基于c-Si(P)衬底的a-Si/c-Si异质结模拟研究

本文中研究了影响 a-Si/c-Si 异质结界面复合的主要因素： 表面固定电荷 ,缺陷态载流子俘获界面： ,以及界面缺陷态密度 。当缺陷能级 接近c-Si本征能级,且 满足时,缺陷态复合中心复合速度达到最大。AFORS-HET 软件模拟显示, a-Si/c-Si界面能带不连续显著影响电池Voc、界面缺陷态密度大于1*1010 cm-2.eV-1时,界面态密度的增加会严重降低电池Voc,但其对电池电流密度影响不大。对于c-Si (P)/a-Si (P ) 结构异质结,C-Si衬底的势垒 和a-Si材料内的势垒 对降低c-Si (P)/a-Si (P ) 结构的接触电阻和界面复合速度,表现各不相同。     

A Multifunctional Blue‐Emitting Material Designed via Tuning Distribution of Hybridized Excited‐State for High‐Performance Blue and Host‐Sensitized OLEDs

Actualizing full singlet exciton yield via a reverse intersystem crossing from the high‐lying triplet state to singlet state, namely, “hot exciton” mechanism, holds great potential for high‐performance fluorescent organic light‐emitting diodes (OLEDs). However, incorporating comprehensive insights into the mechanism and effective molecular design strategies still remains challenging. Herein, three blue emitters (CNNPI, 2TriPE‐CNNPI, and 2CzPh‐CNNPI) with a distinct local excited (LE) state and charge‐transfer (CT) state distributions in excited states are designed and synthesized. They show prominent hybridized local and charge‐transfer (HLCT) states and aggregation‐induced emission enhancement properties. The “hot exciton” mechanism based on these emitters reveals that a balanced LE/CT distribution can simultaneously boost photoluminescence efficiency and exciton utilization. In particular, a nearly 100% exciton utilization is achieved in the electroluminescence (EL) process of 2CzPh‐CNNPI. Moreover, employing 2CzPh‐CNNPI as the emitter, emissive dopant, and sensitizing host, respectively, the EL performances of the corresponding nondoped pure‐blue, doped deep‐blue, and HLCT‐sensitized fluorescent OLEDs are among the most efficient OLEDs with a “hot exciton” mechanism to date. These results could shed light on the design principles for “hot exciton” materials and inspire the development of next‐generation high‐performance OLEDs.     

碱金属掺杂SnO2材料的电子结构和光学性质

文章基于第一性原理研究了碱金属掺杂的SnO2的能带结构以及态密度.研究结果表明:掺杂能够使能级增多,很好地调节带隙值.Li,Na,K,Rb掺杂的SnO2材料,价带顶有能级穿过费米线,材料呈现出半导体特性.其中Rb掺杂使材料在费米面附近产生杂质能级.而Cs,Fr掺杂的SnO2材料,价带顶向低能级方向移动,费米能级不再穿过价带,费米线附近出现轨道杂化,两者相比Fr掺杂使费米面附近能级分布更加离散.掺杂后SnO2的反射率变化主要体现在可见光以及紫外区域,吸收边发生了红移,对实现SnO2光催化起很大作用.     

Energetic distribution of interface states extracted from photo-conductance of organic thin film transistors

In this paper, a new method is introduced to obtain the energetic distribution of the interface states (density of states; DOS) extracted from the photo-conductance of organic thin film transistors (OTFTs) which exhibit varied transfer characteristics under illumination with different photon energies. The method was applied to pentacene OTFTs, and the results were compared with existing data. The major findings were not only the existence of the well-known peaks of DOS at 1.82 eV (free exciton of pentacene), and at 1.49 eV (extrinsic exciton due to dihydropentacene) but also new peaks were found at 1.25 eV, 1.29 eV, 1.31 eV, and 1.35 eV in the mid-gap. The new peaks were strongly enhanced under exposure to oxygen, and thus seem to be related to the defects associated with the presence of oxygen.     

用800nm表面态方法和低温方法结合吸收区的半导体可饱和吸收镜实现掺钛蓝宝石激光克尔镜锁模

研制了一种新型的80 0 nm布拉格反射镜型半导体可饱和吸收镜,其吸收区是低温方法和表面态方法相结合.用该吸收体实现了氩离子激光器泵浦的掺钛蓝宝石激光器被动锁模,脉冲宽度达到4 0 fs,光谱带宽为5 6 nm,后者意味着它可以支持2 0 fs的锁模.脉冲序列的重复率为97.5 MHz,泵浦源为4 .4 5 W下平均输出功率为30 0 m W.     

β-FeSi_2(n)/c-Si(p)HIT型太阳能电池的模拟与优化

运用afors-het软件对β-FeSi2(n)/a-Si(i)/c-Si(p)结构的太阳能电池进行模拟,依次讨论了本征层、发射层、界面态对电池性能的影响。结果表明:添加本征层电池性能提高,但随着本征层厚度的增加载流子收集率下降、串联电阻增大,造成电池光电转化效率下降;发射层厚度的增加使得载流子的收集率下降造成光电转化效率下降,同时发射层掺杂浓度增大虽然使得内建电场强度增大,但载流子的复合也会加大,最终使得电池性能保持稳定;界面态使得电池性能下降,为使电池获得较好性能,界面态密度应尽可能小于1011 cm–2·e V–1。通过优化,最终使得该结构的太阳能电池光电转化效率达到17.00%。     

激发相干态及其叠加态与二能级原子的作用研究

本文研究了光场初态为激发相干态或其叠加态时强度耦合Jaynes－Curnmings模型的动力学演化。对原子反转以及光场的反聚束效应进行了讨论．     

Effect of GaAs surface pretreatment on electrical properties of MBE-ZnSe/GaAs substrate interfaces

Interface properties of MBE-grown ZnSe/GaAs substrate systems formed on variously pretreated GaAs surfaces, which include standard chemically etched (5H₂SO₄:1H₂O₂: 1H₂O), (NH₄)₂S_x-, NH₄I-, and HF-pretreated surfaces, are investigated by capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements. A HF-pretreated and annealed ZnSe/p-GaAs sample showed marked reduction of interface state density, N_ss, with N_ss,_min below 4 x 10¹¹cm^-2 eV^-1 near E_c- E_FS= 1.0 eV. The value is about one order of magnitude smaller than that of the standard chemically etched interface, and comparable to (NH₄)₂S_x- pretreated interface. Nevertheless, C-V characteristics of ZnSe/nGaAs samples, which were measured for the first time, indicate that interface Fermi level, E_FS, is not completely unpinned due to the interface states located above the midgap. A consistent result was obtained by DLTS method in determining E_FS position. The influence of N_ss distribution on vertical current conduction is also analyzed. It is found that U-shaped interface states with N_ss(E) > 1 x 10¹³ cm^-2 eV^-1 above the midgap may cause an excess voltage drop larger than a few volts at the interface.     

二项式叠加态与激发相干叠加态的产生

考虑原子与腔场在大失谐悟上的相互作用，本文研究了如何利用态选择测量技术来产生二项式叠加态和激发相干叠加态，这两种量子加态在一定极限或参数选择下都可变成客观可区分量子叠加态。     

液体脉冲爆震发动机对某火箭弹的姿态控制

着重分析了某火箭弹的起始扰动和外弹道飞行的扰动因素，通过建立空间的姿态测量系统仿真模型，对弹体起始扰动阶段的各个姿态量进行数值模拟。对火箭弹未加液体脉冲爆震发动机和加装液体脉冲爆震发动机的前后进行仿真比较，从而得出液体脉冲爆震发动机对火箭弹的姿态控制的重要作用。