Controllable Magnetic Proximity Effect and Charge Transfer in 2D Semiconductor and Double-Layered Perovskite Manganese Oxide van der Waals Heterostructure

Optically generated excitonic states (excitons and trions) in transition metal dichalcogenides are highly sensitive to the electronic and magnetic properties of the materials underneath. Modulation and control of the excitonic states in a novel van der Waals (vdW) heterostructure of monolayer MoSe₂ on double-layered perovskite Mn oxide ((La_0.8Nd_0.2)_1.2Sr_1.8Mn₂O₇) is demonstrated, wherein the Mn oxide transforms from a paramagnetic insulator to a ferromagnetic metal. A discontinuous change in the exciton photoluminescence intensity via dielectric screening is observed. Further, a relatively high trion intensity is discovered due to the charge transfer from metallic Mn oxide under the Curie temperature. Moreover, the vdW heterostructures with an ultrathin h-BN spacer layer demonstrate enhanced valley splitting and polarization of excitonic states due to the proximity effect of the ferromagnetic spins of Mn oxide. The controllable h-BN thickness in vdW heterostructures reveals a several-nanometer-long scale of charge transfer as well as a magnetic proximity effect. The vdW heterostructure allows modulation and control of the excitonic states via dielectric screening, charge carriers, and magnetic spins.     

Van der Waals Heterostructures for High-Performance Device Applications: Challenges and Opportunities

The discovery of two-dimensional (2D) materials with unique electronic, superior optoelectronic, or intrinsic magnetic order has triggered worldwide interest in the fields of material science, condensed matter physics, and device physics. Vertically stacking 2D materials with distinct electronic and optical as well as magnetic properties enables the creation of a large variety of van der Waals heterostructures. The diverse properties of the vertical heterostructures open unprecedented opportunities for various kinds of device applications, e.g., vertical field-effect transistors, ultrasensitive infrared photodetectors, spin-filtering devices, and so on, which are inaccessible in conventional material heterostructures. Here, the current status of vertical heterostructure device applications in vertical transistors, infrared photodetectors, and spintronic memory/transistors is reviewed. The relevant challenges for achieving high-performance devices are presented. An outlook into the future development of vertical heterostructure devices with integrated electronic and optoelectronic as well as spintronic functionalities is also provided.     

Ferroelectric Control of Polarity of the Spin-polarized Current in Van Der Waals Multiferroic Heterostructures

Ferroelectric (FE) control of magnetism at nanoscale, for instance, FE control of the polarity of spin-polarized current is crucial for technological advances in magnetoelectric and spintronic applications. However, this fascinating functionality has not been reported in nanoscale systems yet. Herein, a new class of FE/A-type antiferromagnetic heterobilayer/FE van der Waals (vdW) multiferroic structures is found, in which the FE control of polarity of spin-polarized current is found possible. Take Sc₂CO₂/CrSiTe₃/CrGeTe₃/Sc₂CO₂ heterostructure as a successful example. First-principles calculations reveal that its polarity of half-metallicity can be switched by flipping the FE polarization orientation. Meanwhile, device transport simulation shows that its up/down spin current transmission ratio is as large as 0.1 × 10³ at $\overrightarrow{\mathrm{P}}\uparrow \uparrow$ Sc₂CO₂ configuration and is only 2.6 × 10⁻³ at $\overrightarrow{\mathrm{P}}\downarrow \downarrow$ Sc₂CO₂ configuration in the vdW multiferroic heterostructures. Essentially, it stems from the reversible FE switch of the internal electric field across the CrSiTe₃/CrGeTe₃ heterobilayer and the FE control of the interfacial effect between Sc₂CO₂ and Cr(Si/Ge)Te₃ layers. This work opens a direction for constructing low-energy-dissipation, non-volatile, and high-sensitive spintronic devices such as spin field-effect transistors.     

基于实验室重现噪声的高速列车车厢主动降噪实验研究

为降低高速列车运行时的车厢内低频噪声,研究了车厢内大范围区域的噪声主动控制问题.针对高速列车运行实测噪声频谱与目标降噪区域尺寸(1.8 m×2.5 m×1.3 m),设计48通道的前馈主动控制系统.按照比较匀称的排列方式,次级声源布放在车厢内除底部的其余5个面上,误差点分布在目标区域.通过测量各声学路径传递函数,离线计...     

Curating the Digital: An Interview with MoMA's Paola Antonelli

As Senior Curator in the Department of Architecture and Design at the Museum of Modern Art, New York, Paola Antonelli treats digital and analogue design with equal regard. Here she talks to Guest-Editor Neil Leach about some of her decisions. She discusses the distinctions between design, art and architecture; how she keeps a clear head amid the prevailing euphoria over new technologies, in order to choose only those pieces that also represent successful design; whom she views as paragons of design in the digital age; and why she believes that architectural education needs to be reinvented.     

DFT study on type-II photocatalyst for overall water splitting: g-GaN/C2N van der Waals heterostructure

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What Has Happened to Territory?

In the concluding article of the main section of this issue, Antoine Picon evokes the earlier meaning of territory for administrators, architects and engineers, as lands that were integrated into nations or colonies by the early modern European countries. Picon traces how 18th- and 19th-century perceptions of territory with an emphasis on administrative separation fed into an attitude of both distance and sensitivity to landscape, as exemplified by the Romantic movement in painting and literature; a heritage that continued into the 20th century in architecture with its emphasis on rationalisation. Copyright © 2010 John Wiley & Sons, Ltd.