半导体超晶格微制冷器的研究进展

对新型半导体器件——超晶格微制冷器进行了综述分析,对其理论、实验及与电子器件、光电子器件的集成等方面进行了介绍,并对其应用前景及领域进行了分析.     

含稀土氧化物难熔盐浸渍W基直热式阴极研究

为了提高磁控管阴极的工作性能, 采用新型La₂O₃/Y₂O₃-Gd₂O₃-ZrO₂难熔盐浸渍W基制备直热式阴极, 并对该阴极的热发射特性和寿命特性等进行了测试。热发射测试结果表明, La₂O₃-Gd₂O₃-ZrO₂浸渍阴极在1600℃可提供超过0.18 A/cm²的空间电荷限制区电流密度。在同等发射电流下, 该浸渍阴极的工作温度比纯W阴极降低至少300℃, 该阴极在1750℃, 0.5 A/cm²直流负载下, 可以连续工作2100 h。当以Y₂O₃代替La₂O₃, 采用相同的配比制备阴极时, 1400℃、1700℃下即可分别提供超过0.6、3.4 A/cm²的空间电荷限制区电流密度。Y₂O₃-Gd₂O₃-ZrO₂浸渍阴极的工作温度比La₂O₃-Gd₂O₃-ZrO₂浸渍阴极降低至少400℃, 该阴极在1600℃, 1.5 A/cm²直流负载下, 可以连续工作2600 h。最后, 对这两种新型含稀土氧化物难熔盐浸渍阴极的热发射机理进行了探讨。     

Heating graphene to incandescence and the measurement of its work function by the thermionic emission method

The work function （WF） of graphene is an essential parameter in graphene electronics. We have derived the WF of graphene by the thermionic emission method. Chemical vapor deposition （CVD）-grown single-layered polycrystalline graphene on copper foil is transferred to a cross-stacked carbon nanotube （CNT） film drawn from a super-aligned multiwalled CNT array. By decreasing the pore size of the CNT film, the as-prepared CNT-graphene film （CGF） can be Joule heated to a temperature as high as 1,800 K in vacuum without obvious destruction in the graphene structure. By studying the thermionic emission, we derive the WF of graphene, ranging from 4.7 to 4.8 eV with the average value being 4.74 eV. Because the substrate influence can be minimized by virtue of the porous nature of the CNT film and the influence of adsorbents can be excluded due to the high temperature during the thermionic emission, the measured WF of graphene can be regarded as intrinsic.     

La2O3-Mo热发射材料的研究

采用溶胶凝胶(Sol-Gel)和两步氢还原及烧结法成功制备了(2%～5%),质量分数,下同)La2O3-Mo阴极粉末和烧结体,借助于XRD,SEM等手段对材料成分及微观结构进行分析.结果显示在粉末和烧结体中稀土元素La以氧化物形式存在,La2O3粒子大小为100nm,弥散分布在烧结体基体中.热发射测试结果表明1400℃时,零场发射电流达到J0=6A/cm^2.暴露大气48h后,再经过1350℃激活,发射性能得到全面恢复.