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21.
Matthieu Fortin‐Deschênes Olga Waller Qi An Maureen J. Lagos Gianluigi A. Botton Hong Guo Oussama Moutanabbir 《Small (Weinheim an der Bergstrasse, Germany)》2020,16(3)
Alloying in group V 2D materials and heterostructures is an effective degree of freedom to tailor and enhance their physical properties. Up to date, black arsenic‐phosphorus is the only 2D group V alloy that has been experimentally achieved by exfoliation, leaving all other possible alloys in the realm of theoretical predictions. Herein, the existence of an additional alloy consisting of 2D antimony arsenide (2D‐AsxSb1?x) grown by molecular beam epitaxy on group IV semiconductor substrates and graphene is demonstrated. The atomic mixing of As and Sb in the lattice of the grown 2D layers is confirmed by low‐energy electron diffraction, Raman spectroscopy, and X‐ray photoelectron spectroscopy. The As content in 2D‐AsxSb1?x is shown to depend linearly on the As4/Sb4 deposition rate ratio and As concentrations up to 15 at% are reached. The grown 2D alloys are found to be stable in ambient conditions in a timescale of weeks but to oxidize after longer exposure to air. This study lays the groundwork for a better control of the growth and alloying of group V 2D materials, which is critical to study their basic physical properties and integrate them in novel applications. 相似文献
22.
Jiadong Yu Lai Wang Zhibiao Hao Yi Luo Changzheng Sun Jian Wang Yanjun Han Bing Xiong Hongtao Li 《Advanced materials (Deerfield Beach, Fla.)》2020,32(15):1903407
III-nitride semiconductors have attracted considerable attention in recent years owing to their excellent physical properties and wide applications in solid-state lighting, flat-panel displays, and solar energy and power electronics. Generally, GaN-based devices are heteroepitaxially grown on c-plane sapphire, Si (111), or 6H-SiC substrates. However, it is very difficult to release the GaN-based films from such single-crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet the ever-increasing demand for wearable and foldable applications. On the other hand, sp2-bonded two-dimensional (2D) materials, which exhibit hexagonal in-plane lattice arrangements and weakly bonded layers, can be transferred onto flexible substrates with ease. Hence, flexible III-nitride devices can be implemented through such 2D release layers. In this progress report, the recent advances in the different strategies for the growth of III-nitrides based on 2D materials are reviewed, with a focus on van der Waals epitaxy and transfer printing. Various attempts are presented and discussed herein, including the different kinds of 2D materials (graphene, hexagonal boron nitride, and transition metal dichalcogenides) used as release layers. Finally, current challenges and future perspectives regarding the development of flexible III-nitride devices are discussed. 相似文献
23.
Juan Lyu Jing Pei Yuzheng Guo Jian Gong Huanglong Li 《Advanced materials (Deerfield Beach, Fla.)》2020,32(2):1906000
The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep-slope field-effect-transistor (FET). In addition to the selection of source material with desired density of states–energy relation (D(E)), engineering the source:channel interface for gate-tunable channel-barrier is crucial to CS-FETs. However, conventional metal:semiconductor (MS) interfaces generally suffer from strong Fermi-level pinning due to the inevitable chemical disorder and defect-induced gap states, precluding the gate tunability of the barriers. By comprehensive materials and device modeling at the atomic scale, it is reported that 2D van der Waals (vdW) MS interfaces, with their atomic sharpness and cleanness, can be considered as general ingredients for CS-FETs. As test cases, InSe-based n-type FETs are studied. It is found that graphene can be spontaneously p-type doped along with slightly opened bandgap around the Dirac-point by interfacing with InSe, resulting in superexponentially decaying hot carrier density with increasing n-type channel-barrier. Moreover, the D(E) relations suggest that 2D transition-metal dichalcogenides and 2D transition-metal carbides are a rich library of CS materials. Graphene, Cd3C2, T-VTe2, H-VTe2, and H-TaTe2 CSs lead to subthreshold swing below 60 mV dec−1. This work broadens the application potentials of 2D vdW MS heterostructures and serves as a springboard for more studies on low-power electronics based on 2D materials. 相似文献
24.
Yuxuan Peng Xing Cheng Pingfan Gu Fanggui Wang Jie Yang Mingzhu Xue Wenyun Yang Changsheng Wang Shunquan Liu Kenji Watanabe Takashi Taniguchi Yu Ye Jinbo Yang 《Advanced functional materials》2020,30(34)
The recent realization of 2D magnetism in van der Waals (vdWs) magnets holds promise for future information technology. However, the vdWs semiconducting ferromagnets, which remain rare, are especially important in developing 2D magnetic devices with new functionalities due to the possibility of simultaneous control of the carrier charge and spin. Metal thiophosphate (MTP), a multifunctional vdWs material system that combines the sought‐after properties of complex oxides, is a promising vdWs magnet system. Here, single crystals of a novel vdWs ferromagnetic semiconductor MTP AgVP2Se6 with a room‐temperature resistivity of 1 Ω m are successfully synthesized. Due to the nature of vdWs bonding along the c‐axis, the magnetic properties of the few‐layer AgVP2Se6 with different thicknesses are characterized on the exfoliated samples. The AgVP2Se6 flakes exhibit significant thickness‐dependent magnetic properties, and a rectangular hysteresis loop with a large coercive field of 750 Oe at 2 K and an undiminished Curie temperature of 19 K are observed in the 6.7 nm AgVP2Se6 flake. The discovered vdWs ferromagnet AgVP2Se6 with semiconducting behavior will provide alternative platforms for exploring 2D magnetism and potential applications in spintronic devices. 相似文献
25.
Mengmeng Yang Qian Li Rajesh V. Chopdekar Camelia Stan Stefano Cabrini Jun Woo Choi Sheng Wang Tianye Wang Nan Gao Andreas Scholl Nobumichi Tamura Chanyong Hwang Feng Wang Ziqiang Qiu 《Advanced Quantum Technologies》2020,3(4)
Among many efforts in the research of van der Waals (vdW) magnetic materials, increasing the Curie temperature above room temperature has been at the center of research in developing spintronics technology using vdW materials. Here an effective and reliable method of increasing the Curie temperature of ferromagnetic Fe3GeTe2 vdW materials by Ga implantation is reported. It is found that implanting Ga into Fe3GeTe2 by the amount of 10−3 Ga Å−3 could greatly enhance the Fe3GeTe2 Curie temperature by almost 100%. Spatially resolved microdiffraction and element‐resolved X‐ray absorption spectroscopy show little changes in the Fe3GeTe2 crystal structure and Fe valence state. In addition, the Ga implantation changes the Fe3GeTe2 magnetization from out‐of‐plane direction at low temperature to in‐plane direction at high temperature. The result opens a new opportunity for tailoring the magnetic properties of vdW materials beyond room temperature. 相似文献
26.
Wenhao Huang Feng Wang Lei Yin Ruiqing Cheng Zhenxing Wang Marshet Getaye Sendeku Junjun Wang Ningning Li Yuyu Yao Jun He 《Advanced materials (Deerfield Beach, Fla.)》2020,32(14):1908040
Ferroelectric field-effect transistors (FeFETs) are one of the most interesting ferroelectric devices; however, they, usually suffer from low interface quality. The recently discovered 2D layered ferroelectric materials, combining with the advantages of van der Waals heterostructures (vdWHs), may be promising to fabricate high-quality FeFETs with atomically thin thickness. Here, dual-gated 2D ferroelectric vdWHs are constructed using MoS2, hexagonal boron nitride (h-BN), and CuInP2S6 (CIPS), which act as a high-performance nonvolatile memory and programmable rectifier. It is first noted that the insertion of h-BN and dual-gated coupling device configuration can significantly stabilize and effectively polarize ferroelectric CIPS. Through this design, the device shows a record-high performance with a large memory window, large on/off ratio (107), ultralow programming state current (10−13 A), and long-time endurance (104 s) as nonvolatile memory. As for programmable rectifier, a wide range of gate-tunable rectification behavior is observed. Moreover, the device exhibits a large rectification ratio (3 × 105) with stable retention under the programming state. This demonstrates the promising potential of ferroelectric vdWHs for new multifunctional ferroelectric devices. 相似文献
27.
Michele Serri Giuseppe Cucinotta Lorenzo Poggini Giulia Serrano Philippe Sainctavit Judyta Strychalska-Nowak Antonio Politano Francesco Bonaccorso Andrea Caneschi Robert J. Cava Roberta Sessoli Luca Ottaviano Tomasz Klimczuk Vittorio Pellegrini Matteo Mannini 《Advanced materials (Deerfield Beach, Fla.)》2020,32(24):2000566
Magnetic crystals formed by 2D layers interacting by weak van der Waals forces are currently a hot research topic. When these crystals are thinned to nanometric size, they can manifest strikingly different magnetic behavior compared to the bulk form. This can be the result of, for example, quantum electronic confinement effects, the presence of defects, or pinning of the crystallographic structure in metastable phases induced by the exfoliation process. In this work, an investigation of the magnetism of micromechanically cleaved CrCl3 flakes with thickness >10 nm is performed. These flakes are characterized by superconducting quantum interference device magnetometry, surface-sensitive X-ray magnetic circular dichroism, and spatially resolved magnetic force microscopy. The results highlight an enhancement of the CrCl3 antiferromagnetic interlayer interaction that appears to be independent of the flake size when the thickness is tens of nanometers. The estimated exchange field is 9 kOe, representing an increase of ≈900% compared to the one of the bulk crystals. This effect can be attributed to the pinning of the high-temperature monoclinic structure, as recently suggested by polarized Raman spectroscopy investigations in thin (8–35 nm) CrCl3 flakes. 相似文献
28.
Chao Wen Alexander G. Banshchikov Yury Y. Illarionov Werner Frammelsberger Theresia Knobloch Fei Hui Nikolai S. Sokolov Tibor Grasser Mario Lanza 《Advanced materials (Deerfield Beach, Fla.)》2020,32(34):2002525
Mechanically exfoliated 2D hexagonal boron nitride (h-BN) is currently the preferred dielectric material to interact with graphene and 2D transition metal dichalcogenides in nanoelectronic devices, as they form a clean van der Waals interface. However, h-BN has a low dielectric constant (≈3.9), which in ultrascaled devices results in high leakage current and premature dielectric breakdown. Furthermore, the synthesis of h-BN using scalable methods, such as chemical vapor deposition, requires very high temperatures (>900 °C) , and the resulting h-BN stacks contain abundant few-atoms-wide amorphous regions that decrease its homogeneity and dielectric strength. Here it is shown that ultrathin calcium fluoride (CaF2) ionic crystals could be an excellent solution to mitigate these problems. By applying >3000 ramped voltage stresses and several current maps at different locations of the samples via conductive atomic force microscopy, it is statistically demonstrated that ultrathin CaF2 shows much better dielectric performance (i.e., homogeneity, leakage current, and dielectric strength) than SiO2, TiO2, and h-BN. The main reason behind this behavior is that the cubic crystalline structure of CaF2 is continuous and free of defects over large regions, which prevents the formation of electrically weak spots. 相似文献
29.
Sanat Ghosh Jaykumar Vaidya Sawani Datta Ram Prakash Pandeya Digambar A. Jangade Ruta N. Kulkarni Kalobaran Maiti Arumugam Thamizhavel Mandar M. Deshmukh 《Advanced materials (Deerfield Beach, Fla.)》2020,32(37):2002220
High-temperature superconductors (HTSs) are important for potential applications and for understanding the origin of strong correlations. Bi2Sr2CaCu2O8+δ (BSCCO), a van der Waals material, offers a platform to probe the physics down to a unit-cell. Guiding the flow of electrons by patterning 2DEGS and oxide heterostructures has brought new functionality and access to new science. Similarly, modifying superconductivity in HTS locally, on a small length scale, is of immense interest for superconducting electronics. A route to modify superconductivity locally by depositing metal on the surface is reported here by transport studies on few unit-cell thick BSCCO. Deposition of chromium (Cr) on the surface over a selected area of BSCCO results in insulating behavior of the underlying region. Cr locally depletes oxygen in CuO2 planes and disrupts the superconductivity in the layers below. This technique of modifying superconductivity is suitable for making sub-micrometer superconducting wires and more complex superconducting devices. 相似文献
30.
Evan J. Telford Avalon H. Dismukes Kihong Lee Minghao Cheng Andrew Wieteska Amymarie K. Bartholomew Yu-Sheng Chen Xiaodong Xu Abhay N. Pasupathy Xiaoyang Zhu Cory R. Dean Xavier Roy 《Advanced materials (Deerfield Beach, Fla.)》2020,32(37):2003240
The recent discovery of magnetism within the family of exfoliatable van der Waals (vdW) compounds has attracted considerable interest in these materials for both fundamental research and technological applications. However, current vdW magnets are limited by their extreme sensitivity to air, low ordering temperatures, and poor charge transport properties. Here the magnetic and electronic properties of CrSBr are reported, an air-stable vdW antiferromagnetic semiconductor that readily cleaves perpendicular to the stacking axis. Below its Néel temperature, TN = 132 ± 1 K, CrSBr adopts an A-type antiferromagnetic structure with each individual layer ferromagnetically ordered internally and the layers coupled antiferromagnetically along the stacking direction. Scanning tunneling spectroscopy and photoluminescence (PL) reveal that the electronic gap is ΔE = 1.5 ± 0.2 eV with a corresponding PL peak centered at 1.25 ± 0.07 eV. Using magnetotransport measurements, strong coupling between magnetic order and transport properties in CrSBr is demonstrated, leading to a large negative magnetoresistance response that is unique among vdW materials. These findings establish CrSBr as a promising material platform for increasing the applicability of vdW magnets to the field of spin-based electronics. 相似文献