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11.
The preparation of homogenous, large area thin layers of tellurium on thin polyethylene foils is described. The tellurium was formed by room temperature decomposition of electrochemically generated H2Te. Pre-treatment of the polyethylene substrates with KMnO4 to give a Mn-oxide layer was found to improve the Te adhesion and homogeneity. Optical characterization of the layers was performed using UV/VIS/NIR spectroscopy. Such coatings have favorable characteristics for use as solar radiation shields in radiative cooling devices. The simplicity of generation of the very unstable H2Te was also exploited to demonstrate formation of size-quantized CdTe nanocrystals. 相似文献
12.
I. Visoly‐Fisher K.D. Dobson J. Nair E. Bezalel G. Hodes D. Cahen 《Advanced functional materials》2003,13(4):289-299
CdTe/CdS solar cells were subjected to heat stress at 200 °C in the dark under different environments (in N2 and in air), and under illumination (in N2). We postulate that two independent mechanisms can explain degradation phenomena in these cells: i) Excessive Cu doping of CdS: Accumulation of Cu in the CdS with stress, in the presence of Cl, will increase the photoconductivity of CdS. With limited amounts of Cu in CdS, this does NOT affect the photovoltaic behavior, but explains the crossover of light/dark current–voltage (J–V) curves. Overdoping of CdS with Cu can be detrimental to cell performance by creating deep acceptor states, acting as recombination centers, and compensating donor states. Under illumination, the barrier to Cu cations at the cell junction is reduced, and, therefore, Cu accumulation in the CdS is enhanced. Recovery of light‐stress induced degradation in CdTe/CdS cells in the dark is explained by dissociation of the acceptor defects. ii) Back contact barrier: Oxidation of the CdTe back surface in O2/H2O‐containing environment to form an insulating oxide results in a back‐contact barrier. This barrier is expressed by a rollover in the J–V curve. Humidity is an important factor in air‐induced degradation, as it accelerates the oxide formation. Heat treatment in the dark in inert atmosphere can stabilize the cells against certain causes of degradation, by completing the back contact anneal. 相似文献
13.
D. Johnstone T.D. Golding R. Hellmer J.H. Dinan M. Carmody 《Journal of Electronic Materials》2007,36(8):832-836
Reverse current in diodes can be dominated by generation processes, depending exponentially on temperature according to the
rate-limiting step in the generation process. In this report, the current-voltage-temperature (IVT) relationship is analyzed
for several midwave infrared and long-wave infrared (MWIR x = 0.295, LWIR x = 0.233) Hg1−x
Cd
x
Te (MCT) diodes. The energy varied from diode to diode. At high reverse biases, the energy tends toward the band gap energy.
Close to zero bias, the energy ranged from 0.06 to 0.1 eV. Deep level transient spectroscopy (DLTS) showed a broad peak centered
at 55–80 K for the MWIR MCT. Comparison of the DLTS spectrum to a simulation based on the energy and capture cross section
from a rate window analysis shows that the peak is a band of traps. The capacitance transient amplitude increased as the filling
pulse increased from 1 μs to 0.1 s, consistent with capture at a dislocation. A shift to lower temperatures for the peak was
also observed when the diodes are cooled under forward bias. The shift is reversible, indicating that the traps consist at
least partially of a bistable defect. 相似文献
14.
15.
碲镉汞红外探测器的表面钝化处理对器件暗电流有较大影响,决定了器件的探测性能。为了研究表面钝化层不同生长方式对暗电流的抑制效果,使用分子束外延(Molecular Beam Epitaxy, MBE)系统在Si基衬底上生长碲镉汞材料,分别通过磁控溅射和原位钝化方法生长CdTe/ZnS钝化膜层。采用半导体工艺在碲镉汞材料上制备了变面积光伏探测器。通过测试不同钝化膜层器件的暗电流,分析零偏电阻和面积乘积(R0A)与周长面积之比(p/A)的关系。结果表明,磁控溅射生长钝化层的Si基碲镉汞器件存在较大的隧穿电流,而原位钝化生长钝化层的Si基碲镉汞器件能更有效地抑制表面漏电流。拟合器件R0A因子随PN结面积的变化,得出原位生长钝化层的器件具有更好的钝化效果。变面积器件的制备和测试能够有效且直观地反映器件性能。 相似文献
16.
A. A. González-Ibarra F. Nava-Alonso A. Uribe-Salas 《Canadian Metallurgical Quarterly》2017,56(3):272-280
The extraction of precious metals from tellurides by cyanidation is more difficult than when they are in their native form, nevertheless the reason for their refractory nature has not been adequately supported. In this study, the mechanism of the cyanidation kinetics of silver telluride (Ag2Te) was investigated. For this purpose, cyanidation experiments were carried out to: (1) study the difference between the cyanidation kinetics of elemental silver and silver telluride; (2) study the effect of temperature (i.e. 20, 25, 27, 30, 35 and 40°C) on silver telluride dissolution; and (3) elucidate the kinetic mechanism of the silver telluride cyanidation. The results obtained showed that: (1) while 83.5% of elemental silver was dissolved in 8?h, only 13.2% of silver from silver telluride was dissolved in the same time; (2) temperature has an important effect on silver extraction from silver telluride, but a minor effect on tellurium dissolution; and (3) at temperatures between 20 and 27°C, the process was controlled by the chemical reaction with an apparent activation energy of 191.9?kJ?mol?1, whereas at temperatures between 30 and 40°C, the process was controlled by diffusion through a Ag5Te3 layer of products with an apparent activation energy of 25.2?kJ?mol?1. 相似文献
17.
Annabel R. Chew Jose J. Fonseca Oscar D. Dubon Alberto Salleo 《Advanced functional materials》2017,27(14)
Intercalated molecules can dramatically modify the electronic band structure of layered semiconductors, significantly altering the optical properties of the material. In the layered monochalcogenide Gallium Telluride (GaTe), exposure to air induces a nearly 1 eV reduction of its band gap due to the interlayer diffusion and chemisorption of oxygen. The effect of oxygen chemisorption at the Te‐terminated surfaces on the structure of GaTe, however, is much less known. To better understand the structure–property relationship of intercalated GaTe, a systematic, long‐term, X‐ray diffraction study has been performed on GaTe exfoliated crystals exposed to ambient conditions. It is observed that the structural changes are not limited to a previously observed short‐term increase in lattice expansion. Over the course of months and even years after exfoliation, the oxygen adsorbates continue to modify the structure of GaTe, inducing significant disorder and grain reorientation. It is estimated that approximately one out of every two grains is slightly displaced by the intercalating oxygen, demonstrating a significant increase in grain mosaicity, while still maintaining the original {?2 0 1} out‐of‐plane texture. Correlating these structural transformations to observed changes in electrical and optical properties will enable capitalization of the use of adsorbates to engineer novel properties in these layered materials. 相似文献
18.
I-Ta Hsieh 《Nanoscale and Microscale Thermophysical Engineering》2019,23(1):36-47
The thermal boundary resistances (TBRs) of twin boundaries occurring at three different atomic layers (Te1, Bi, and Te2) of bismuth telluride (Bi2Te3) are investigated in use of the non-equilibrium molecular dynamics (NEMD) simulation method. The simulation results show that among all, the Te1-twin boundaries bring about a lowest interfacial energy corresponding to a most stable system, which explains why this type of twin boundaries is mostly often observed in the laboratory; the Te2-twin boundaries on the other hand possess a largest interfacial energy, resulting in a least stable system. The order in magnitude of the TBRs associated with these three types of twin boundaries is Te2-twin > Bi-twin > Te1-twin. Moreover, the TBR associated with a pair of twin boundaries separated by a distance of 4 unit cell (UC) is found to be about twice as large as that of a single twin boundary of the same type. It implies that the mutual coupling, which causes an increase in TBRs, may be ignored and the effect of twin boundaries may be counted individually as long as the separation distance is larger than 4 UC. 相似文献
19.
Jason M. Kephart Russell M. Geisthardt W. S. Sampath 《Progress in Photovoltaics: Research and Applications》2015,23(11):1484-1492
A major source of loss in cadmium sulfide/cadmium telluride (CdS/CdTe) solar cells results from light absorbed in the CdS window layer, which is not converted to electrical current. This film can be made more transparent by oxygen incorporation during sputter deposition at ambient temperature. Prior to this work, this material has not produced high‐efficiency devices on tin oxide‐coated soda‐lime‐glass substrates used industrially. Numerous devices were fabricated over a variety of process conditions to produce an optimized device. Although the material does not show a consistent increase in band gap with oxygenation, absorption in this layer can be virtually eliminated over the relevant spectrum, leading to an increase in short‐circuit current. Meanwhile, fill factor is maintained, and open‐circuit voltage increases relative to baseline devices with sublimated CdS. The trend of device parameters with oxygenation and thickness is consistent with an increasing conduction band offset at the window/CdTe interface. Optimization considering both initial efficiency and stability resulted in a National Renewable Energy Laboratory verified 15.2%‐efficient cell on 3.2‐mm soda‐lime glass. This window material was shown to be compatible with SnO2‐based transparent conducting oxide and high resistance transparent coated substrates using in‐line compatible processes. Copyright © 2015 John Wiley & Sons, Ltd 相似文献
20.