激光法合成SiC超细粉末物理化学过程的研究——Ⅰ.实验规律及粉末特性

用50W连续波CO_2激光器为热源,诱发SiH_4和C_2H_4反应,合成SiC超细粉末。实验确定了反应腔体内压力p、气源中的C/Si原子比、喷嘴内径2r以及激光功率密度与粉末特性之间的关系,并对合成的产物进行物理、化学表征。     

光催化氧化后四环素的分解率与COD去除率之间关系的探讨

以粉状无机半导体（ＺｎＯ）为催化剂，探讨了水溶液中四环素经光催化氧化分解率和ＣＯＤ去除率之间的关系。实验表明，在本实验中四环素的分解率和ＣＯＤ去除率之间有较好的正相关性。当反庆系统中有足量的活性催化剂和足够的光照时间时，绝大部分四环素将被较彻底地氧化分解成ＣＯ２，这不仅有助于光催化反应机理的研究，助于今后在环保中的实际应用。     

片式阻容元件的现状和发展方向

在国外的片式元器件（ＳＭＤ）中，片式阻容元件发展最快，主要表现为片式化率迅速上升，尺寸越来越小，性能越来越好，包装形式多样化和生产管理不断改进。本文综述了国外阻容元件在这些方面的进展，指出了我国的差距，提出了我国如何发展的措施。     

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted,as-deposited polycrystalline Si-on-single crystal Si diodes

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.     

太阳能热水器内表面电刷镀锌

用电刷镀的方法,对尺寸为2000mm×1000mm×0.8mm 的 A_3钢板电刷镀锌保护层;并对影响镀锌层质量的因素进行了充分的研究。     

Flexible and light weight copper indium diselenide solar cells on polyimide substrates

Thin film flexible CuInSe₂ (CIS) solar cells have been fabricated for the first time on light-weight polymeric substrates. Evaporated Cu---In alloy precursors were selenized in H₂Se atmosphere at around 400°C to grow the CIS absorber layers. Low temperature techniques which are compatible with the polymeric substrates were used to deposit the window layers of CdS and ZnO. The demonstrated active area conversion efficiency of 9.3% makes this light-weight device very attractive for many terrestrial and space power generation applications where high specific power and mechanical flexibility are needed.     

非晶硅基薄膜的等离子体刻蚀光发射谱检测

本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。     

Heat and Moisture Transfer in Wet Sand Exposed to Solar Radiation—Models and Experiments Concerning Buried Objects

One promising method of locating buried objects, such as land mines, is to use optical systems for detecting contrasts in surface temperature. With enhanced knowledge about the interacting physical processes behind these temperature contrasts, it is possible to improve detection precision. In such a context, moisture movement in the soil and moisture evaporation from the surface have been found to be of particular interest. This study was based on indoor experiments on wet and dry sand exposed to radiation from a solar panel. Simulations of heat and moisture transfer conducted with a one-dimensional model are also presented for the experiments. The calculations were successful in accurately predicting surface temperatures for both wet and dry sand, making it possible to predict surface temperatures under different conditions. These findings will contribute to increasing the probability of successful detection of buried objects under real conditions using optical methods.     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

a—Si等离子体刻蚀的研究

将等离子体刻蚀应用于非晶硅的刻蚀中,得到边缘整齐、分辩率高、重复性好、图形清晰的满意效果。通过调整工艺条件,可严格控制刻蚀速率。其特点优于湿式化学腐蚀,是一种非晶硅特性研究和器件制造中值得推广和使用的方法。