Structural, electrical and bending properties of transparent conductive Ga-doped ZnO films on polymer substrates

We investigated the characteristics of highly transparent conductive Ga-doped ZnO (GZO) polycrystalline films of 100 nm thickness deposited on glass and polymer substrates. GZO films were deposited by ion plating with dc-arc discharge. We developed multiple-deposition method to obtain various deposition process temperatures lower than 100 °C. Cross-sectional SEM images show that all the GZO films have columnar structure. Analysis of data obtained by XRD measurements shows that all the GZO films with wurtzite structure exhibit highly (002) orientation perpendicular to the substrate. The resistivity of the GZO films deposited on polyester and glass substrates were 5.0 × 10^-4 Ω · cm. The mechanical bending properties of the GZO films were investigated by comparing the sheet resistance determined before and after a bending test with various bending diameters. For the bending diameter of more than 30 mm, all the GZO films exhibited excellent bending properties with no change in sheet resistance. For the bending diameter of less than 20 mm, we found the sheet resistance affected by the bending. We demonstrated that our multiple-deposition method to achieve different controllable polyester substrate temperatures is highly suitable for improving the bending properties of GZO films.     

Preparation of (n) a-Si: H/(p) c-Si heterojunction solar cells

Heterojunction solar cells have been manufactured by depositing n-type a-Si: H on p-type 1–2Ω cm CZ single crystalline silicon substrates. Although our cell structure is very simple - neither a BSF nor a surface texturing is used - a conversion efficiency of 13.1% has been achieved on an area of 1 cm². In this paper the technology is described and the dependence of the solar cell parameters on the properties of the n-type a-Si: H layer is discussed. It is shown that this cell type exhibits no degradation under light exposure.     

Effects of pre-strain applied at a polyethylene terephthalate substrate before the coating of TiO2 film on the coating film quality and optical performance

A mold was designed to create various strains in polyethylene terephthalate (PET) substrates before the deposition of TiO₂ film to simulate deposition process on a cylindrical drum. The residual stress of the PET substrate with TiO₂ film significantly increased with increasing strain, decreasing the radius of curvature. Compared to the as-received PET substrate, there was a noticeable increase in the surface roughness in the PET/TiO₂ specimens when a large strain was applied. The formation of voids or cavities in the TiO₂ layer significantly increased the roughness of the specimen. The mean cavity size and depth increased with increasing strain. For strains ≦ 4%, the specimen's hardness and Young's modulus factored by the voids/cavities increased with increasing surface roughness. The optical absorption increased with increasing surface roughness before becoming asymptotic to a constant value. The strain applied to the PET substrate before TiO₂ deposition greatly affects the optical reflection, transmittance, and absorption.     

Fabrication of organic thin film transistors on Polyethylene Terephthalate (PET) fabric substrates

In this paper organic thin film transistors (OTFTs) are directly fabricated on fabric substrates consisting of Polyethylene Terephthalate (PET) fibers. A key process is coating the polymer layers on the fabric in order to reduce the large surface roughness of the fabric substrate. Two polymers, i.e. polyurethane (PU) and photo-acryl (PA), are used to reduce the large surface roughness and simultaneously improve the process compatibility of the layers with the subsequent OTFTs processes while also retaining the original flexibility of the fabric. The surface roughness of the PU/PA-coated fabric is significantly reduced to 0.3 μm. Furthermore, the original flexibility of the PET fabric remained after coating of the PU/PA polymer layers. The mobility of the OTFTs fabricated on the PU-PA coated fabric substrate is 0.05 ± 0.02 cm²/V s when three PA layers and 90 nm thick pentacene layer were used. The performance does not vary even after 30,000 bending test.     

Filling of light emitting diode via-holes by MOCVD

The growth of epitaxial films on featured substrates has an important device application in junction-confinement, double hetero-structure light emitting diodes. These devices are presently grown by a liquid phase epitaxy process but growth by metalorganic chemical vapor deposition is desirable because of MOCVD's superior surface quality, uniformity, and throughput. This paper describes the effect of growth parameters on AlGaAs films deposited by atmospheric-pressure MOCVD into substrate holes typically made in the fabrication of junction-confinement LEDs. MOCVD growth replicates the substrate features; it does not give a planar surface over the holes. The behavior of epitaxy filling into holes is strongly dependent on growth temperature and total gas flow and largely independent of substrate misorientation and the thickness of the layer grown. Wet-etched holes formed (ll0)-oriented V-groove and dovetail-groove features on the hole circumference. Faceting of the MOCVD growth was seen on the wall with the (111)A feature while smooth growth was seen on the etched (111)B surface. Deceased.     

Yield Strengths of Biaxially Textured Metallic Substrates (Ni and its Alloys) Determined Using a Simplified Test Method

A simple testing method is used to compare the yield strengths (YS) of biaxially textured metallic substrates (Ni and its alloys) presently under development for YBa₂Cu₃O_7−x coated conductors. This method is based on a retired ASTM D3379 tensile test standard method that was originally recommended for single filament materials. Several common textured substrates, such as Ni, Ni-3at.%W, and Ni-5at.%W, procured from different manufacturers, were tested using this method, and the data were compared with the values reported in the literature. A new alloy substrate (constantan (Cu55-Ni44-Mn1wt.%)) that is biaxially textured in-house was also tested using this method, and the YS data were compared with those of other substrates. For the substrates used in this study, the data obtained using this method indicated that Ni substrates have YS of ∼52 MPa, Ni-3at.%W substrates have YS of ∼106 MPa, Ni-5at.%W substrates have YS 163 MPa, and Cu55-Ni44-Mn1 wt.% substrates have YS of 74 MPa.     

氧化铝陶瓷基板过孔的新型激光打孔工艺

陶瓷基板激光打孔一固有缺点即孔周围会形成大量不规则堆溅物。提出一种直接在凝胶注模成型陶瓷素坯上激光打孔的新工艺。Nd:YAG激光在氧化铝上打孔的研究表明,该方法能大大减少堆溅物的形成,从而得到分布致密、形状规则的微孔。     

Footprint study of ultrasonic wedge-bonding with aluminum wire on copper substrate

The effects of the process parameters of ultrasonic power and normal bonding force on bond formation at ambient temperatures have been investigated with scanning electron microscopy (SEM) and energy-dispersive x-ray (EDX) analysis. A model was developed based on classical microslip theory¹ to explain the general phenomena observed in the evolution of bond footprints left on the substrate. Modifications to the model are made due to the inherent differences in geometry between ball-bonding and wedge-bonding. Classical microslip theory describes circular contacts undergoing elastic deformation. It is shown in this work that a similar microslip phenomenon occurs for elliptical wire-to-flat contacts with plastically deformed wire. It is shown that relative motion exists at the bonding interface as peripheral microslip at lower powers, transitioning into gross sliding at higher powers. With increased normal bonding forces, the transition point into gross sliding occurs at higher ultrasonic bonding powers. These results indicate that the bonding mechanisms in aluminum wire wedge-bonding are very similar to those of gold ball-bonding, both on copper substrate. In ultrasonic wedge-bonding onto copper substrates, the ultrasonic energy is essential in forming bonding by creating relative interfacial motion, which removes the surface oxides.