可控硅整流系统的设计和运行

介绍了24相可控硅整流电路原理，分析了整流系统的设计和运行情况。     

硅粉混凝土与人居环境

文章简要分析硅粉与硅粉混凝土的性质与性能，从房屋结构，交通环境以及自然环境三个方面论述了硅粉混凝土在人居环境建设中的重要作用，并展望了硅粉混凝土的发展前景。     

A rapid turnaround design of a high speed VLSI search processor

Performance of relational database systems is a major impediment to their use in many applications. We have designed and implemented a customized RISC processor to accelerate associative search and aggregation operations for relational database systems. Since the processor is programmable and supports many queries concurrently, a system utilizing tens of such processors is capable of handling thousands of complex search requests simultaneously.

While the design of a VLSI programmable processor is a complex process, research prototyping requires a fast turnaround design process. We took advantage of the logic programming paradigm and the silicon compiler technology to explore and simulate architecture alternatives prior to the actual implementation. The prototyping process allowed us to complete the chip design in nine months. The resulting processor, fabricated in 2 Itm CMOS technology, consists of 91,000 transistors, executes over 18 million predicate evaluations per second, and searches database contents at 74 megabytes per second.     

多孔硅的发光机理及应用

对多孔硅的发光机理和应用前景作了详细介绍。     

Opportunities in silicon photovoltaics and defect control in photovoltaic materials

Silicon is the dominant semiconductor material in use for terrestrial photovoltaic cells. The critical issues in cell design, materials specification and cell processing are reviewed. Specific attention is given to light trapping, minority carrier lifetime control and novel microstructures for enhancing photon absorption. Relevant topics in generic defect control are discussed with particular emphasis on compound semiconductor materials.     

用时间分辨反射率技术研究硅的固相外延

用时间分辨反射率技术实时测量了Ｓｉ＋、Ａｓ＋注入单晶硅的固相外延生长速率和外延层厚度，并与背散射沟道方法测得的非晶层厚度进行了比较。介绍了测量原理，分析了实验结果．     

Characterization of defects in hydrogenated amorphous silicon devices using charge collection scanning electron microscopy

Electron-beam-induced current (EBIC) and secondary electron image (SEI) modes of a scanning electron microscope (SEM) are utilized for characterization of charge collection inhomogeneities in hydrogenated amorphous silicon devices. These inhomogeneities are due to such fabrication defects as substrate surface roughness, pin holes, blistering and lift-off. SEM observations are correlated with the electrical properties of the devices. Electronirradiation-induced damage in these devices is also investigated by measuring the EBIC time decay at continuous electron irradiation as a function of both the electron -beam energy and current. This decay mechanism is based on the formation of electron-irradiation-induced microscopic defects that act as recombination centers and reduce the lifetime of carriers.     

微硅低密度水泥的现场应用

微粒硅是铁合金生产中的副产品一是一种惰性材料,主要成份是二氧化硅,它具有粒径小,比表面积大的特点,作为水泥外加剂,可降低水泥浆密度。经过室内及现场试验,微硅水泥浆能满足长庆油田低温、低压、易漏地层的固井,并且使洛河层的固井质量大大提高。     

Relaxation of extrinsic and intrinsic stresses in germanium substrates with silicon films

Si films were deposited on Ge substrates at 400°C by two different Physical Vapor Deposition techniques: (A) ion beam sputtering and (B) magnetron sputtering. The intrinsic stresses in the as-deposited films were measured to be compressive and much greater in samples (A), about −1500 to −2000 MPa than in samples (B), about −300 to −500 MPa. The substrates were subsequently exposed to thermal treatments for varying times at 800°C. In the lower stressed (B) samples, the films had relaxed and reduced the overall curvature of the structure whereas in the high stresses (A) samples, an irreversible large increase in the substrate curvature was found to occur. This indicated that plastic deformation in the Ge substrates itself had occurred.     

CMOS单元电路版图的自动设计

本文描述了ＣＭＯＳ单元电路版图自动设计程序是自动电路版图设计系统的一个组成部分，它通过一列变换，将单元电器描述翻译成单元电路版图的几何描述。其特点是允许单元内多端口线网布和允许在单元四周指定端口，并对单元电路版图进行优化，因此，只要输入单元电路描述，便可自动产生单元电路的版图文件。