MoNoC: A monitored network on chip with path adaptation mechanism

Complex systems on chip containing dozens of processing resources with critical communication requirements usually rely on the use of networks on chip (NoCs) as communication infrastructure. NoCs provide significant advantages over simpler infrastructures such as shared busses or point to point communication, including higher scalability, more efficient energy management, higher bandwidth and lower average latency. Applications running on NoCs with more than 10% of bandwidth usage attest that the most significant portion of message latencies refers to buffered packets waiting to enter the NoC, whereas the latency portion that depends on the packet traversing the NoC is sometimes negligible. This work presents an adaptive routing architecture, named Monitored NoC (MoNoC), which is based on a traffic monitoring mechanism and the exchange of high priority control packets. This method enables to adapt paths by choosing less congested routes. Practical experiments show that the proposed path adaptation is a fast process, enabling to transmit packets with smaller latencies, up to 9 times smaller, by using non-congested NoC regions.     

基于MAX+PLUSII模块化设计的智力竞赛抢答器

设计了一款造价低,体积小,操作简单,适用性广的抢答器。该抢答器是基于MAX+PLUSII软件,在FPGA芯片上设计的,可实现多人智力竞赛抢答。     

离网型太阳能光伏发电系统设计研究

离网型太阳能光伏发电系统是太阳能光伏发电系统的重要组成。它具有灵活度高、分布广、项目成本低等优点。本文主要对现有离网光伏发电系统设计过程进行分析。     

基于双CPU的太阳能跟踪系统的研究

从提高太阳能电池板的输出功率出发,提出了基于双CPU控制方式的太阳能跟踪系统。系统采用俯仰-水平双轴控制,以单片机STC12C2052AD为光电控制单元的核心处理器,以混合式步进电机为执行机构,以TMS320F2812为核心控制器件的三相正弦波细分驱动器实现了混合式步进电机的精确定位。实验表明系统运行稳定,具有很高的实用价值。     

Intergranular oxidation of silicon in 20Cr-25Ni niobium-stabilized stainless steel at 1140–1230 K

The kinetics of intergranular oxidation of silicon in a 20Cr-25Ni Nb-stabilized stainless steel are reported, at temperatures in the range 1140–1230 K, in CO₂ at 40 bar pressure. The depth of attack increased parabolically with respect to time, with an activation energy of 335±30 kJ/mol. The mechanism of growth is discussed in terms of classical internal-oxidation theories, and an alternative explanation based on an available-space theory is developed. The internal oxidation rates in a number of different alloys are compared with diffusivities of metals in the base alloy. It is proposed that intergranular oxidation in the 20–25 Nb steel is controlled by the rate of outward diffusion of iron or chromium in the alloy.     

Evolution of insoluble eutectic Si particles in anodic oxidation films during adipic-sulfuric acid anodizing processes of ZL114A aluminum alloys

The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were in-vestigated by optical microscopy (OM) and scanning electron microscopy (SE...     

Recent progress of CERN RD50 Collaboration

The objective of the CERN RD50 Collaboration is to develop radiation hard semiconductor detectors for very high luminosity colliders, in particular, for the upgrade of the large hadron collider （LHC） which itself is scheduled to be operational in 2007. The approach of the RD50 has two major research lines, material engineering and device engineering. These are further subdivided into projects covering defect characterization and engineering, new detector materials, detector characterization, new detector structures and full detector systems. Presently, 264 members from 53 institutes are actively participating in the RD50 Collaboration. Detectors made of defect engineered substrates, e.g. high resistivity magnetic Czochralski （MCz-Si）, epitaxial silicon （Epi-Si） on Czochralski silicon （Cz-Si） substrate, intentionally thermal donor （TD） compensated p-type MCz-Si and oxygen enriched （DOFZ） silicon, have been demonstrated by the RD50 Collaboration. An overview and highlights of the results of these defect engineering techniques were given in this report.     

Solar furnace surface treatment of plasma-sprayed thermal barrier coatings

An original process of superficial thermal treatment is described. This process has been successfully applied to partially stabilized yttria-zirconia coatings (ZrO₂-Y₂O₃) to increase the lifetime of the thermal barriers. A thin superficial layer was melted, and morphological transformations were observed. A microstructural comparison between as-sprayed layers and thermally treated layers is presented.     

Preparation and characterization of TiO2 photoelectrode codoped with aluminum and boron and its application in dye-sensitized solar cell

Nanocrystalline titania films codoped with aluminum and boron were prepared by cathodic vacuum arc deposition. In the process, titanium alloy target was used under an O2/Ar atmosphere, and sensitization of films were carried out by natural dye-sensitized complex in anhydrous ethanol. The structure, surface morphology and UV-vis spectra of titania films codoped were measured by X-ray diffraction analysis, scanning electron microscopy and ultraviolet-visible spectrometer. Theas-deposited films are found to be amorphous. The films annealed were examinedto be of anatase structure with orientation along the (101) planes, the averagecrystal size is in the range between 41 and 45 nm. SEM results show that thereare some pores in the codoped titania films, the optical properties of the dye-sensitized films were also measured which reveals that the spectral responses of films shift to the visible region. Under simulated sunlight illumination, the overall energy conversion efficiency of dye-sensitized nanocrystalline solar cell is 0.9%.     

High-temperature oxidation of SiC in a glow-discharge oxygen plasma

The oxidation kinetics and structure of the oxide scales formed on high-density SiC were studied in molecular oxygen at 740 Torr and in a glow-discharge oxygen plasma at 0.1 Torr at temperatures of 1000, 1100, and 1200°C. The monatomic oxygen formed by the glow discharge markedly increased the reaction rate and the vaporization of some of the oxidation products. The marked differences in kinetics suggest that the rate-controlling step during oxidation in molecular oxygen is the dissociation of adsorbed diatomic oxygen to the monatomic species. Films formed in molecular oxygen were mostly amorphous SiO₂ with small inclusions of SiC and graphite, whereas films formed in dissociated oxygen were primarily amorphous SiO₂ containing SiO, S₂O₃, and the coesite form of SiO₂.