ultrathin silicon solar cells. By using standard plasma‐enhanced chemical vapor deposition (PECVD), we grow high‐quality epitaxial silicon layers (epi‐PECVD) from SiH₄/H₂ gas mixtures at 175 °C. Using secondary ion mass spectrometry and transmission electron microscopy, we show that the porosity of the epi‐PECVD/crystalline silicon interface can be tuned by controlling the hydrogen accumulation there. Moreover, we demonstrate that 13–14% porosity is a threshold above which the interface becomes fragile and can easily be cleaved. Taking advantage of the H‐rich interface fragility, we demonstrate the transfer of large areas (∽10 cm²) ultrathin epi‐PECVD layers (0.5–5.5 µm) onto glass substrates by anodic bonding and moderate annealing (275–350 °C). The structural properties of transferred layers are assessed, and the first PECVD epitaxial silicon solar cells transferred on glass are characterized. Copyright © 2016 John Wiley & Sons, Ltd.     

Through‐the‐glass spectroscopic ellipsometry for analysis of CdTe thin‐film solar cells in the superstrate configuration

Polycrystalline CdS/CdTe thin‐film solar cells in the superstrate configuration have been studied by spectroscopic ellipsometry (SE) using glass side illumination. In this measurement method, the first reflection from the ambient/glass interface is rejected, whereas the second reflection from the glass/film‐stack interface is collected; higher order reflections are also rejected. The SE analysis incorporates parameterized dielectric functions ε for solar cell component materials obtained by in situ and variable‐angle SE. In the SE analysis of the complete cells, a step‐wise procedure ranks the fitting parameters, including thicknesses and those defining the spectra in ε, according to their ability to reduce the root‐mean‐square deviation between the simulated and measured SE spectra. The best fit thicknesses from this analysis are found to be consistent with electron microscopy. Based on the SE results, the solar cell quantum efficiency (QE) can be simulated without any free parameters, and comparisons with measured QE enable optical model refinements as well as identification of optical and electronic losses. These capabilities have wide applications in photovoltaic module mapping and in‐line monitoring. Copyright © 2016 John Wiley & Sons, Ltd.     

InGaP//GaAs//c‐Si 3‐junction solar cells employing spectrum‐splitting system

In this work, we practically demonstrated spectrum‐splitting approach for advances in efficiency of photovoltaic cells. Firstly, a‐Si:H//c‐Si 2‐junction configuration was designed, which exhibited 24.4% efficiency with the spectrum splitting at 620 nm. Then, we improved the top cell property by employing InGaP cells instead of the a‐Si:H, resulting in an achievement of efficiency about 28.8%. In addition, we constructed 3‐junction spectrum‐splitting system with two optical splitters, and GaAs solar cells as middle cell. This InGaP//GaAs//c‐Si architecture was found to deliver 30.9% conversion efficiency. Our splitting system includes convex lenses for light concentration about 10 suns, which provided concentrated efficiency exceeding 33.0%. These results suggest that our demonstration of 3‐junction spectrum‐splitting approach can be a promising candidate for highly efficient photovoltaic technologies. Copyright © 2016 John Wiley & Sons, Ltd.     

EPDM基低发射低反射涂料的制备及其性能

以红外透明的三元乙丙橡胶(EPDM)为基料,通过优化金属颜料的种类、掺量、形貌及粒度,制备了EPDM/Cu,EPDM/Al,EPDM/Ni及EPDM/Cu-Al等低发射低反射涂料.对上述4种涂料所制成的涂层进行红外发射率和反射率测试,并采用红外光谱仪进行化学结构表征,从涂层发射率、反射率及化学结构等角度分析了涂层低发射低反射的形成机理.结果表明:EPDM/Cu粉和EPDM/Al粉涂层的红外发射率达0.33~0.40,太阳能反射率达0.38~0.53,它们均具备低发射低反射性能.通过模拟寒冷地区环境,对EPDM基低发射低反射涂层进行保温特性测试,发现EPDM/Cu粉涂层平衡时相对温降达4℃,保温效果良好.     

太阳能-空气源热泵耦合式沼气池加温系统设计

针对8 m3沼气发酵池设计了一套空气源热泵-太阳能耦合式加温系统,可以根据不同天气切换运行太阳能、太阳能空气源热泵和空气源热泵3种热源模式,以满足沼气池内的加温需求。计算了沼气池加温系统的热负荷,将该系统与电热膜加温系统和地源热泵系统进行了比较,可以分别增加投资效益净现值11866.9元和4726.7元,多投资部分的投资回收期分别为8年和4年。可见,对于小型沼气池工程,采用空气源热泵辅助太阳能热水系统,从节能性与经济性来讲,是一种适宜推广的热源形式。