锆酸铅薄膜的生长特性与表面化学态

以醋酸铅和异丙醇锆为原料，乙二醇甲醚为溶剂。通过溶胶-凝胶法和快速退火工艺在Pt(111)／Ti／SiO2／Si(100)基片成功地制备出不开裂的钙钛矿PbZrO3薄膜。用XRD和原子力显微镜测量了薄膜随退火温度变化的结构和表面形貌特征，用XPS测试了650℃退火PbZrO3薄膜的表面化学态。     

硫化物钝化对InAs纳米线光学特性的影响

针对InAs纳米线表面氧化造成的发光效率低的问题,采用十八硫醇和硫化铵钝化了由化学气相沉积设备生长的闪锌矿结构的InAs纳米线。对硫化物钝化前后的InAs纳米线进行温度依赖的光致发光光谱测试。实验结果表明,十八硫醇和硫化铵钝化的InAs纳米线在25 K温度下的发光效率与未钝化的InAs纳米线相比分别提高了～6倍和～7倍,此外,可以在室温下探测到硫化铵钝化的InAs纳米线的光致发光,这为未来基于InAs纳米线的中红外纳米光子器件提供了可能性。     

基于变分法的光子超导波基态分析

利用一般的电磁辐射与晶格振动的相互作用模型，研究了强光场与晶格振动的非线性相互作用导致光子对形成这一基本问题，导出了光子．光子有效相互作用。然后利用变分法求得了超导波态系统的基态能量表达式，并讨论了光子对的形成条件。     

External Stimuli Responsive Liquid‐Infused Surfaces Switching between Slippery and Nonslippery States: Fabrications and Applications

Surfaces with controllable liquid wettability and related functions have gained increasing attention from interfacial scientists due to the high demand of fundamental research and practical applications. Inspired by pitch plant's excellent liquid repellency, external stimuli responsive lubricant‐infused surfaces switching between slippery state and nonslippery state under external stimuli (E‐LIS) have been developed by introducing external stimuli responsive materials as substrates, lubricants, or repellent liquids. This progress report is focused on recent development of E‐LIS. First, design strategy and fabrication of E‐LIS upon external stimuli exposure, including stress, electrical field, magnetic field, and temperature, is summarized. Then, emerging interfacial applications of E‐LIS, such as microreactors, pipetting devices, fog collection devices, and so on, are highlighted. In addition, remaining challenges and future prospects are provided.     

Accurate surface potential determination in Schottky diodes by use of correlated current and capacitance voltage measurements. Application to n–InP

Based on current voltage (I-V_g) and capacitance voltage (C-V_g) measurements, a reliable procedure is proposed to determine the effective surface potential V_d.V_g/ in Schottky diodes. In the framework of thermionic emission, our analysis includes both the effect of the series resistance and the ideality factor, even voltage dependent. This technique is applied to n-type indium phosphide (n-InP) Schottky diodes with and without an interfacial layer and allows us to provide an interpretation of the observed peak on the C-V_g measurements. The study clearly shows that the depletion width and the flat band barrier height deduced from C-V_g, which are important parameters directly related to the surface potential in the semiconductor, should be estimated within our approach to obtain more reliable information.     

纠缠相干态的制备

提出了一个利用单一的二能级原子和处于相干态的腔模来制备Bell型和簇型纠缠相干态的方案。并对这两种纠缠相干态进行了讨论。让一个单一的二能级原子和两个Remsey zones以及两个处于相干态的腔模相互作用,并通过原子测量,就可以在分离的腔中实现Bell型纠缠相干态的制备。通过增加Remsey zones 和腔模就可以制备簇型纠缠相干态。原子和每个腔模的相互作用时间均为 ,其中 是原子和腔的有效耦合常数。最后讨论了方案的实验上的可行性。     

Passivation of Surface and Interface States in AlGaN/GaN HEMT Structures by Annealing

The Ni/AlGaN interfaces in AlGaN/GaN Schottky diodes were investigated to explore the physical origin of post-annealing effects using electron beam induced current (EBIC), current–voltage (I–V) characteristics, and X-ray photoelectron spectroscopy (XPS). The EBIC images of the annealed diodes showed that the post-annealing process reduces electrically active states at the Schottky metal/AlGaN interfaces, leading to improvement of diode performance, for example a decrease in reverse leakage current and an increase in Schottky barrier heights. Pulsed I–V characteristics indicate the Fermi level is up-shifted after annealing, resulting in a larger sheet carrier density at the AlGaN/GaN interface. Unintentional oxidation of the free AlGaN surface during the post-annealing process, revealed by XPS analysis, may prevent electron trapping near the drain-side of the gate edges. We suggest that the post-annealing process under an optimized conditions can be an effective way of passivating AlGaN/GaN heterojunction field-effect transistors.     

基于有效态密度的MOS结构电荷控制模型

从载流子在 MOS结构反型层内的分布出发 ,利用表面有效态密度 ( SLEDOS:SurfaceLayer Effective Density- of- States)的概念 ,在经典理论框架内建立了包含载流子分布对表面势影响的电荷控制模型 .该模型包含了强反型区表面电势的变化对载流子浓度的影响 ,采用了一种新的高效的迭代方法 ,具有较高的计算效率和足够的精度要求     

不同结构CMOS运算放大器电路的电离辐射效应

介绍了在相同工艺条件下 ,N沟和 P沟输入两种不同结构 CMOS运算放大器电路的电离辐照响应规律及各子电路对电特性的影响情况 .结果表明 :由辐照感生的氧化物电荷引起的N沟镜像负载的不对称是导致 P沟输入运放电特性衰降的主要机制 ;而由氧化物电荷和界面态引起的 N沟差分对的漏电增大则是造成 N沟输入运放电路性能变差的主要原因     

Effects of electron- and impurity-ion-LO phonon couples on the impurity states in cylindrical quantum wires

The variational method and the effective mass approximation are used to calculate the phonon effects on the hydrogenic impurity states in a cylindrical quantum wire with finite deep potential by taking both the couplings of the electron-confined bulk longitudinal optical (LO) phonons and the impurity-ion-LO phonons into account.The binding energies and the phonon contributions are calculated as functions of the transverse dimension of the quantum wire. The results show that the polaronic effect induced by the electron-LO phonon coupling and the screening effect induced by the impurity-ion-LO phonon coupling tend to compensate each other and the total effects reduce the impurity binding energies.