光可变衰减器的研究进展

光可变衰减器(VOA)作为波分复用(WDM)网络中关键的功率管理器件,能够实现信道均衡和自动增益控制功能.微电机械系统(MEMS)型和热光型VOA以其衰减范围宽、功耗低、体积小、易于集成等优点成为研究重点,热光特性极佳的聚合物材料则成为最引人注目的热光材料.文章对已有的VOA器件作了概括分类,介绍了各种MEMS型VOA,还从热光材料的角度,总结了聚合物材料的研究成果,对已见报道的基于聚合物的各种热光型VOA进行了重点的描述和分析.最后给出了VOA的两种网络实例.     

稳定水声通信判决反馈盲均衡算法研究

水声信道环境恶劣,尤其是多径效应常会造成水声通信系统同步位置发生偏移,对均衡算法造成严重影响。从提高均衡算法稳健性的角度出发。在稳定性较高的归一化常数模算法基础上,借助早迟积分比相原理完成对采样位置的跟踪,并结合判决正方形方法提出一种归一化修正常模盲均衡算法。仿真结果表明．这种基于判决正方形的归一化修正常模盲均衡算法具有更好的收敛能力与稳定性,具有较强的抗干扰能力,能保证水声通信高效运行。     

掺杂元素对Ni-Mn-Ga合金结构与性能的影响

Ni-Mn-Ga合金是一种新型的智能材料,兼具铁磁性和形状记忆效应的双重优点,以对磁场的快速响应和大的宏观可恢复应变的特点有望成为传感器和驱动器的候选材料.通过掺入金属元素可以弥补该合金马氏体相变温度低,脆性大的不足.综述了掺杂元素对合金结构、相变温度、力学性能、形状记忆效应的影响,并提出了需要深入研究的问题.     

Nanostructures for chemical recognition using ISFET sensors

The application of Langmuir-Blodgett (LB)-fabricated nanostructures on Ion selective Field Effect Transistors (ISFET) is of great interest since it permits the combination of a micro-scale device with a nanoscale material. In this article, the optimization of a LB-monolayer for calcium and sodium detection is carried out by characterization with XPS and AFM techniques, followed by electrochemical characterisation onto ISFET sensors. Physico-chemical modifications of the surface and good cation complexation of the ionophores fixed in the monolayers were observed with XPS studies. AFM images showed the presence of a unhomogeneous layer all over the ISFET surface. The electrochemical response of those monolayers onto ISFETs demonstrated the feasibility of this technology for sensor membrane fabrication and it opens further studies for other kind of devices such as optochemical sensors.     

全光纤多普勒测速系统的研究

为了验证全光纤多普勒测速系统的低速响应能力,采用窄带光纤激光器、准直透镜等器件搭建了一套迈克尔逊干涉仪结构的全光纤多普勒测速系统,分析了其测速的基本原理,并对喇叭振动进行了测试。采用快速傅里叶变换对信号进行处理,解调结果表明,该系统对低速响应灵敏,能够有效地测量出喇叭膜片振动速度,最低可测速度在1mm/s以下,速度分辨率可达0.1mm/s。     

A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature

A sub-circuit SPICE model of a MOSFET for low temperature operation is presented.Two resistors are introduced for the freeze-out effect,and the explicit behavioral models are developed for them.The model can be used in a wide temperature range covering both cryogenic temperature and regular temperatures.     

Cellulose‐Based Ionogels for Paper Electronics

A new class of biofriendly ionogels produced by gelation of microcellulose thin films with tailored 1‐ethyl‐3‐methylimidazolium methylphosphonate ionic liquids are demonstrated. The cellulose ionogels show promising properties for application in flexible electronics, such as transparency, flexibility, transferability, and high specific capacitances of 5 to 15 μF cm^?2. They can be laminated onto any substrate such as multilayer‐coated paper and act as high capacitance dielectrics for inorganic (spray‐coated ZnO and colloidal ZnO nanorods) and organic (poly[3‐hexylthiophene], P3HT) electrolyte‐gated field‐effect transistors (FETs), that operate at very low voltages (<2 V). Field‐effect mobilities in ionogel‐gated spray‐coated ZnO FETs reach 75 cm² V^?1 s^?1 and a typical increase of mobility with decreasing specific capacitance of the ionogel is observed. Solution‐processed, colloidal ZnO nanorods and laminated cellulose ionogels enable the fabrication of the first electrolyte‐gated, flexible circuits on paper, which operate at bending radii down to 1.1 mm.     

用光电导天线产生太赫兹电磁波的饱和效应研究

根据半导体光电子学理论,分析了光注入非平衡载流子(电子-空穴对)的瞬态输运机理,研究了不同条件下的SI-GaAs光电导偶极天线太赫兹波辐射功率和辐射强度的饱和效应.结果表明其主要原因是在外加偏置电场作用下,光注入载流子出现了空间电荷电场屏蔽和辐射电场屏蔽现象,对提高太赫兹波辐射功率和辐射强度起到了遏制作用.对于电极间隙大小不同的天线,两种屏蔽效应的作用不同;在触发光能一定的情况下,照射光斑较大时屏蔽效应较小.     

A complete small-signal HBT model including AC current crowding effect

An improved small-signal equivalent circuit of HBT concerning the AC current crowding effect is proposed in this paper.AC current crowding effect is modeled as a parallel RC circuit composed of Cbi and Rbi,with distributed base-collector junction capacitance also taken into account.The intrinsic portion is taken as a whole and extracted directly from the measured S-parameters in the whole frequency range of operation without any special test structures.An HBT device with a 2 × 20 μm2 emitter-area under three different biases were used to demonstrate the extraction and verify the accuracy of the equivalent circuit.     

晶向对InGaP/GaAs HBT性能的影响

在对In Ga P/ Ga As HBT特性的研究中发现,发射极长边与主对准边垂直([0 1 1 ]方向)和平行([0 1 1 ]方向)放置时,其直流电流增益和截止频率是不同的.[0 1 1 ]方向的直流电流增益远远大于[0 1 1 ]方向,而它的截止频率则略小于[0 1 1 ]方向.文献中认为电流增益的不同是压电效应产生的,但这种观点并不能很好地解释截止频率的晶向依赖性.文中用压电效应和两个互相垂直方向上发射区侧向腐蚀形状的不同很好地解释了所有实验结果